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“Half Bridge” MTP Trench IGBT, 75 A
FEATURES
• Trench gate field stop technology
• Positive VCE(on) temperature coefficient
Available
• 5 μs short circuit capability
Available
• Square RBSOA
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery and low VF
• Al2O3 DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
MTP
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRIMARY CHARACTERISTICS
VCES
1200 V
VCE(on) typical at IC = 40 A
2.24 V
IC at TC = 25 °C
75 A
Speed
8 kHz to 30 kHz
Package
MTP
Circuit configuration
Half bridge
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
SYMBOL
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
IF
Diode maximum forward current
IFM
Gate to emitter voltage
VGE
RMS isolation voltage
VISOL
Maximum power dissipation (only IGBT)
TEST CONDITIONS
VCES
PD
TC = 25 °C
MAX.
UNITS
1200
V
75
TC = 102 °C
40
TJ = 150 °C, tp = 6 ms, VGE = 15 V
150
120
TC = 105 °C
A
21
160
± 20
Any terminal to case, t = 1 min
2500
TC = 25 °C
305
TC = 100 °C
122
V
W
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Transconductance
Zero gate voltage collector current
Gate to emitter leakage current
SYMBOL
V(BR)CES
VCE(on)
VGE(th)
VGE(th)/ΔTJ
gfe
ICES
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
VGE = 0 V, IC = 2 mA
1200
-
-
V
2.65
VGE = 15 V, IC = 40 A
-
2.24
VGE = 15 V, IC = 80 A
-
2.84
-
VGE = 15 V, IC = 40 A, TJ = 150 °C
-
2.53
-
VGE = 15 V, IC = 80 A, TJ = 150 °C
-
3.44
-
4.6
5.9
7.6
VCE = VGE, IC = 2 mA (25 °C to 125 °C)
-
-13
-
VCE = 50 V, IC = 40 A
-
29
-
S
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
-
0.6
50
μA
VCE = VGE, IC = 2 mA
V
mV/°C
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.31
-
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
1.16
-
VGE = ± 20 V
-
-
±250
nA
MIN.
TYP.
MAX.
UNITS
-
158
-
-
17
-
-
85
-
-
0.76
-
-
1.14
-
-
1.9
-
VCC = 600 V, IC = 40 A, VGE = 15 V,
Rg = 5 Ω, L = 200 μH, TJ = 125 °C,
energy losses include tail and diode
reverse recovery
-
1.02
-
-
1.83
-
-
2.85
-
VGE = 0 V
VCC = 25 V
f = 1.0 MHz
-
3200
-
-
220
-
-
80
-
mA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
TEST CONDITIONS
IC = 40 A
VCC = 960 V
VGE = 15 V
VCC = 600 V, IC = 40 A, VGE = 15 V,
Rg = 5 Ω, L = 200 μH, TJ = 25 °C,
energy losses include tail and diode
reverse recovery
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 120 A
VCC = 800 V, Vp = 1200 V
Rg = 10 Ω, VGE = + 15 V to 0 V
Short circuit safe operating area
SCSOA
TJ = 150 °C,
VCC = 600 V, Vp = 1200 V
VGE = + 15 V to 0 V
nC
mJ
pF
Fullsquare
5
-
-
μs
UNITS
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Diode forward voltage drop
Reverse recovery energy of the diode
SYMBOL
VFM
Erec
Diode reverse recovery time
trr
Peak reverse recovery current
Irr
MIN.
TYP.
MAX.
IC = 40 A
TEST CONDITIONS
-
2.98
3.38
IC = 80 A
-
3.90
-
IC = 40 A, TJ = 125 °C
-
3.08
-
IC = 80 A, TJ = 125 °C
-
4.29
-
IC = 40 A, TJ = 150 °C
-
3.12
-
VGE = 15 V, Rg = 5 Ω, L = 200 μH
VCC = 600 V, IC = 40 A
TJ = 125 °C
-
574
-
μJ
-
120
-
ns
-
43
-
A
V
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature
range
TJ, TStg
IGBT
Junction to case
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
-40
-
150
°C
-
-
0.41
-
-
0.61
-
0.06
-
5.5
-
-
8
-
-
RthJC
Diode
Case to sink per module
RthCS
Clearance (1)
External shortest distance in air between 2 terminals
Creepage (2)
Shortest distance along external surface of the
insulating material between 2 terminals
Mounting torque to heatsink
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
Nm
66
g
Allowable Case Temperature (°C)
180
135
120
TJ = 125 °C
105
90
IC (A)
mm
3 ± 10 %
Weight
150
°C/W
75
TJ = 150 °C
TJ = 25 °C
60
45
30
15
0
0
1.0
2.0
3.0
4.0
5.0
160
140
120
DC
100
80
60
40
20
0
6.0
0
10
20
30
40
50
60
70
80
90 100
VCE (V)
IC - Continuous Collector Current (A)
Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V
Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs.
Case Temperature
150
80
135
120
105
60
50
IC (A)
90
IC (A)
VCE = 20 V
70
VGE = 12 V
VGE = 15 V
VGE = 18 V
75
60
40
30
TJ = 125 °C
45
20
30
10
VGE = 9 V
15
0
TJ = 25 °C
0
0
1.0
2.0
3.0
4.0
5.0
6.0
VCE (V)
Fig. 2 - Typical Trench IGBT Output Characteristics, TJ = 125 °C
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5 10
VGE (V)
Fig. 4 - Typical Trench IGBT Transfer Characteristics
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1000
6.0
tf
Switching Time (ns)
TJ = 25 °C
5.5
VGEth (V)
5.0
4.5
TJ = 125 °C
4.0
100
td(off)
tr
10
td(on)
3.5
3.0
1
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
10
15
20
25
IC (mA)
30
35
40
IC (A)
Fig. 5 - Typical Trench IGBT Gate Threshold Voltage
Fig. 8 - Typical Trench IGBT Switching Time vs. IC
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15V/-15V, L = 500 μH
5
10
4.5
TJ = 150 °C
Eon
4
1
0.1
Energy (mJ)
ICES (mA)
3.5
TJ = 125 °C
0.01
TJ = 25 °C
0.001
3
2.5
2
Eoff
1.5
1
0.5
0.0001
0
200
400
600
800
1000
1200
0
5
10
15
20
VCES (V)
25
30
35
40
45
50
Rg (:)
Fig. 6 - Typical Trench IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical Trench IGBT Energy Loss vs. Rg
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, IC = 40 A, VGE = +15V/-15V, L = 500 μH
1000
2
1.8
tf
Switching Time (ns)
1.6
Energy (mJ)
1.4
1.2
Eoff
1
0.8
0.6
Eon
0.4
100
td(on)
td(off)
tr
10
0.2
1
0
0
5
10
15
20
25
30
35
40
45
50
IC (A)
Fig. 7 - Typical Trench IGBT Energy Loss vs. IC
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15V/-15V, L = 500 μH
0
5
10
15
20
25
30
35
40
45
50
Rg (Ω)
Fig. 10 - Typical Trench IGBT Switching Time vs. Rg
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, IC = 40 A, VGE = +15V/-15V, L = 500 μH
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50
18
16
40
14
30
10
Irr (A)
VGE (V)
12
8
20
6
4
TJ = 25 °C
VCE= 960V
IC = 40A
2
10
0
0
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
QG (nC)
Rg (Ω)
Fig. 11 - Typical Trench IGBT Gate Charge vs.
Gate to Emitter Voltage
Fig. 14 - Typical Diode Irr vs. Rg
TJ = 125 °C; IF = 40 A
60
50
120
45
100
TJ = 125 °C
60
TJ = 25 °C
TJ = -40 °C
35
Irr (A)
IF (A)
40
80
30
25
40
20
20
15
0
10
0
1.0
2.0
3.0
4.0
5.0
0
400
600
800
1000
VFM (V)
dIF/dt (A/μs)
Fig. 12 - Typical Diode Forward Characteristics
Fig. 15 - Typical Diode Irr vs. dIF/dt
VCC = 600 V; VGE = 15 V; ICE = 40 A; TJ = 125 °C
50
5
50A
RG = 5 Ω
4.5
40
40A
4
RG = 10 Ω
3.5
Qrr (μC)
30
Irr (A)
200
RG = 30 Ω
20
RG = 50 Ω
3
2.5
50Ω
2
30Ω
20A
5.0Ω
10Ω
1.5
1
10
0.5
0
0
10
20
30
40
50
60
IF (A)
Fig. 13 - Typical Diode Irr vs. IF,
TJ = 125 °C
70
0
200
400
600
800
1000
1200
dIF/dt (A/μs)
Fig. 16 - Typical Diode Qrr vs. dIF/dt
VCC = 600 V; VGE = 15 V; TJ = 125 °C
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1000
ICE - Collector-Emitter Current (A)
1000
IC (A)
100
10
1
0.1
1
10
100
TA = 25 °C
TJ = 150 °C
Single pulse
tp = 100 μs
tp = 500 μs
tp = 1 ms
tp = 6 ms
100
10
BVCES limited
1
0.1
1000
1
10
100
1000
VCE (V)
VCE - Collector-Emitter Voltage (V)
Fig. 17 - Trench IGBT Reverse BIAS SOA
TJ = 150 °C, IC = 120 A, Rg = 10 Ω, VGE = +15V / 0V, VCC = 800 V,
Vp = 1200 V
Fig. 18 - Trench IGBT Safe Operating Area
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Trench IGBT Thermal Impedance ZthJC Characteristics
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
t1 - Rectangular Pulse Duration (s)
Fig. 20 - Maximum Diode Thermal Impedance ZthJC Characteristics
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Driver
L
+
-
D.U.T.
0
VCC
D +
C -
1K
900 V
D.U.T.
Fig. 21 - Gate Charge Circuit (Turn-Off)
Fig. 23 - S.C. SOA Circuit
L
Diode clamp/
D.U.T.
L
- +
80 V
+
-
-5V
D.U.T
D.U.T./
driver
1000 V
Rg
+
VCC
Rg
Fig. 22 - RBSOA Circuit
Fig. 24 - Switching Loss Circuit
ORDERING INFORMATION TABLE
Device code
VS-
40
MT
120
P
H
A
PbF
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (40 = 40 A)
3
-
Essential part number
4
-
Voltage code (120 = 1200 V)
5
-
Speed / type (P = trench IGBT)
6
-
Circuit configuration (H = half bridge)
7
-
A = Al2O3 DBC substrate
8
-
PbF = lead (Pb)-free
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CIRCUIT CONFIGURATION
3, 4
11
12
5, 6
9
10
7, 8
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95175
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Outline Dimensions
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MTP
DIMENSIONS in millimeters
39.5 ± 0.3
12 ± 0.3
3.0
2.1
Ø 1.1 ± 0.025
1.5
12 ± 0.3
20.5 ± 0.5
16 ± 0.3
2.5 ± 0.1
5
z detail
Use self tapping screw
or M 2.5 x X
e.g. M 2.5 x 6 or M 2.5 x 8
according to PCB
thickness used
45
63.5 ± 0.3
0.8 Ra
1.3
7.4
48.7 ± 0.3
14.7
15
12
4.2
9
33.2 ± 0.3
6
1.2
4 3
6 5
2
13
10
11
12
5.2
9
22.7
1
45°
5.4
19.8 ± 0.3
8 7
31.8 ± 0.3
Dia. 5 (x 4)
Ø 2.1 (x 4)
R 2.6 (x 2)
3
27.5 ± 0.3
6
Pins position
with tolerance
0.6
11.5
14.7
Note
• Unused terminals are not assembled in the package
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