VS-42CTQ030SHM3, VS-42CTQ030-1HM3
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
D2PAK
FEATURES
TO-262
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-42CTQ030SHM3
VS-42CTQ030-1HM3
PRODUCT SUMMARY
• AEC-Q101 qualified meets JESD 201 class 1A whisker
test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
IF(AV)
2 x 20 A
VR
30 V
VF at IF
0.38 V
IRM
183 mA at 125 °C
TJ max.
150 °C
EAS
13 mJ
Package
(D2PAK),
Diode variation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
TO-263AB
TO-262AA
Common cathode
This center tap Schottky rectifier module has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
20 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
UNITS
40
A
30
V
1100
A
0.38
V
-55 to 150
°C
VS-42CTQ030SHM3
VS-42CTQ030-1HM3
UNITS
30
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
Revision: 21-Oct-14
Document Number: 94963
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 121 °C, rectangular waveform
per leg
VALUES
UNITS
20
per device
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 3 A, L = 2.90 mH
13
mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
A
TEST CONDITIONS
VALUES
UNITS
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
1100
360
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
40 A
20 A
TJ = 125 °C
40 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
Threshold Voltage
VF(TO)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ =TJ maximum
Forward slope resistance
rt
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Rated VR
0.48
0.57
0.38
V
0.51
3
183
mA
0.22
V
6.76
m
2840
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
-55 to 150
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
2.0
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
1.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Mounting torque
Marking device
0.50
2
Approximate weight
°C/W
g
0.07
oz.
minimum
6 (5)
kgf cm
maximum
12 (10)
(lbf in)
Case style D2PAK
42CTQ030SH
Case style TO-262
42CTQ030-1H
Revision: 21-Oct-14
Document Number: 94963
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-42CTQ030SHM3, VS-42CTQ030-1HM3
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
TJ = 150 °C
100
TJ = 125 °C
TJ = 100 °C
10
TJ = 75 °C
1
TJ = 50 °C
0.1
TJ = 25 °C
0.01
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
5
10
15
20
25
30
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
5
10
15
20
25
35
30
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
t1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
t2
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 21-Oct-14
Document Number: 94963
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VS-42CTQ030SHM3, VS-42CTQ030-1HM3
Vishay Semiconductors
16
150
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
140
DC
130
Square wave (D = 0.50)
80 % rated VR applied
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
12
RMS limit
8
DC
4
See note (1)
0
100
0
5
10
15
20
25
0
30
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
Revision: 21-Oct-14
Document Number: 94963
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-42CTQ030SHM3, VS-42CTQ030-1HM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
42
C
T
Q
030
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (40 A)
3
-
Circuit configuration: C = Common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage rating (030 = 30 V)
7
-
S = D2PAK
-1 = TO-262
8
-
None = Tube
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
9
-
H = AEC-Q101 qualified
10
-
M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-42CTQ030SHM3
50
1000
Antistatic plastic tubes
VS-42CTQ030STRRHM3
800
800
13" diameter reel
VS-42CTQ030STRLHM3
800
800
13" diameter reel
VS-42CTQ030-1HM3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
TO-263AB (D2PAK)
www.vishay.com/doc?95046
TO-262AA
www.vishay.com/doc?95419
TO-263AB (D2PAK)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
www.vishay.com/doc?95032
Revision: 21-Oct-14
Document Number: 94963
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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