VS-40EPS..-M3 Series
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Vishay Semiconductors
High Voltage, Input Rectifier Diode, 40 A
FEATURES
Base
cathode
• Very low forward voltage drop
• 150 °C max. operating junction temperature
2
• Glass passivated pellet chip junction
1
• Designed and qualified
JEDEC®-JESD 47
3
TO-247AC 2L
1
Cathode
3
Anode
according
to
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
PRIMARY CHARACTERISTICS
IF(AV)
40 A
VR
800 V to 1200 V
VF at IF
1.1 V
DESCRIPTION
IFSM
475 A
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
TJ max.
150 °C
Package
TO-247AC 2L
Circuit configuration
Single
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VRRM
Range
IFSM
VF
40 A, TJ = 25 °C
TJ
VALUES
UNITS
40
A
800/1200
V
475
A
1.1
V
-40 to +150
°C
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VS-40EPS08-M3
800
900
VS-40EPS12-M3
1200
1300
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
TEST CONDITIONS
TC = 105 °C, 180° conduction half sine wave
VALUES
10 ms sine pulse, rated VRRM applied
400
10 ms sine pulse, no voltage reapplied
475
10 ms sine pulse, rated VRRM applied
800
10 ms sine pulse, no voltage reapplied
1131
t = 0.1 ms to 10 ms, no voltage reapplied
UNITS
40
11 310
A
A2s
A2√s
Revision: 27-Nov-2019
Document Number: 94343
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
VFM
Maximum forward voltage drop
rt
Forward slope resistance
VF(TO)
Threshold voltage
IRM
Maximum reverse leakage current
TEST CONDITIONS
VALUES
20 A, TJ = 25 °C
1.0
40 A, TJ = 25 °C
1.1
TJ = 150 °C
TJ = 25 °C
V
7.16
mΩ
0.74
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storrage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
VALUES
UNITS
-40 to +150
°C
DC operation
0.6
40
Mounting surface, flat, smooth, and greased
0.2
Approximate weight
Mounting torque
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Marking device
40EPS08
Case style TO-247AC 2L
150
Maximum Allowable Case
Temperture (°C)
140
135
130
Ø
Conduction angle
125
120
30°
115
60°
90°
120°
110
40EPS12
150
VS-40EPS.. Series
RthJC (DC) = 0.6 K/W
145
Maximum Allowable Case
Temperature (°C)
°C/W
180°
105
VS-40EPS.. Series
RthJC (DC) = 0.6 K/W
140
130
Ø
Conduction period
30°
120
60°
90°
120°
110
180°
100
DC
100
95
0
5
10
15
20
25
30
35
40
45
0
10
20
30
40
50
60
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
70
Revision: 27-Nov-2019
Document Number: 94343
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPS..-M3 Series
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Vishay Semiconductors
55
Instantaneous Forward Current (A)
Maximum Average Forward
Power Loss (W)
60
180°
120°
90°
60°
30°
50
45
40
RMS limit
35
30
25
Ø
20
Conduction angle
15
10
VS-40EPS.. Series
TJ = 150 °C
5
0
0
5
10
15
20
25
30
35
100
TJ = 25 °C
TJ = 150 °C
10
VS-40EPS.. Series
1
40
0
0.5
1.0
1.5
2.0
2.5
3.0
VFM - Forward Voltage Drop (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Forward Voltage Drop Chacteristics
80
500
DC
180°
120°
90°
60°
30°
70
60
50
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
450
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
1000
RMS limit
40
30
Ø
Conduction period
20
VS-40EPS.. Series
TJ = 150°C
10
400
350
300
250
200
VS-40EPS.. Series
150
0
100
0
10
20
30
40
50
60
70
0.01
0.1
1.0
Average Forward Current (A)
Pulse Train Duration (S)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
ZthJC - Transient Thermal
Impedance (°C/W)
1
Steady state value:
(DC operation)
0.1
Single pulse
0.01
0.001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
VS-40EPS.. Series
0.1
1
Square Wave Pulse Duration (s)
Fig. 7 - Thermal Impedance ZthJC Characteristics
Revision: 27-Nov-2019
Document Number: 94343
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
E
P
S
12
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (40 = 40 A)
3
-
Circuit configuration:
4
-
Package:
5
-
P = TO-247AC 2L
Type of silicon:
E = single diode
S = standard recovery rectifier
6
-
Voltage rating
7
-
Environmental digit:
08 = 800 V
12 = 1200 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40EPS08-M3
25
500
Antistatic plastic tubes
VS-40EPS12-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96144
Part marking information
www.vishay.com/doc?95648
SPICE model
www.vishay.com/doc?96047
Revision: 27-Nov-2019
Document Number: 94343
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000