VS-3EJU06-M3/6A

VS-3EJU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 3 A FRED Pt® FEATURES eSMP® Series • Ultrafast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Low forward voltage drop • Low leakage current Top View Bottom View • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SlimSMA (DO-221AC) Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode DESCRIPTION / APPLICATIONS State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time, and fast recovery. LINKS TO ADDITIONAL RESOURCES 3D 3D The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. 3D Models These devices are intended for use in snubber, output operation, inverters or as freewheeling diodes. PRIMARY CHARACTERISTICS IF(AV) 3A VR 600 V VF at IF 0.99 V trr 50 ns TJ max. 175 °C Package SlimSMA (DO-221AC) Circuit configuration Single The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 117 °C (1) 3 Non-repetitive peak surge current IFSM TJ = 25 °C 43 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 3 A - 1.15 1.35 IF = 3 A, TJ = 150 °C - 0.99 1.2 IR = 100 μA VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 100 VR = 600 V - 6.2 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 96067 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr Reverse recovery charge - - - 50 - 52 - UNITS ns - 82 - - 7.3 - - 10 - TJ = 25 °C - 210 - TJ = 125 °C - 400 - MIN. TYP. MAX. UNITS -55 - 175 °C TJ = 125 °C Qrr MAX. 45 IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 25 °C IRRM TYP. - TJ = 25 °C TJ = 125 °C Peak recovery current MIN. IF = 3 A dIF/dt = 500 A/μs VR = 400 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to mount RthJM Device mounted on PCB with 8 mm x 16 mm soldering lands - 16 - Thermal resistance, junction to ambient RthJA Device mounted on PCB with 3 mm x 3 mm soldering lands - 115 - °C/W Approximate Weight g oz. Case style SlimSMA (DO-221AC) 100 3U6 100 TJ = 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.03 0.0011 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = -40 °C 0.1 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96067 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06-M3 www.vishay.com Vishay Semiconductors 160 140 120 125 °C trr (ns) CT - Junction Capacitance (pF) 100 10 80 25 °C 60 40 1 20 0 100 200 300 400 500 100 600 1000 VR - Reverse Voltage (V) dIF/dt (A/µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Typical Reverse Recovery vs. dIF/dt 500 180 450 160 400 125 °C 350 140 Qrr (nC) Allowable Case Temperature (°C) 100 DC 120 Square wave (D = 0.50) 80 % rated VR applied 300 25 °C 250 200 100 150 See note (1) 100 80 0 1 2 3 4 5 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Stored Charge vs. dIF/dt 5 Average Power Loss (W) RMS limit 4 3 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristic Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 28-Jan-2021 Document Number: 96067 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06-M3 www.vishay.com Vishay Semiconductors ZthJA - Thermal Impedance Junction to Ambient (°C/W) 1000 100 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 t1 - Rectangular Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJA (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 28-Jan-2021 Document Number: 96067 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 3 E J U 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (3 = 3 A) 3 - Circuit configuration: E = single diode 4 - J = SlimSMA package 5 - Process type, U = ultrafast recovery 6 - Voltage code (06 = 600 V) 7 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-3EJU06-M3/6A 3500 3500 7" diameter plastic tape and reel VS-3EJU06-M3/6B 14 000 14 000 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95571 Part marking information www.vishay.com/doc?95562 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96589 Revision: 28-Jan-2021 Document Number: 96067 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-221AC (SlimSMA) DIMENSIONS in inches (millimeters) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.047 (1.20) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout 0.039 (1.00) 0.035 (0.90) 0.060 (1.52) MIN. 0.012 (0.30) 0.006 (0.15) 0.047 (1.20) MIN. 0.123 (3.12) MAX. 0.217 (5.52) REF. 0.047 (1.20) MIN. Revision: 21-Jul-14 Document Number: 95571 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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