VS-40EPF10-M3

VS-40EPF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 40 A FEATURES Base cathode • Glass passivated pellet chip junction • 150 °C max. operating junction temperature 2 • Low forward voltage drop and short reverse recovery time 1 • Designed and qualified JEDEC®-JESD 47 3 TO-247AC 2L 1 Cathode 3 Anode according Available to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 40 A VR 1000 V, 1200 V VF at IF 1.4 V IFSM 475 A trr 95 ns TJ max. 150 °C These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION Package TO-247AC 2L Circuit configuration Single Snap factor 0.5 The VS-45EPF12L-M3, VS-45APF12L-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 1000/1200 V Sinusoidal waveform 40 IFSM A 475 trr 1 A, 100 A/μs VF 20 A, TJ = 25 °C TJ 95 ns 1.25 V -40 to +150 °C IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-40EPF10-M3 1000 1100 VS-40EPF12-M3 1200 1300 10 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 105 °C, 180° conduction half sine wave 40 10 ms sine pulse, rated VRRM applied 400 IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t VALUES 10 ms sine pulse, no voltage reapplied 475 10 ms sine pulse, rated VRRM applied 800 10 ms sine pulse, no voltage reapplied 1131 t = 0.1 ms to 10 ms, no voltage reapplied 11 310 UNITS A A2s A2√s Revision: 29-Nov-2019 Document Number: 94103 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF1.-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 40 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C UNITS 1.4 V 6.82 mΩ 0.94 V 0.1 VR = Rated VRRM TJ = 150 °C VALUES mA 10 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 10 Apk 25 A/μs 25 °C S VALUES UNITS 450 ns 6 A 1.8 μC IFM trr t dir dt 0.5 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.6 °C/W 40 Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (Ibf · in) Approximate weight Mounting torque VALUES Case style TO-247AC 2L 40EPF10 40EPF12 Revision: 29-Nov-2019 Document Number: 94103 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF1.-M3 Series www.vishay.com Vishay Semiconductors 90 40EPF.. Series RthJC (DC) = 0.6 °C/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 130 120 110 30° 100 60° 90 90° 180° 80 120° Ø 70 Conduction angle 60 DC 180° 120° 90° 60° 30° 80 70 60 50 40 RMS limit Ø 30 Conduction period 20 40EPF.. Series TJ = 150 °C 10 0 0 5 10 15 20 25 30 35 40 0 45 10 Fig. 1 - Current Rating Characteristics 40 50 60 70 450 40EPF.. Series RthJC (DC) = 0.6 °C/W 140 130 120 Ø Conduction period 110 100 60° 30° 90 DC 90° 180° 80 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 30 Fig. 4 - Forward Power Loss Characteristics 150 120° 400 At any rated load condition and with rated VRRM applied following surge. 350 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 250 200 40EPF.. Series 150 70 60 100 0 10 20 30 40 50 60 1 70 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 70 500 50 180° 120° 90° 60° 30° 40 RMS limit 60 450 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 20 Average Forward Current (A) Average Forward Current (A) 30 Ø Conduction angle 20 40EPF.. Series TJ = 150 °C 10 0 5 10 15 20 25 30 35 40 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics 45 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 0 Maximum non-repetitive surge current versus pulse train duration. 100 0.01 40EPF.. Series 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2019 Document Number: 94103 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF1.-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 40EPF.. Series 1 0 1 2 3 4 5 6 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 6 0.7 trr - Typical Reverse Recovery Time (µs) 0.6 Qrr - Typical Reverse Recovery Charge (µC) 40EPF.. Series TJ = 25 °C 0.5 0.4 IFM = 40 A 0.3 IFM = 30 A IFM = 10 A 0.2 IFM = 5 A 0.1 40EPF.. Series TJ = 25 °C 5 IFM = 40 A 4 IFM = 30 A 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 0 200 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 2.0 20 40EPF.. Series TJ = 150 °C 1.6 Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) 40 IFM = 60 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 1.2 0.8 0.4 40EPF.. Series TJ = 150 °C 16 IFM = 60 A IFM = 40 A 12 IFM = 20 A 8 IFM = 10 A IFM = 5 A 4 IFM = 1 A 0 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 29-Nov-2019 Document Number: 94103 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF1.-M3 Series www.vishay.com Vishay Semiconductors 30 50 40EPF.. Series TJ = 25 °C IFM = 40 A IFM = 30 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 40EPF.. Series TJ = 150 °C 40 Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 25 IFM = 60 A IFM = 40 A 30 IFM = 20 A IFM = 10 A 20 IFM = 5 A 10 IFM = 1 A 0 0 0 40 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C ZthJC - Transient Thermal Impedance (°C/W) 40 Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 40EPF.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 94103 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40EPF1.-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 E P F 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: E = single diode 4 - Package: 5 - Type of silicon: P = TO-247AC 2L F = fast recovery 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 10 = 1000 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40EPF10-M3 25 500 Antistatic plastic tubes VS-40EPF12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96144 Part marking information www.vishay.com/doc?95648 Revision: 29-Nov-2019 Document Number: 94103 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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