VS-40TPS12LHM3
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
2
(A)
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
• Flexible solution for reliable AC power
rectification
1
• Easy control peak current at charger power up
to reduce passive / electromechanical components
2
3
1 (K) (G) 3
TO-247AD 3L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
PRIMARY CHARACTERISTICS
IT(AV)
35 A
VDRM/VRRM
1200 V
VTM
1.45 V
IGT
150 mA
TJ
-40 °C to +150 °C
Package
TO-247AD 3L
Circuit configuration
Single SCR
DESCRIPTION
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
35
55
IRMS
UNITS
A
VRRM/VDRM
1200
V
ITSM
600
A
VT
1.45
V
dv/dt
40 A, TJ = 25 °C
1000
V/μs
di/dt
100
A/μs
-40 to +150
°C
VRRM / VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM / IDRM
AT 150 °C
mA
1200
1300
20
TJ
VOLTAGE RATINGS
PART NUMBER
VS-40TPS12LHM3
Revision: 20-May-2019
Document Number: 95925
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VS-40TPS12LHM3
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
TC = 104 °C, 180° conduction half sine wave
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
55
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
Initial
TJ = TJ max.
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
600
1250
1760
17 600
VT(TO)1
1.02
High level value of threshold voltage
VT(TO)2
1.23
rt1
High level value of on-state slope resistance
rt2
A
500
Low level value of threshold voltage
Low level value of on-state slope resistance
UNITS
35
TJ = 125 °C
9.74
7.50
A2s
A2s
V
m
Maximum peak on-state voltage
VTM
110 A, TJ = 25 °C
1.85
V
Maximum rate of rise of turned-on current
di/dt
TJ = 25 °C
100
A/μs
Maximum holding current
IH
Anode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C
300
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
350
TJ = 25 °C
0.5
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage
IRRM/IDRM
dv/dt
TJ = 150 °C
VR = rated VRRM/VDRM
TJ = 150 °C, linear to 80 % VDRM, Rg- k = 100
mA
20
1000
V/μs
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
TEST CONDITIONS
PGM
10
PG(AV)
2.5
IGM
2.5
A
-VGM
10
V
2.0
TJ = -40 °C
Maximum required DC gate voltage to trigger
VGT
Maximum required DC gate current to trigger
IGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
TJ = 25 °C
Anode supply = 6 V
resistive load
1.7
TJ = 150 °C
1.2
TJ = -40 °C
200
TJ = 25 °C
W
Anode supply = 6 V
resistive load
TJ = 150 °C
TJ = 125 °C, VDRM = rated value
150
V
mA
70
0.25
V
6
mA
Revision: 20-May-2019
Document Number: 95925
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS12LHM3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
Maximum thermal resistance, junction to ambient
RthJA
Maximum thermal resistance, case to heat sink
RthCS
VALUES
UNITS
-40 to +150
°C
0.6
DC operation
Mounting surface, smooth and greased
0.2
Approximate weight
Mounting torque
oz.
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
40TPS12LHM3
RthJC (DC) = 0.6 °C/W
140
Conduction
130
120
110
100
60° 90° 120° 180°
80
0
10
20
30
40
50
Max. Average On-State Power Loss (W)
Max. Allowable Case Temperature (°C)
160
30°
180°
120°
90°
60°
30°
80
70
60
RMS limit
50
40
30
Conduction angle
20
40TPS12LHM3
TJ = 150 °C
10
0
0
Conduction angle
130
120
110
100
DC
80
30° 60°
180°
120°
70
0
20
40
60
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
80
Max. Average On-State Power Loss (W)
Max. Allowable Case Temperature (°C)
40TPS12LHM3
RthJC (DC) = 0.6 °C/W
90°
20
30
40
50
Fig. 3 - On-State Power Loss Characteristics
160
90
10
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
140
40TPS12LH
90
Average On-State Current (A)
150
g
0.21
Case style TO-247AD 3L
90
6
minimum
Marking device
150
°C/W
40
100
180°
120°
90°
60°
30°
80
DC
60
RMS limit
40
Conduction angle
40TPS12LHM3
TJ = 150 °C
20
0
0
10
20
30
40
50
60
70
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 20-May-2019
Document Number: 95925
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS12LHM3
www.vishay.com
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
550
Vishay Semiconductors
At any rated load condition and with
rated VRRM applied following surge.
Initial T J = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
500
450
400
350
300
40TPS12LHM3
250
1
10
600
Maximum non repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
550
500
450
400
350
300
40TPS12LHM3
250
0.01
100
0.1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
IF - Instantaneous Forward Current (A)
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
40TPS12LHM3
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
VF - Forward Voltage Drop (V)
Fig. 7 - On-State Voltage Drop Characteristics
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
tr = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
10
b)
TJ = - 40 °C
TJ = 50 °C
1
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 2.5 ms
(4) PGM = 10 W, tp = 5 ms
a)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
40TPS..Series
0.1
Frequency limited by PG(AV)
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Revision: 20-May-2019
Document Number: 95925
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-40TPS12LHM3
Transient Thermal Impedance ZthJC (°C/W)
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Vishay Semiconductors
1
0.1
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
40TPS12LHM3
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
VS-
Device code
1
40
T
P
S
12
A
L
H
M3
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (40 = 40 A)
3
-
Circuit configuration:
T = thyristor
4
-
Package:
P = TO-247
5
-
Type of silicon:
S = standard recovery rectifier
6
-
7
-
Voltage ratings
12 = 1200 V
A = Low Igt selection 40 mA maximum
None = standard Igt selection
8
-
L = long leads
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40TPS12LHM3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AD 3L
www.vishay.com/doc?95626
Part marking information
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 20-May-2019
Document Number: 95925
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
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Document Number: 91000
