VS-43CTQ100HN3
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
Base 2
common
cathode
TO-220AB
1
2
• 175 °C TJ operation
• Low forward voltage drop
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
3
Anode
Anode
2
1 Common 3
cathode
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified
PRODUCT SUMMARY
• Meets JESD 201 class 2 whisker test
Package
TO-220AB
IF(AV)
2 x 20 A
VR
100 V
VF at IF
0.67 V
IRM max.
11 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
7.50 mJ
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
Rectangular waveform
VRRM
VALUES
UNITS
40
A
100
V
IFSM
tp = 5 μs sine
850
A
VF
20 Apk, TJ = 125 °C (per leg)
0.67
V
TJ
Range
- 55 to 175
°C
VS-43CTQ100HN3
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
per leg
Maximum average forward current
See fig. 5
per device
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 135 °C, rectangular waveform
VALUES
UNITS
20
40
Following any rated
load condition and
with rated VRRM
applied
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
Repetitive avalanche current per leg
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
850
275
Revision: 05-Mar-14
Document Number: 94849
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ELECTRICAL SPECIFICATIONS
SYMBOL
PARAMETER
TEST CONDITIONS
20 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
40 A
20 A
TJ = 125 °C
40 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = TJ maximum
Forward slope resistance
rt
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Rated VR
VALUES
UNITS
0.81
0.98
V
0.67
0.81
1
11
mA
0.71
V
0.43
m
1480
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
- 55 to 175
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
SYMBOL
PARAMETER
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
2.0
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
1.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
°C/W
0.50
2
g
0.07
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Case style TO-220AB
43CTQ100H
Revision: 05-Mar-14
Document Number: 94849
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VS-43CTQ100HN3
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.2
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
20
40
80
60
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
0.1
0.01
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
0.1
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 05-Mar-14
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VS-43CTQ100HN3
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Vishay Semiconductors
20
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
DC
150
140
Square wave (D = 0.50)
80 % rated VR applied
130
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
15
RMS limit
10
DC
5
See note (1)
100
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
Revision: 05-Mar-14
Document Number: 94849
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-43CTQ100HN3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
43
C
T
Q
100
H
N3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (40 A)
3
-
Circuit configuration
C = Common cathode
-
4
Package
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage rating (100 = 100 V)
7
-
H = AEC-Q101 qualified
8
-
Environmental digit
N3 = Halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-43CTQ100HN3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?95222
TO-220AB-N3
www.vishay.com/doc?95028
www.vishay.com/doc?95065
Revision: 05-Mar-14
Document Number: 94849
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
(b, b2)
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
A1
1.14
1.40
0.045
0.055
NOTES
SYMBOL
MILLIMETERS
INCHES
NOTES
MIN.
MAX.
MIN.
MAX.
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
A2
2.56
2.92
0.101
0.115
E1
6.86
8.89
0.270
0.350
6
b
0.69
1.01
0.027
0.040
E2
-
0.76
-
0.030
7
b1
0.38
0.97
0.015
0.038
4
e
2.41
2.67
0.095
0.105
b2
1.20
1.73
0.047
0.068
e1
4.88
5.28
0.192
0.208
b3
1.14
1.73
0.045
0.068
4
H1
5.84
6.86
0.230
0.270
c
0.36
0.61
0.014
0.024
L
13.52
14.02
0.532
0.552
c1
0.36
0.56
0.014
0.022
4
L1
3.32
3.82
0.131
0.150
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
D1
8.38
9.02
0.330
0.355
Q
2.60
3.00
0.102
0.118
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package
outline
Revision: 06-Mar-2020
Document Number: 95222
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Revision: 01-Jan-2023
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