VS-41HF140

VS-40HF(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 40 A FEATURES • High surge current capability • Stud cathode and stud anode version • Leaded version available • Types up to 1600 V VRRM • Designed and qualified for multiple level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) TYPICAL APPLICATIONS • Battery charges PRIMARY CHARACTERISTICS • Converters IF(AV) 40 A Package DO-5 (DO-203AB) Circuit configuration Single • Power supplies • Machine tool controls • Welding MAJOR RATINGS AND CHARACTERISTICS PARAMETER 40HF(R) TEST CONDITIONS IF(AV) 10 TO 120 I2t VRRM UNITS 40 40 A TC 140 110 °C 62 62 A 50 Hz 570 570 60 Hz 595 595 50 Hz 1600 1600 60 Hz 1450 1450 Range 100 to 1200 1400 to 1600 V -65 to 190 -65 to 160 °C IF(RMS) IFSM 140/160 TJ A A2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-40HF(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 200 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 9 4.5 Revision: 07-Sep-17 Document Number: 93513 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40HF(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current IF(AV) IF(RMS) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing Value of threshold voltage (up to 1200 V) Value of threshold voltage (for 1400 V/1600 V) Value of forward slope resistance (up to 1200 V) Value of forward slope resistance (for 1400 V/1600 V) Maximum forward voltage drop I2t 40HF(R) 10 TO 120 140/160 40 40 180° conduction, half sine wave 140 110 62 570 t = 10 ms No voltage  reapplied t = 8.3 ms 595 t = 10 ms 480 100 % VRRM reapplied t = 8.3 ms 500 Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms 1600 No voltage  reapplied t = 8.3 ms 1450 t = 10 ms 1150 100 % VRRM reapplied t = 8.3 ms 1050 t = 0.1 ms to 10 ms, no voltage reapplied 16 000 TEST CONDITIONS VF(TO) UNITS A °C A A A2s A2s 0.65 TJ = TJ maximum V 0.76 VF(TO) rf 4.29 TJ = TJ maximum m 3.8 rf VFM Ipk = 125 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 1.50 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ, TStg 40HF(R) 10 to 120 140 to 160 -65 to 190 UNITS -65 to 160 RthJC DC operation 0.95 RthCS Mounting surface, smooth, flat and greased 0.25 °C K/W Not lubricated thread, tighting on nut (1) Lubricated thread, tighting on nut (1) Not lubricated thread, tighting on hexagon (2) Lubricated thread, tighting on hexagon (2) Maximum allowable mounting torque (+0 %, -10 %) Approximate weight Case style See dimensions - link at the end of datasheet 3.4 (30) 2.3 (20) N·m (lbf · in) 4.2 (37) 3.2 (28) 17 g 0.6 oz. DO-5 (DO-203AB) Notes (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.14 0.10 120° 0.16 0.17 90° 0.21 0.22 60° 0.30 0.31 30° 0.50 0.50 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 07-Sep-17 Document Number: 93513 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40HF(R) Series Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 190 40HF(R) Series (100 V to 1200 V) 180 170 Conduction Angle 160 150 30 ° 60 ° 140 90 ° 120 ° 180 ° 130 0 5 10 15 20 25 30 35 40 45 Average Forward Current (A) 160 40HF(R) Series (1400 V, 1600 V) 150 Conduction Angle 140 130 120 30 ° 180 ° 0 180 Conduction Period 160 150 30 ° 60 ° 90 ° 120 ° 180 ° DC 120 0 10 20 30 40 50 60 70 Average Forward Current (A) 30 35 40 45 140 Conduction Period 130 120 30° 110 60 ° 90° 100 120 ° 90 DC 180 ° 80 0 10 20 30 40 50 60 70 Average Forward Current (A) = W K/ W A hS 5 Rt 1. K/ /W /W 1K -D 5K a elt /W R Maximum Average Forward Power Loss (W) 25 40HF(R) Series (1400 V, 1600 V) 3K RMS Limit 30 20 150 2 40 15 Fig. 4 - Current Ratings Characteristics 180 ° 120 ° 90 ° 60 ° 30 ° 50 10 160 Fig. 2 - Current Ratings Characteristics 60 5 Average Forward Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 40HF(R) Series (100 V to 1200 V) 130 120 ° Fig. 3 - Current Ratings Characteristics 190 140 90 ° 100 Fig. 1 - Current Ratings Characteristics 170 60 ° 110 7K /W 20 Conduction Angle 10 K/ W 40HF(R) Series (100 V to 1200 V) Tj = 190 °C 10 0 0 5 10 15 20 25 30 35 Average Forward Current (A) 40 40 80 120 160 200 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Forward Power Loss Characteristics Revision: 07-Sep-17 Document Number: 93513 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40HF(R) Series 60 Vishay Semiconductors A = 1K /W /W -D aR elt 5K RMS Limit 30 hS Rt 3K W K/ 40 W K/ 50 5 1. DC 180 ° 120 ° 90 ° 60 ° 30 ° 2 Maximum Average Forward Power Loss (W) www.vishay.com /W 7K /W 20 Conduction Period 10 K/ W 40HF(R) Series (100 V to 1200 V) Tj = 190 °C 10 0 0 10 20 30 40 50 60 Average Forward Current (A) 40 70 80 120 160 200 Maximum Allowable Ambient Temperature (°C) 50 A =1 W W R thS K/ W K/ 5K RMS Limit -D 30 K/ W 35 3 K/ 40 1.5 180 ° 120 ° 90 ° 60 ° 30 ° 45 2 /W elt 7K 25 aR Maximum Average Forward Power Loss (W) Fig. 6 - Forward Power Loss Characteristics /W 10 K /W 20 Conduction Angle 15 40HF(R) Series (1400 V, 1600 V) Tj = 160 °C 10 5 0 0 10 20 30 40 Average Forward Current (A) 25 50 75 100 125 150 175 200 Maximum Allowable Ambient Temperature (°C) 70 5 K/ W 1 2K = /W W K/ 50 1. SA DC 180 ° 120 ° 90 ° 60 ° 30 ° 60 R th -D 3K 40 ta el /W RMS Limit 30 Conduction Period 20 40HF(R) Series (1400 V, 1600 V) Tj = 160 °C 10 R Maximum Average Forward Power Loss (W) Fig. 7 - Forward Power Loss Characteristics 5K /W 7 K/ W 10 K/W 0 0 10 20 30 40 50 60 Average Forward Current (A) 70 40 80 120 160 Maximum Allowable Ambient Temperature (°C) Fig. 8 - Forward Power Loss Characteristics Revision: 07-Sep-17 Document Number: 93513 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40HF(R) Series 550 Vishay Semiconductors Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj Max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 500 450 400 350 300 250 200 40HF(R) Series 150 100 1 10 100 1000 100 TJ = 25 °C 40HF(R) Series up to 1200 V 1 0.5 Number Of Equal Amplitude Half Cycle Current Pulses (N) 550 500 450 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj Max. No Voltage Reapplied Rated Vrrm Reapplied 400 350 300 250 200 150 100 0.01 40HF(R) Series 0.1 2 2.5 3 3.5 4 4.5 5 1000 TJ = TJ Max. 100 TJ = 25 °C 10 40HF (R) Series 1 0 1 Pulse Train Duration (s) 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Fig. 12 - Forward Voltage Drop Characteristics (For 1400 V/1600 V) Fig. 10 - Maximum Non-Repetitive Surge Current ZthJC - Transient Thermal Impedance (K/W) 1.5 Fig. 11 - Forward Voltage Drop Characteristics (Up To 1200 V) Instantaneous Forward Current (A) 600 1 Instantaneous Forward Voltage (V) Fig. 9 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) TJ = TJ Max. 10 1 Steady State Value (DC Operation) 0.1 40HF(R) .. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance ZthJC Characteristics Revision: 07-Sep-17 Document Number: 93513 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40HF(R) Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 HF R 160 M 1 2 3 4 5 6 1 - 2 - Vishay Semiconductors product 40 = standard device 41 = not isolated lead 42 = isolated lead with silicone sleeve (red = reverse polarity) (blue = normal polarity) 3 - 4 - 5 - 6 - HF = standard diode None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) Voltage code x 10 = VRRM (see Voltage Ratings table) None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A M = stud base DO-5 (DO-203AB) M6 x 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95344 Revision: 07-Sep-17 Document Number: 93513 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series DIMENSIONS FOR 40HF(R) SERIES in millimeters (inches) Ø 14.6 (0.57) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 ± 0.4 (0.44 ± 0.02) 1/4" 28UNF-2A for metric devices: M6 x 1 1.20 (0.04) Document Number: 95344 Revision: 29-Sep-08 17.40 (0.68) For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series Vishay Semiconductors DIMENSIONS FOR 41HF(R) SERIES in millimeters (inches) 11 (0.43) MAX. Ø 6.3 (0.25) MAX. 107 (4.21) MAX. 118.5 (4.67) MAX. www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95344 Revision: 29-Sep-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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