VS-40TTS12-M3

VS-40TTS12-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 (A) • Designed and qualified JEDEC®-JESD 47 according to • 140 °C max. operating junction temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 (K) (G) 3 3L TO-220AB APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 25 A VDRM/VRRM 1200 V VTM 1.6 V IGT 35 mA TJ -40 °C to 140 °C Package 3L TO-220AB Circuit configuration Single SCR • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge DESCRIPTION The VS-40TTS12... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 140 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 25 A IRMS 40 VRRM/VDRM 1200 V ITSM 350 A 1.6 V dV/dt 500 V/µs dI/dt 150 A/µs -40 to +140 °C VT TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V TJ °C VS-40TTS12-M3 1200 1200 -25 to +140 Revision: 21-Aug-17 Document Number: 96289 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current Maximum RMS on-state current IT(AV) IRMS Maximum peak, one-cycle  non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Maximum on-state voltage Low level value of on-state slope resistance Low level value of threshold voltage Maximum reverse and direct leakage current Holding current I2t VTM rt VT(TO) IRRM/IDRM IH Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current IL dV/dt dI/dt TEST CONDITIONS TC = 93 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 80 A, TJ = 25 °C TJ = 140 °C TJ = 25 °C VR = Rated VRRM/VDRM TJ = 140 °C Anode supply = 6 V, resistive load, initial IT = 1 A,  TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 25 °C TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open VALUES UNITS 25 40 300 350 450 630 6300 1.6 11.4 0.96 0.5 12 A A2s A2s V m V mA 100 200 500 150 V/μs A/μs VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C 35 mA Maximum required DC gate  voltage to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 °C 1.3 Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Maximum average gate power TJ = 140 °C, VDRM = Rated value W V 0.2 1.5 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C 0.9 4 TJ = 140 °C μs 110 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS TEST CONDITIONS DC operation Marking device UNITS -40 to 140 °C 0.8 °C/W 60 Mounting surface, smooth and greased 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style 3L TO-220AB 40TTS12 Revision: 21-Aug-17 Document Number: 96289 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12-M3 Vishay Semiconductors 140 RthJC (DC) = 0.8 ˚C/W 130 120 Conduction Angle 110 30˚ 100 60˚ 90˚ 90 120˚ 180˚ 80 70 0 5 10 15 20 25 30 Average On-State Current (A) Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 70 DC 180 ˚ 120 ˚ 90 ˚ 60 ˚ 30 ˚ 60 50 40 30 RMS Limit 20 Conduction Period 10 TJ = 125 °C 0 0 10 130 120 Conduction Period 110 100 30˚ 90 60˚ 90˚ 80 120˚ 180˚ DC 70 0 5 10 15 20 25 30 35 40 45 Average On-State Current (A) 280 240 220 200 180 160 140 120 1 50 40 30 RMS Limit 20 Conduction Angle TJ = 125 °C 10 0 0 5 10 15 20 25 30 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 180 ˚ 120 ˚ 90 ˚ 60 ˚ 30 ˚ At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 125 ˚ C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 260 Fig. 2 - Current Rating Characteristics 60 40 Fig. 4 - On-State Power Loss Characteristics Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) RthJC (DC) = 0.8 ˚C/W 30 Average On-State Current (A) Fig. 1 - Current Rating Characteristics 140 20 400 Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 ˚ C No voltage reapplied Rated Vrrm reapplied 350 300 250 200 150 100 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 21-Aug-17 Document Number: 96289 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12-M3 Instantaneous On-State Current (A) www.vishay.com Vishay Semiconductors 1000 TJ = 25 ˚ C TJ = 125 ˚ C 100 10 1 0 1 2 3 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 Ω tr = 0.5 μs, tp >= 6 μs b)Recommended load line for = 6 μs 10 (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) TJ = -10 ˚C VGD TJ = 25 ˚C 1 TJ = 140 ˚C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) Frequency Limited by PG(AV) IGD 0.1 0.001 0.01 0.1 1 10 100 Instantaneous Gate Current (A) ZthJC - Transient Thermal Impedance (°C/W) Fig. 8 - Gate Characteristics 1 Steady state value (DC operation) 0.1 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics Revision: 21-Aug-17 Document Number: 96289 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 T T S 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating, RMS value 3 - Circuit configuration: T = single thyristor 4 - Package: T = TO-220 5 - 6 - Voltage rating (12 = 1200 V) 7 - Environmental digit: Type of silicon: S = standard recovery rectifier -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-40TTS12-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 21-Aug-17 Document Number: 96289 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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