VS-3EJU06HM3/6A

VS-3EJU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 3 A FRED Pt® FEATURES eSMP® Series • Ultrafast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Low forward voltage drop • Low leakage current Top View Bottom View • Meets MSL level 1, per LF maximum peak of 260 °C SlimSMA (DO-221AC) Cathode J-STD-020, • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time, and fast recovery. 3D 3D 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRIMARY CHARACTERISTICS IF(AV) 3A VR 600 V VF at IF 0.99 V trr 50 ns These devices are intended for use in snubber, output operation, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element TJ max. 175 °C Package SlimSMA (DO-221AC) Circuit configuration Single MECHANICAL DATA Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 117 °C (1) 3 Non-repetitive peak surge current IFSM TJ = 25 °C 43 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 3 A - 1.15 1.35 IF = 3 A, TJ = 150 °C - 0.99 1.2 IR = 100 μA VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 100 VR = 600 V - 6.2 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 96068 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 45 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 50 TJ = 25 °C - 52 - TJ = 125 °C Peak recovery current Reverse recovery charge - 82 - 7.3 - - 10 - TJ = 25 °C - 210 - TJ = 125 °C - 400 - MIN. TYP. MAX. UNITS -55 - 175 °C TJ = 125 °C Qrr ns - TJ = 25 °C IRRM UNITS IF = 3 A dIF/dt = 500 A/μs VR = 400 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to mount RthJM Device mounted on PCB with 8 mm x 16 mm soldering lands - 16 - Thermal resistance, junction to ambient RthJA Device mounted on PCB with 3 mm x 3 mm soldering lands - 115 - °C/W Approximate Weight g oz. Case style SlimSMA (DO-221AC) 100 3U6 100 TJ = 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.032 0.0011 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = -40 °C 0.1 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96068 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06HM3 www.vishay.com Vishay Semiconductors 5 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 3 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 2 1 0 1 0 100 200 300 400 500 0 600 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 160 180 140 160 120 125 °C 140 trr (ns) Allowable Case Temperature (°C) 4 DC 120 100 80 25 °C Square wave (D = 0.50) 80 % rated VR applied 60 100 40 See note (1) 20 80 0 1 2 3 4 100 5 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. dIF/dt 500 450 400 125 °C Qrr (nC) 350 300 25 °C 250 200 150 100 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 28-Jan-2021 Document Number: 96068 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06HM3 www.vishay.com Vishay Semiconductors ZthJA - Thermal Impedance Junction to Ambient (°C/W) 1000 100 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 t1 - Rectangular Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJA (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 28-Jan-2021 Document Number: 96068 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJU06HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 3 E J U 06 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (3 = 3 A) 3 - Circuit configuration: E = single diode 4 - J = SlimSMA package 5 - Process type, U = ultrafast recovery 6 - Voltage code (06 = 600 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-3EJU06HM3/6A 3500 3500 7" diameter plastic tape and reel VS-3EJU06HM3/6B 14 000 14 000 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95571 Part marking information www.vishay.com/doc?95562 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96589 Revision: 28-Jan-2021 Document Number: 96068 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-221AC (SlimSMA) DIMENSIONS in inches (millimeters) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.047 (1.20) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout 0.039 (1.00) 0.035 (0.90) 0.060 (1.52) MIN. 0.012 (0.30) 0.006 (0.15) 0.047 (1.20) MIN. 0.123 (3.12) MAX. 0.217 (5.52) REF. 0.047 (1.20) MIN. Revision: 21-Jul-14 Document Number: 95571 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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