VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 40 A
FEATURES
Base
cathode
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
2
• Low forward voltage drop and short reverse
recovery time
2
3
1
1
Cathode
TO-247AC modified
• Designed and qualified
JEDEC®-JESD 47
3
Anode
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Available
APPLICATIONS
Package
TO-247AC modified (2 pins)
IF(AV)
40 A
VR
1000 V, 1200 V
VF at IF
1.4 V
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
IFSM
475 A
DESCRIPTION
trr
95 ns
TJ max.
150 °C
Diode variation
Single die
The VS-40EPF1... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
Snap factor
0.5
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
VALUES
UNITS
1000/1200
V
Sinusoidal waveform
40
IFSM
A
475
trr
1 A, 100 A/μs
VF
20 A, TJ = 25 °C
95
ns
1.25
V
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-40EPF10PbF, VS-40EPF10-M3
1000
1100
VS-40EPF12PbF, VS-40EPF12-M3
1200
1300
TJ
VOLTAGE RATINGS
PART NUMBER
10
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
40
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine pulse, rated VRRM applied
400
10 ms sine pulse, no voltage reapplied
475
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
800
10 ms sine pulse, no voltage reapplied
1131
t = 0.1 ms to 10 ms, no voltage reapplied
11 310
UNITS
A
A2s
A2s
Revision: 11-Feb-16
Document Number: 94103
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VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
40 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
UNITS
1.4
V
6.82
m
0.94
V
0.1
VR = Rated VRRM
TJ = 150 °C
VALUES
mA
10
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
TEST CONDITIONS
IF at 10 Apk
25 A/μs
25 °C
S
VALUES
UNITS
450
ns
6
A
1.8
μC
IFM
trr
t
dir
dt
0.5
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to +150
°C
0.6
°C/W
40
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
0.2
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(Ibf · in)
Case style TO-247AC modified (JEDEC)
40EPF10
40EPF12
Revision: 11-Feb-16
Document Number: 94103
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VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
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Vishay Semiconductors
90
40EPF.. Series
RthJC (DC) = 0.6 °C/W
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
130
120
110
30°
100
60°
90
90°
180°
80
120°
Ø
70
Conduction angle
60
DC
180°
120°
90°
60°
30°
80
70
60
50
40
RMS limit
Ø
30
Conduction period
20
40EPF.. Series
TJ = 150 °C
10
0
0
5
15
10
20
25
30
35
40
0
45
10
Fig. 1 - Current Rating Characteristics
40
50
60
70
Fig. 4 - Forward Power Loss Characteristics
150
450
40EPF.. Series
RthJC (DC) = 0.6 °C/W
140
130
120
Ø
Conduction period
110
100
60°
30°
90
DC
90°
180°
80
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
30
Average Forward Current (A)
Average Forward Current (A)
120°
400
At any rated load condition and with
rated VRRM applied following surge.
350
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
300
250
200
40EPF.. Series
150
70
60
100
0
10
20
30
40
50
60
1
70
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
70
500
50
180°
120°
90°
60°
30°
40
RMS limit
60
450
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
20
30
Ø
Conduction angle
20
40EPF.. Series
TJ = 150 °C
10
0
5
10
15
20
25
30
35
40
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
45
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
0
Maximum non-repetitive surge current
versus pulse train duration.
100
0.01
40EPF.. Series
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94103
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VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
Instantaneous Forward Current (A)
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Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
40EPF.. Series
1
0
1
2
3
4
5
6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
6
0.7
trr - Typical Reverse
Recovery Time (µs)
0.6
Qrr - Typical Reverse
Recovery Charge (µC)
40EPF.. Series
TJ = 25 °C
0.5
0.4
IFM = 40 A
0.3
IFM = 30 A
IFM = 10 A
0.2
IFM = 5 A
0.1
40EPF.. Series
TJ = 25 °C
5
IFM = 40 A
4
IFM = 30 A
3
IFM = 10 A
2
IFM = 5 A
1
IFM = 1 A
IFM = 1 A
0
0
0
40
80
120
160
0
200
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
2.0
20
40EPF.. Series
TJ = 150 °C
1.6
Qrr - Typical Reverse
Recovery Charge (µC)
trr - Typical Reverse
Recovery Time (µs)
40
IFM = 60 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
1.2
0.8
0.4
40EPF.. Series
TJ = 150 °C
16
IFM = 60 A
IFM = 40 A
12
IFM = 20 A
8
IFM = 10 A
IFM = 5 A
4
IFM = 1 A
0
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 11-Feb-16
Document Number: 94103
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VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
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Vishay Semiconductors
30
50
40EPF.. Series
TJ = 25 °C
IFM = 40 A
IFM = 30 A
20
IFM = 10 A
15
IFM = 5 A
10
IFM = 1 A
5
40EPF.. Series
TJ = 150 °C
40
Irr - Typical Reverse
Recovery Current (A)
Irr - Typical Reverse
Recovery Current (A)
25
IFM = 60 A
IFM = 40 A
30
IFM = 20 A
IFM = 10 A
20
IFM = 5 A
10
IFM = 1 A
0
0
0
40
80
120
160
200
0
dI/dt - Rate of Fall of Forward Current (A/µs)
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
ZthJC - Transient Thermal Impedance (°C/W)
40
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
40EPF.. Series
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 11-Feb-16
Document Number: 94103
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VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
E
P
F
12
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (40 = 40 A)
3
-
Circuit configuration:
E = single diode
4
-
Package:
P = TO-247AC modified
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit:
F = fast recovery
10 = 1000 V
12 = 1200 V
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40EPF10PbF
25
500
Antistatic plastic tubes
VS-40EPF10-M3
25
500
Antistatic plastic tubes
VS-40EPF12PbF
25
500
Antistatic plastic tubes
VS-40EPF12-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95541
TO-247AC modified PbF
www.vishay.com/doc?95255
TO-247AC modified -M3
www.vishay.com/doc?95442
Revision: 11-Feb-16
Document Number: 94103
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Plating
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
ØK
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c
Revision: 07-Apr-15
Document Number: 95223
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247 - 50 mils L/F modified
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
Ø P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
A1
b4
(b1, b3, b5)
Plating
View A - A
C
2x e
0.10 M C A M
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
ØK
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 21-Apr-15
Document Number: 95541
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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VS-40EPF12PBF VS-40EPF10PBF
