VS-3EYH02-M3/H

VS-3EYH01-M3, VS-3EYH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt® FEATURES eSMP® Series • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C Top View Bottom View J-STD-020, • Class 2 whisker test SlimSMAW (DO-221AD) • Compatible to SOD-128 package case outline • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS 3D Models For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial, and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 3A VR 100 V, 200 V VF at IF 0.71 V Case: SlimSMAW Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant IFSM 70 A trr (typ.) 16 ns TJ max. 175 °C Package SlimSMAW (DO-221AD) Circuit configuration Single Terminals: J-STD-002 matte tin plated leads, solderable per Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage SYMBOL VS-3EYH01-M3 VS-3EYH02-M3 VALUES IF(AV) (1) Non-repetitive peak surge current IFSM UNITS 100 VRRM Average rectified forward current Operating junction and storage temperatures TEST CONDITIONS V 200 TC = 137 °C 3 TJ = 25 °C, 10 ms sine pulse wave 70 TJ, TStg A -55 to +175 °C Note (1) Mounted on infinite heatsink ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VS-3EYH01-M3 VBR, VR VS-3EYH02-M3 Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 100 - - 200 - - IF = 3 A - 0.86 0.95 0.79 IF = 3 A, TJ = 150 °C - 0.71 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - - 20 VR = 200 V - 16 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 96515 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EYH01-M3, VS-3EYH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 22 - IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 16 - IF = 0.5 A, IR = 1A, Irr = 0.25 A - - 30 TJ = 25 °C - 18 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr UNITS ns - 30 - - 2.5 - - 4 - TJ = 25 °C - 23 - TJ = 125 °C - 60 - MIN. TYP. MAX. UNITS -55 - 175 °C Infinite heatsink - 12 15 Device mounted on FR4 PCB, 2 oz. standard footprint - 120 150 IF = 3 A, dIF/dt = 200 A/μs, VR = 100 V TJ = 25 °C TJ = 125 °C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to mount RthJM (1) Thermal resistance, junction to ambient RthJA VS-3EYH01-M3 Marking device TEST CONDITIONS 3H1 Case style SlimSMAW (DO-221AD) VS-3EYH02-M3 °C/W 3H2 100 100 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM) 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 150 °C 1 125 °C 0.1 25 °C 0.01 0.001 TJ = -40 °C 0.1 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 50 100 150 200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96515 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EYH01-M3, VS-3EYH02-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 1 0 25 50 75 100 125 150 175 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1000 Junction to ambient 100 Junction to mount 10 1 0.1 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) 180 3.5 170 3 RMS limit Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 160 DC 150 140 Square wave (D = 0.50) rated VR applied 130 2.5 2 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1.5 1 0.5 See note (1) 120 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 28-Jan-2021 Document Number: 96515 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EYH01-M3, VS-3EYH02-M3 www.vishay.com Vishay Semiconductors 40 80 125 °C 70 35 60 Qrr (nC) trr (ns) 30 125 °C 25 40 25 °C 30 25 °C 20 50 20 15 10 10 0 100 200 300 400 500 100 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt ORDERING INFORMATION TABLE Device code VS- 3 E Y H 02 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (3 = 3 A) 3 - Circuit configuration: - M3 7 E = single diode 4 - Y = SlimSMAW (DO-221AD) 5 - Process type, 6 - Voltage code (02 = 200 V) 7 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE VS-3EYH01-M3/H 0.033 H 3500 7"diameter plastic tape and reel VS-3EYH01-M3/I 0.033 I 14 000 13"diameter plastic tape and reel VS-3EYH02-M3/H 0.033 H 3500 7"diameter plastic tape and reel VS-3EYH02-M3/I 0.033 I 14 000 13"diameter plastic tape and reel PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96582 Part marking information www.vishay.com/doc?95562 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96586 Revision: 28-Jan-2021 Document Number: 96515 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SlimSMAW (DO-221AD) DIMENSIONS in inches (millimeters) SlimSMAW (DO-221AD) Cathode band 0.106 (2.70) 0.091 (2.30) 0.075 (1.90) 0.063 (1.60) 0.032 (0.81) 0.014 (0.36) 0.158 (4.00) 0.142 (3.60) 0.024 (0.60) 0.012 (0.30) 0.197 (5.00) 0.173 (4.40) 0.043 (1.10) 0.035 (0.90) 0.009 (0.22) 0.004 (0.10) 0.083 (2.10) min. 0.055 (1.40) min. 0.118 (3.00) max. 0.055 (1.40) min. 0.228 (5.80) ref. Mounting pad layout Revision: 11-Dec-2018 Document Number: 96582 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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