VS-40TPS08PBF

VS-40TPS...PbF Series, VS-40TPS...-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 (A) • Designed and qualified JEDEC®-JESD 47 according to • Low IGT parts available • 125 °C max. operating junction temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 (K) (G) 3 TO-247AC Available APPLICATIONS PRIMARY CHARACTERISTICS • Typical usage is in input rectification crowbar (soft start) and AC switch motor control, UPS, welding and battery charge IT(AV) 35 A VDRM/VRRM 800 V, 1200 V VTM 1.45 V IGT 150 mA TJ -40 °C to +125 °C Package TO-247AC Circuit configuration Single SCR DESCRIPTION The VS-40TPS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 35 A IRMS 55 VRRM/VDRM 800/1200 V 600 A 1.45 V dV/dt 1000 V/μs dI/dt 100 A/μs -40 to +125 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA VS-40TPS08APbF, VS-40TPS08A-M3 800 900 VS-40TPS08PbF, VS-40TPS08-M3 800 900 VS-40TPS12APbF, VS-40TPS12A-M3 1200 1300 VS-40TPS12PbF, VS-40TPS12-M3 1200 1300 ITSM VT 40 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER 10 Revision: 14-Sep-17 Document Number: 94388 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS...PbF Series, VS-40TPS...-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum continuous RMS on-state current as AC switch Maximum peak, one-cycle  non-repetitive surge current SYMBOL IT(AV) TEST CONDITIONS VALUES UNITS TC = 79 °C, 180° conduction half sine wave 35 IT(RMS) ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 55 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied Initial  TJ = TJ max. 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied 600 1250 1760 17 600 Low level value of threshold voltage VT(TO)1 1.02 High level value of threshold voltage VT(TO)2 1.23 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 A 500 TJ = 125 °C 9.74 7.50 A2s A2s V m Maximum peak on-state voltage VTM 110 A, TJ = 25 °C 1.85 V Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 100 A/μs Maximum holding current IH Anode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C 200 Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C 300 TJ = 25 °C 0.5 Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage 40TPS12A Maximum rate of rise of off-state voltage 40TPS12 IRRM/IDRM TJ = 125 °C VR = Rated VRRM/VDRM mA 10 500 dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg- k = 100  V/μs 1000 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL TEST CONDITIONS Maximum required DC gate current to trigger UNITS 10 PG(AV) 2.5 IGM 2.5 A - VGM 10 V VGT IGT Maximum DC gate voltage not to trigger for 40TPS12 VGD Maximum DC gate current not to trigger for 40TPS12 IGD Maximum DC gate voltage not to trigger for 40TPS12A VGD Maximum DC gate current not to trigger for 40TPS12A IGD TJ = 25 °C Anode supply = 6 V resistive load 2.5 TJ = 125 °C 1.7 TJ = - 40 °C 270 TJ = 25 °C W 4.0 TJ = - 40 °C Maximum required DC gate voltage to trigger VALUES PGM Anode supply = 6 V resistive load 150 TJ = 125 °C 80 TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF 40 V mA 0.25 V 6 mA 0.15 V 1 mA TJ = 125 °C, VDRM = Rated value TJ = 125 °C, VDRM = Rated value Revision: 14-Sep-17 Document Number: 94388 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS...PbF Series, VS-40TPS...-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Maximum thermal resistance,  case to heatsink RthCS TEST CONDITIONS UNITS -40 to +125 °C 0.6 DC operation 40 Mounting surface, smooth and greased °C/W 0.2 Approximate weight Mounting torque VALUES 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 40TPS08A Marking device 40TPS12A Case style TO-247AC 40TPS08 130 40TPS.. Series R thJC (DC) = 0.6 °C/ W 120 110 Conduction Angle 100 30° 60° 90° 90 120° 180° 80 70 0 10 20 30 Average On-state Current (A) Fig. 1 - Current Rating Characteristics 40 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 40TPS12 130 40TPS.. Series RthJC (DC) = 0.6 °C/ W 120 110 Conduction Period 100 30° 90 60° 90° 120° 180° 80 DC 70 0 10 20 30 40 50 60 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Revision: 14-Sep-17 Document Number: 94388 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS...PbF Series, VS-40TPS...-M3 Series Vishay Semiconductors 60 180° 120° 90° 60° 30° 50 40 Peak Half Sine Wa ve On-state Current (A) Maximum Avera ge On-state Power Loss (W) www.vishay.com RMS Limit 30 20 Conduction Angle 40TPS.. Series TJ= 125°C 10 0 0 5 10 15 20 25 30 35 40 Peak Half Sine Wa ve On-state Current (A) Maximum Average On-state Power Loss (W) DC 180° 120° 90° 60° 30° 40 RMS Limit 30 Conduction Period 20 40TPS.. Series TJ = 125°C 10 0 0 10 20 30 40 50 450 400 350 300 40TPS.. Series 250 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 80 50 500 1 Fig. 3 - On-State Power Loss Characteristics 60 At Any Ra ted Load Condition And With Rated V RRM App lied Following Surge. Initia l TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Avera ge On-sta te Current (A) 70 550 60 600 Maximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapp lied Rated VRRM Reapp lied 550 500 450 400 350 300 40TPS.. Series 250 0.01 0.1 1 Pulse Tra in Duration (s) Avera ge On-sta te Current (A) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instanta neous On-state Current (A) 100 10 TJ= 25°C TJ= 125°C 40TPS.. Series 1 0.5 1 1.5 2 Instantaneous On-state Voltag e (V) Fig. 7 - On-State Voltage Drop Characteristics Revision: 14-Sep-17 Document Number: 94388 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS...PbF Series, VS-40TPS...-M3 Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 μs, tp ≥ 6 μs 10 (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 2.5 ms (4) PGM = 10 W, tp = 5 ms a) b) TJ = - 40 °C 1 TJ = 50 °C TJ = 125 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 Frequency limited by PG(AV) 40TPS..Series 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) 100 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 μs, tp ≥ 6 μs (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 2.5 ms (4) PGM = 10 W, tp = 5 ms 10 VGD TJ = - 40 °C 1 TJ = 25 °C TJ = 125 °C Instantaneous Gate Voltage (V) Fig. 8 - Gate Characteristics (4) b) 0.001 (2) (1) a) Frequency limited by PG(AV) IGD 0.1 0.0001 (3) 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) Transient Thermal Impedance ZthJC (°C/W) Fig. 9 - Gate Characteristics, 40TPS..A Series 1 0.1 Steady State Value (DC Operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 40TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics Revision: 14-Sep-17 Document Number: 94388 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS...PbF Series, VS-40TPS...-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE VS- Device code 1 40 T P S 12 A PbF 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: T = Thyristor 4 - 5 - 6 - 7 - Package: P = TO-247 Type of silicon: S = standard recovery rectifier 08 = 800 V 12 = 1200 V Voltage ratings A = low Igt selection 40 mA maximum None = standard Igt selection 8 - Environmental digit: PbF = lead (Pb)-free and RoHS compliant -M3 = halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40TPS08APbF 25 500 Antistatic plastic tubes VS-40TPS08A-M3 25 500 Antistatic plastic tubes VS-40TPS08PbF 25 500 Antistatic plastic tubes VS-40TPS08-M3 25 500 Antistatic plastic tubes VS-40TPS12APbF 25 500 Antistatic plastic tubes VS-40TPS12A-M3 25 500 Antistatic plastic tubes VS-40TPS12PbF 25 500 Antistatic plastic tubes VS-40TPS12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95542 TO-247AC PbF www.vishay.com/doc?95226 TO-247AC-M3 www.vishay.com/doc?95007 Revision: 14-Sep-17 Document Number: 94388 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC - 50 mils L/F DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Plating (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q Revision: 20-Apr-17 Document Number: 95542 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000