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VS-42CTQ030STRLHM3

VS-42CTQ030STRLHM3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO263

  • 描述:

    Diode Array 1 Pair Common Cathode Schottky 30V 20A Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO...

  • 详情介绍
  • 数据手册
  • 价格&库存
VS-42CTQ030STRLHM3 数据手册
VS-42CTQ030SHM3, VS-42CTQ030-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation Base common cathode 2 Base common cathode 2 • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-42CTQ030SHM3 VS-42CTQ030-1HM3 PRODUCT SUMMARY • AEC-Q101 qualified meets JESD 201 class 1A whisker test • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION IF(AV) 2 x 20 A VR 30 V VF at IF 0.38 V IRM 183 mA at 125 °C TJ max. 150 °C EAS 13 mJ Package (D2PAK), Diode variation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C TO-263AB TO-262AA Common cathode This center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, freewheeling diodes, and reverse battery protection.      MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 40 A 30 V 1100 A 0.38 V -55 to 150 °C VS-42CTQ030SHM3 VS-42CTQ030-1HM3 UNITS 30 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM Revision: 21-Oct-14 Document Number: 94963 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-42CTQ030SHM3, VS-42CTQ030-1HM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average  forward current  See fig. 5 SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 121 °C, rectangular waveform per leg VALUES UNITS 20 per device 40 A Maximum peak one cycle non-repetitive  surge current per leg  See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 3 A, L = 2.90 mH 13 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3 A TEST CONDITIONS VALUES UNITS 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1100 360 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 20 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 40 A 20 A TJ = 125 °C 40 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold Voltage VF(TO) TJ = 25 °C VR = Rated VR TJ = 125 °C TJ =TJ maximum Forward slope resistance rt Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance per leg LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR 0.48 0.57 0.38 V 0.51 3 183 mA 0.22 V 6.76 m 2840 pF 8.0 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg 2.0 RthJC Maximum thermal resistance, junction to case per package DC operation 1.0 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased Mounting torque Marking device 0.50 2 Approximate weight °C/W g 0.07 oz. minimum 6 (5) kgf cm maximum 12 (10) (lbf in) Case style D2PAK 42CTQ030SH Case style TO-262 42CTQ030-1H Revision: 21-Oct-14 Document Number: 94963 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-42CTQ030SHM3, VS-42CTQ030-1HM3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 5 10 15 20 25 35 30 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM t1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 t2 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 21-Oct-14 Document Number: 94963 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-42CTQ030SHM3, VS-42CTQ030-1HM3 Vishay Semiconductors 16 150 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 140 DC 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 12 RMS limit 8 DC 4 See note (1) 0 100 0 5 10 15 20 25 0 30 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V Revision: 21-Oct-14 Document Number: 94963 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-42CTQ030SHM3, VS-42CTQ030-1HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 42 C T Q 030 S TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (40 A) 3 - Circuit configuration: C = Common cathode 4 - T = TO-220 5 - Schottky “Q” series 6 - Voltage rating (030 = 30 V) 7 - S = D2PAK -1 = TO-262 8 - None = Tube TRL = Tape and reel (left oriented - for D2PAK only) TRR = Tape and reel (right oriented - for D2PAK only) 9 - H = AEC-Q101 qualified 10 - M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-42CTQ030SHM3 50 1000 Antistatic plastic tubes VS-42CTQ030STRRHM3 800 800 13" diameter reel VS-42CTQ030STRLHM3 800 800 13" diameter reel VS-42CTQ030-1HM3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information TO-263AB (D2PAK) www.vishay.com/doc?95046 TO-262AA www.vishay.com/doc?95419 TO-263AB (D2PAK) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 www.vishay.com/doc?95032 Revision: 21-Oct-14 Document Number: 94963 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 4 2 0.100 BSC 13.46 14.10 0.530 0.555 L1 - L2 3.36 1.65 - 0.065 3.71 0.132 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) , D1 (minimum) and L2 where dimensions derived the actual package outline Revision: 11-Jul-2019 Document Number: 95419 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
VS-42CTQ030STRLHM3
物料型号:VS-42CTQ030SHM3 和 VS-42CTQ030-1HM3

器件简介:高性能肖特基整流器,具有非常低的正向电压降,适用于开关电源、自由轮流通路和防反电池保护等应用。


引脚分配:共阴极配置,有三个引脚,分别是两个阳极和一个共阴极。


参数特性: - 正向电流(IF(AV)):2x20A - 反向电压(VR):30V - 正向电压降(VF at IF):0.38V - 反向电流(IRM):183mA at 125°C - 最高结温(Tmax.):150°C - 雪崩能量(EAS):13 mJ - 封装类型:D2PAK (TO-263AB) 和 TO-262AA

功能详解:器件具有150°C的工作结温,中心抽头配置,极低的正向电压降,高频操作能力,增强的鲁棒性和长期可靠性。


应用信息:典型应用包括开关电源、自由轮流通路和防反电池保护。


封装信息:D2PAK (TO-263AB) 和 TO-262AA 封装,符合RoHS标准,无卤素。
VS-42CTQ030STRLHM3 价格&库存

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