VS-400U(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 400 A
FEATURES
• Wide current range
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC® types
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-9 (DO-205AB)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
IF(AV)
400 A
Package
DO-9 (DO-205AB)
Circuit configuration
Single
• Power supplies
• Machine tool controls
• High power drives
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IF(RMS)
IFSM
I2t
VRRM
VALUES
UNITS
400
A
120
°C
630
A
50 Hz
8250
60 Hz
8640
A
50 Hz
340
60 Hz
311
Range
800 to 1600
V
-40 to +200
°C
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-400U(R)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
80
800
900
120
1200
1300
160
1600
1700
15
Revision: 11-Jan-18
Document Number: 93510
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VS-400U(R) Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
TEST CONDITIONS
IF(AV)
180° conduction, half sine wave
IF(RMS)
DC at 110 °C case temperature
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
Maximum
I2t
for fusing
°C
630
A
100 % VRRM
reapplied
6940
8640
A
7270
340
311
241
100 % VRRM
reapplied
t = 8.3 ms
I2t
A
120
8250
Sinusoidal half wave,
initial TJ = TJ maximum
UNITS
400
No voltage
reapplied
No voltage
reapplied
t = 10 ms
VALUES
kA2s
220
t = 0.1 to 10 ms, no voltage reapplied
3400
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.77
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.85
kA2s
V
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.49
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.49
Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave
1.62
V
VALUES
UNITS
-40 to 200
°C
m
Maximum forward voltage drop
VFM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.15
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
K/W
Maximum allowed mounting torque
± 10 %
Not lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
27
N·m
250
g
DO-9 (DO-205AB)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.020
0.013
120°
0.023
0.023
90°
0.029
0.031
60°
0.042
0.044
30°
0.073
0.074
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93510
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-400U(R) Series
200
190
180
170
160
150
140
130
120
110
100
90
80
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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400U/R
Conduction Angle
180°
120°
60°
30°
0
90°
50 100 150 200 250 300 350 400 450
200
400U/R
190
180
Conduction Period
170
160
150
140
DC
130
180°
120
30°
90°
120°
110
0
100
Average Forward Current (A)
200
300
400
500
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
550
RMS Limit
R
elta
-D
350
300
K/
W
0.3
K/
W
0.4
K/W
/W
4K
0.0
400
0.
2
=
SA
Rth
450
W
K/
180°
120°
90°
60°
30°
500
1
0.
Maximum Average Forward Power Loss (W)
60°
0.6
K/W
250
200
150
Conduction Angle
1 K/
W
1.8 K/W
100
50
400U/R
0
50 100 150 200 250 300 350 400 450
10 30 50 70 90 110 130 150 170 190
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
800
0.2
K/
W
400
300
RMS Limit
Conduction Period
200
100
0
50
400U/R
150
250
350
450
0.3
K/W
0.4
K/W
0.6
K/W
1 K/W
aR
elt
-D
500
0.1
K/
W
/W
4K
0.0
600
=
DC
180°
120°
90°
60°
30°
700
A
hS
Rt
Maximum Average Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
1.8 K/W
550
Average Forward Current (A)
650
10 30 50 70 90 110 130 150 170 190
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93510
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-400U(R) Series
8000
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 190°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
7000
6000
5000
4000
3000
400U/R
2000
1
10
9000
8000
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 190°C
No Voltage Reapplied
Rated Vrrm Reapplied
6000
5000
4000
3000
2000
400U/R
1000
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
400U/R
1000
Tj = 25°C
Tj = 190°C
100
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Transient Thermal Impedance ZthJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value:
RthJC = 0.15 K/W
(DC Operation)
0.01
0.001
0.001
400U/R
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 11-Jan-18
Document Number: 93510
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-400U(R) Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
0
U
R
160
D
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
40 = essential part number
3
-
0 = standard recovery device
4
-
U = stud normal polarity (cathode to stud)
5
-
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
7
-
Diffused diode
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95339
Revision: 11-Jan-18
Document Number: 93510
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9) for 400U(R) Series
DIMENSIONS in millimeters (inches)
19 (0.75)
MAX.
Glass-metal seal
4 (0.
16) M
AX.
39 (1.53)
MAX.
9.5 (0.37)
MIN.
Ø 8.5 (0.33) NOM.
C.S. 35 mm²
(0.054 s.i.)
200 ± 10
(7.87 ± 0.39)
Ø 28.5 (1.08) MAX.
75 (2.95) MIN.
SW 32
16 (0.63)
MAX.
21 (0.82)
MAX.
3/4"-16UNF-2A (1)
Note
• For metric device: M16 x 1.5 contact factory
Document Number: 95339
Revision: 24-Jul-08
For technical questions, contact: indmodules@vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000