VS-40TPS16L-M3
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
2
(A)
• Designed and qualified
JEDEC® - JESD 47
according
to
• Flexible solution for reliable AC power
rectification
1
• Easy control peak current at charger power up
to reduce passive / electromechanical components
2
3
1 (K)
TO-247AD 3L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
(G) 3
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
PRIMARY CHARACTERISTICS
IT(AV)
35 A
VDRM/VRRM
1600 V
VTM
1.45 V
IGT
150 mA
TJ
-40 °C to +125 °C
Package
TO-247AD 3L
Circuit configuration
Single SCR
DESCRIPTION
The VS-40TPS16L-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
AEC-Q101 qualified P/N available (40TPS16LHM3).
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
35
55
IRMS
VRRM/VDRM
ITSM
VT
VALUES
40 A, TJ = 25 °C
dv/dt
di/dt
UNITS
A
1600
V
500
A
1.45
V
1000
V/μs
100
A/μs
-40 to +125
°C
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
1600
1700
10
TJ
VOLTAGE RATINGS
PART NUMBER
VS-40TPS16L-M3
Revision: 31-Jul-2018
Document Number: 95994
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES UNITS
TC = 79 °C, 180° conduction half sine wave
35
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
Low level value of threshold voltage
VT(TO)1
High level value of threshold voltage
VT(TO)2
Low level value of on-state slope resistance
rt1
High level value of on-state slope resistance
rt2
Maximum peak on-state voltage
VTM
Maximum rate of rise of turned-on current
di/dt
55
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Initial
TJ = TJ max.
t = 0.1 ms to 10 ms, no voltage reapplied
500
880
1250
12 500
1.02
1.23
TJ = 125 °C
9.74
7.50
110 A, TJ = 25 °C
1.92
90 A, TJ = 25 °C
1.82
TJ = 25 °C
100
Maximum holding current
IH
Anode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C
300
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
350
TJ = 25 °C
0.5
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage
IRRM/IDRM
dv/dt
TJ = 125 °C
A
420
10 ms sine pulse, rated VRRM applied
VR = rated VRRM/VDRM
TJ = TJ maximum, linear to 80 % VDRM, Rg- k = open
A2s
A2s
V
m
V
A/μs
mA
10
1000
V/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
TEST CONDITIONS
PG(AV)
2.5
IGM
2.5
A
-VGM
10
V
VGT
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
Maximum required DC gate current to trigger
UNITS
10
TJ = -40 °C
Maximum required DC gate voltage to trigger
VALUES
PGM
IGT
TJ = 25 °C
TJ = 125 °C
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
TJ = 125 °C, VDRM = rated value
W
4.0
2.5
V
1.7
270
150
mA
80
0.25
V
6
mA
Revision: 31-Jul-2018
Document Number: 95994
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VS-40TPS16L-M3
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Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
VALUES
UNITS
TJ, TStg
-40 to +125
°C
Maximum thermal resistance, junction to case
RthJC
0.6
Maximum thermal resistance, junction to ambient
RthJA
Maximum thermal resistance, case to heat sink
RthCS
Maximum junction and storage temperature range
TEST CONDITIONS
DC operation
°C/W
40
Mounting surface, smooth, and greased
0.25
6
Approximate weight
minimum
Mounting torque
maximum
g
0.21
oz.
6 (5)
kgf · cm
(lbf · in)
12 (10)
Marking device
Case style TO-247AD 3L
40TPS16L
R thJC (DC) = 0.6 °C/W
120
110
Conduction angle
100
30°
60°
90°
90
120°
180°
80
70
0
10
20
30
40
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Rating Characteristics
RthJC (DC) = 0.6 °C/W
110
Conduction period
100
30°
90
60°
90°
120°
180°
80
DC
70
0
10
20
30
40
50
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
60
180°
120°
90°
60°
30°
50
40
RMS limit
30
20
Conduction angle
10
TJ = 125 °C
0
0
5
10
15
20
25
30
35
40
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
130
120
Maximum Average On-State Power Loss (W)
130
60
Maximum Average On-State Power Loss (W)
Maximum Allowable Case Temperature (°C)
80
DC
180°
120°
90°
60°
30°
70
60
50
40 RMS limit
30
Conduction period
20
10
TJ = 125 °C
0
0
10
20
30
40
50
60
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 31-Jul-2018
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VS-40TPS16L-M3
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Vishay Semiconductors
450
350
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
500
Peak Half Sine Wave
Forward Current (A)
400
Peak Half Sine Wave
Forward Current (A)
550
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
300
250
450
400
350
300
250
200
200
1
10
150
0.01
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
100
10
TJ = 25 °C
TJ = 125 °C
1
0.5
1
1.5
2
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20 V, 30 Ω
tr = 0.5 µs, tp >= 6 µs
b) Recommended load line for
= 6 µs
(1) PGM = 100 W, t p = 500 µs
(2) PGM = 50 W, t p = 1 ms
(3) PGM = 20 W, t p = 25 ms
(4) PGM = 10 W, t p = 5 ms
(a)
(b)
= 25 °C
TJ = 125 °C
1
TJ = -40 °C
TJ
Instantaneous Gate Voltage (V)
100
(4) (3)
(2) (1)
VGD
IGD
0.1
0.001
0.01
Frequency Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Revision: 31-Jul-2018
Document Number: 95994
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VS-40TPS16L-M3
Transient Thermal Impedance ZthJC (°C/W)
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1
0.1
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
VS-
Device code
1
40
T
P
S
16
L
-M3
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (40 = 40 A)
3
-
Circuit configuration:
4
-
T = thyristor
Package:
P = TO-247
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage ratings
7
-
L = long leads
8
-
Environmental digit:
16 = 1600 V
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40TPS16L-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AD 3L
www.vishay.com/doc?95626
Part marking information
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 31-Jul-2018
Document Number: 95994
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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Revision: 01-Jan-2023
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Document Number: 91000