VS-40TPS...-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
2
(A)
FEATURES
• Designed and qualified
JEDEC®-JESD 47
according
to
• Low IGT parts available
1
• 125 °C max. operating junction temperature
2
3
1 (K) (G) 3
TO-247AC 3L
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
PRIMARY CHARACTERISTICS
IT(AV)
35 A
VDRM/VRRM
800 V, 1200 V
VTM
1.45 V
IGT
150 mA
TJ
-40 °C to +125 °C
Package
TO-247AC 3L
Circuit configuration
Single SCR
• Typical usage is in input rectification crowbar (soft start)
and AC switch motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
35
55
IRMS
VRRM/VDRM
ITSM
VT
VALUES
40 A, TJ = 25 °C
UNITS
A
800 to 1200
V
600
A
1.45
V
dV/dt
1000
V/μs
dI/dt
100
A/μs
-40 to +125
°C
VRSM,
MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM/VDRM,
MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VS-40TPS08A-M3
800
900
VS-40TPS08-M3
800
900
VS-40TPS12A-M3
1200
1300
VS-40TPS12-M3
1200
1300
10
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VS-40TPS...-M3 Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
Maximum I2t for fusing
Maximum I2t for fusing
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES UNITS
TC = 79 °C, 180° conduction half sine wave
35
IT(RMS)
ITSM
I2t
I2t
Low level value of threshold voltage
VT(TO)1
High level value of threshold voltage
VT(TO)2
Low level value of on-state slope resistance
rt1
High level value of on-state slope resistance
rt2
55
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
A
500
Initial
TJ = TJ max.
t = 0.1 ms to 10 ms, no voltage reapplied
600
1250
1760
17 600
1.02
1.23
TJ = 125 °C
9.74
7.50
A2s
A2s
V
m
Maximum peak on-state voltage
VTM
110 A, TJ = 25 °C
1.85
V
Maximum rate of rise of turned-on current
dI/dt
TJ = 25 °C
100
A/μs
Maximum holding current
IH
Anode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C
200
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
300
TJ = 25 °C
0.5
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage
40TPS12A
Maximum rate of rise of off-state voltage
40TPS12
IRRM/IDRM
TJ = 125 °C
VR = Rated VRRM/VDRM
mA
10
500
dV/dt
TJ = TJ maximum, linear to 80 % VDRM, Rg - k = 100
V/μs
1000
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
TEST CONDITIONS
PG(AV)
2.5
IGM
2.5
A
- VGM
10
V
VGT
TJ = 25 °C
TJ = - 40 °C
IGT
Maximum DC gate voltage not to trigger
for 40TPS12
VGD
Maximum DC gate current not to trigger
for 40TPS12
IGD
Maximum DC gate voltage not to trigger
for 40TPS12A
VGD
Maximum DC gate current not to trigger
for 40TPS12A
IGD
TJ = 25 °C
W
4.0
Anode supply = 6 V
resistive load
TJ = 125 °C
Maximum required DC gate current to trigger
UNITS
10
TJ = - 40 °C
Maximum required DC gate voltage to trigger
VALUES
PGM
2.5
V
1.7
270
Anode supply = 6 V
resistive load
150
TJ = 125 °C
80
TJ = 25 °C, for 40TPS..APbF and 40TPS..A-M3
40
mA
0.25
V
6
mA
0.15
V
1
mA
TJ = 125 °C, VDRM = rated value
TJ = 125 °C, VDRM = rated value
Revision: 26-Feb-2019
Document Number: 94388
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VS-40TPS...-M3 Series
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Maximum thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
-40 to +125
°C
0.6
DC operation
°C/W
40
Mounting surface, smooth and greased
0.2
6
Approximate weight
Mounting torque
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
40TPS08A
Marking device
40TPS12A
Case style TO-247AC 3L
40TPS08
130
40TPS..Series
RthJC (DC) = 0.6 °C/W
120
110
Conduction Angle
100
30°
60°
90°
90
120°
180°
80
70
0
10
20
30
40
Average On-State Current (A)
Maximum Average On-State Power Loss (W)
Maximum Allowable Case Temperature (°C)
40TPS12
60
40
20
Conduction Angle
10
40TPS..Series
TJ = 125 °C
0
0
110
Conduction Period
100
60°
90°
120°
180°
80
DC
70
0
10
20
30
40
50
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
60
Maximum Average On-State Power Loss (W)
Maximum Allowable Case Temperature (°C)
120
30°
5
10
15
20
25
30
35
40
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
40TPS..Series
RthJC (DC) = 0.6 °C/W
90
RMS Limit
30
Fig. 1 - Current Rating Characteristics
130
180°
120°
90°
60°
30°
50
80
DC
180°
120°
90°
60°
30°
70
60
50
RMS Limit
40
30
Conduction Period
20
40TPS..Series
TJ = 125 °C
10
0
0
10
20
30
40
50
60
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 26-Feb-2019
Document Number: 94388
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VS-40TPS...-M3 Series
Vishay Semiconductors
Peak Half Sine Wave On-State Current (A)
Peak Half S ine Wave On-State Current (A)
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550
At any rated load condition and with
rated VRRM applied following surge
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 S
500
450
400
350
300
40TPS..Series
250
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
600
500
450
400
350
300
40TPS.. Series
250
0.01
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
Maximum non-repetitive surge current vs.
pulse train duration.
Control of conduction may not be maintained
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
550
Fig. 6 - Maximum Non-Repetitive Surge Current
100
10
TJ = 25 °C
TJ = 125 °C
40TPS.. Series
1
0.5
1
1.5
2
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
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VS-40TPS...-M3 Series
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Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
tr = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
10
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 2.5 ms
(4) PGM = 10 W, tp = 5 ms
a)
b)
1
TJ = - 40 °C
TJ = 50 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
Frequency limited by PG(AV)
40TPS..Series
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
100 Rectangular gate pulse
a) Recommended load line for rated dI/dt: 20 V, 30 Ω
tr = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 2.5 ms
(4) PGM = 10 W, tp = 5 ms
10
VGD
TJ = - 40 °C
1
TJ = 25 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
Fig. 8 - Gate Characteristics
(4)
b)
0.001
(2)
(1)
a)
Frequency limited by PG(AV)
IGD
0.1
0.0001
(3)
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Transient Thermal Impedance ZthJC (°C/W)
Fig. 9 - Gate Characteristics, 40TPS..A Series
1
0.1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
40TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristics
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Document Number: 94388
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VS-40TPS...-M3 Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
VS-
Device code
1
40
T
P
S
12
A
-M3
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (40 = 40 A)
3
-
Circuit configuration:
T = thyristor
4
-
Package:
P = TO-247AC 3L
5
-
Type of silicon:
S = standard recovery rectifier
6
-
7
-
8
-
08 = 800 V
12 = 1200 V
Voltage ratings
A = low IGT selection 40 mA maximum
None = standard Igt selection
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40TPS08A-M3
25
500
Antistatic plastic tubes
VS-40TPS08-M3
25
500
Antistatic plastic tubes
VS-40TPS12A-M3
25
500
Antistatic plastic tubes
VS-40TPS12-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
Revision: 26-Feb-2019
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Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
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Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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