VS-40EPF04-M3

VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 40 A FEATURES Base cathode • Glass passivated pellet chip junction • 150 °C max. operating junction temperature 2 • Low forward voltage drop and short reverse recovery time 1 • Designed and qualified JEDEC®-JESD 47 3 TO-247AC 2L 1 Cathode 3 Anode according Available to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 40 A VR 200 V, 400 V, 600 V VF at IF 1.25 V IFSM 475 A trr 60 ns TJ max. 150 °C These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION Package TO-247AC 2L Circuit configuration Single Snap factor 0.5 The VS-40EPF006-M3 and VS-40APF006-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 40 A Sinusoidal waveform VRRM 200 to 600 V IFSM 475 A VF 10 A, TJ = 25 °C 1 V trr 1 A, - 100 A/μs 60 ns -40 to +150 °C IRRM AT 150 °C mA TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-40EPF02-M3 200 300 VS-40EPF04-M3 400 500 VS-40EPF06-M3 600 700 8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 40 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t 10 ms sine pulse, rated VRRM applied 400 10 ms sine pulse, no voltage reapplied 475 10 ms sine pulse, rated VRRM applied 800 10 ms sine pulse, no voltage reapplied 1131 t = 0.1 ms to 10 ms, no voltage reapplied 11 310 UNITS A A2s A2√s Revision: 29-Nov-2019 Document Number: 94102 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 40 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C UNITS 1.25 V 4.4 mΩ 1.1 V 0.1 VR = Rated VRRM TJ = 150 °C VALUES mA 8.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 40 Apk 25 A/μs 25 °C S VALUES UNITS 180 ns 3.2 A 0.5 μC IFM trr t dir dt 0.5 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation UNITS -40 to +150 °C 0.6 40 Mounting surface, smooth and greased °C/W 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES 40EPF02 Marking device Case style TO-247AC 2L 40EPF04 40EPF06 Revision: 29-Nov-2019 Document Number: 94102 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors 80 40EPF.. Series RthJC (DC) = 0.6 K/W 140 130 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Ø Conduction angle 120 110 120° 60° 100 30° 90° 180° 0 5 15 10 20 25 35 30 40 DC 50 RMS limit 40 30 Ø 20 Conduction period 10 40EPF.. Series TJ = 150 °C 0 45 10 20 30 40 50 60 70 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 450 40EPF.. Series RthJC (DC) = 0.6 K/W 140 130 Ø Conduction period 120 30° 110 90° 100 60° At any rated load condition and with rated VRRM applied following surge. 400 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 60 0 90 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 350 300 250 200 150 120° 40EPF.. Series DC 180° 100 90 0 10 20 40 30 50 60 70 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 60 500 180° 120° 90° 60° 30° 50 40 450 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° 70 RMS limit 30 20 Ø Conduction angle 10 40EPF.. Series TJ = 150 °C 5 10 15 20 25 30 35 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 40EPF.. Series 0 0 Maximum non-repetitive surge current versus pulse train duration. 40 100 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2019 Document Number: 94102 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors Instantaneous Forward Current (A) 1000 100 TJ = 25 °C TJ = 150 °C 10 40EPF.. Series 1 1 0 2 3 4 6 5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 4 225 IFM = 80 A 40EPF.. Series TJ = 25 °C Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (ns) 200 IFM = 40 A 175 150 IFM = 20 A IFM = 10 A 125 100 IFM = 5 A 75 40EPF.. Series TJ = 25 °C 50 IFM = 40 A 2 IFM = 20 A IFM = 10 A 1 IFM = 5 A IFM = 1 A 25 IFM = 1 A 0 0 40 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 10 0.8 40EPF.. Series TJ = 150 °C 0.6 Qrr - Typical Reverse Recovery Charge (µC) IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 40EPF.. Series TJ = 150 °C trr - Typical Reverse Recovery Time (ns) IFM = 80 A 3 0.4 0.2 IFM = 80 A 8 6 IFM = 40 A 4 IFM = 20 A IFM = 10 A 2 IFM = 5 A IFM = 1 A 0 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 29-Nov-2019 Document Number: 94102 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors 50 40EPF.. Series TJ = 150 °C 40EPF.. Series TJ = 25 °C 20 Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 25 IFM = 80 A IFM = 40 A 15 IFM = 20 A IFM = 10 A 10 IFM = 5 A 5 IFM = 1 A 0 IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 30 20 10 0 40 0 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C ZthJC - Transient Thermal Impedance (K/W) 40 Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 40EPF.. Series Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 94102 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 E P F 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: E = single diode 4 - Package: P = TO-247AC 2L 5 - Type of silicon: F = fast diode 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 02 = 200 V 04 = 400 V 06 = 600 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40EPF02-M3 25 500 Antistatic plastic tubes VS-40EPF04-M3 25 500 Antistatic plastic tubes VS-40EPF06-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96144 Part marking information www.vishay.com/doc?95648 SPICE model www.vishay.com/doc?95274 Revision: 29-Nov-2019 Document Number: 94102 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-40EPF06PBF VS-40EPF04PBF VS-40EPF02PBF VS-40EPF02-M3 VS-40EPF06-M3