VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
2
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
1
1
3
D2PAK (TO-263AB)
2
TO-262AA
3
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
2
1 Common
3
Anode cathode Anode
VS-43CTQ...S-M3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1 Common
3
Anode cathode Anode
DESCRIPTION
VS-43CTQ...-1-M3
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, freewheeling diodes, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VR
80 V, 100 V
VF at IF
0.67 V
IRM max.
11 mA at 125 °C
TJ max.
175 °C
EAS
Package
Circuit configuration
7.50 mJ
D2PAK
(TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
20 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
UNITS
40
A
80/100
V
850
A
0.67
V
-55 to +175
°C
VS-43CTQ080S-M3
VS-43CTQ080-1-M3
VS-43CTQ100S-M3
VS-43CTQ100-1-M3
UNITS
80
100
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
Revision: 27-Oct-17
Document Number: 94942
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VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
TEST CONDITIONS
per leg
per device
VALUES
UNITS
20
IF(AV)
50 % duty cycle at TC = 135 °C, rectangular waveform
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
TEST CONDITIONS
VALUES
UNITS
Repetitive avalanche current per leg
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM applied
10 ms sine or 6 ms rect. pulse
850
275
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
40 A
20 A
TJ = 125 °C
40 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
Forward slope resistance
rt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = TJ maximum
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Rated VR
0.81
0.98
0.67
V
0.81
1
11
mA
0.71
V
0.43
m
1480
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
-55 to 175
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
TEST CONDITIONS
TJ, TStg
2.0
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
1.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Mounting torque
0.50
2
Approximate weight
°C/W
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf cm
(lbf in)
Case style D2PAK (TO-263AB)
Marking device
Case style TO-262AA
43CTQ080S
43CTQ100S
43CTQ080-1
43CTQ100-1
Revision: 27-Oct-17
Document Number: 94942
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VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
1
0.2
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
20
40
60
80
100
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 27-Oct-17
Document Number: 94942
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
Vishay Semiconductors
20
180
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
170
160
Average Power Loss (W)
Allowable Case Temperature (°C)
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DC
150
140
Square wave (D = 0.50)
80% rated VR applied
130
120
15
RMS limit
DC
10
5
110
See note (1)
0
100
0
5
10
15
20
25
0
30
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
(1)
Revision: 27-Oct-17
Document Number: 94942
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
43
C
T
Q
100
S
1
2
3
4
5
6
7
TRL -M3
8
1
-
Vishay Semiconductors product
2
-
Current rating (40 A)
3
-
Circuit configuration: C = common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage ratings
7
-
9
080 = 80 V
100 = 100 V
S = D2PAK (TO-263AB)
-1 = TO-262AA
8
-
None = tube
TRL = tape and reel (left oriented - for D2PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D2PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-43CTQ080S-M3
50
1000
Antistatic plastic tubes
VS-43CTQ080STRR-M3
800
800
13" diameter reel
VS-43CTQ080STRL-M3
800
800
13" diameter reel
VS-43CTQ080-1-M3
50
1000
Antistatic plastic tubes
VS-43CTQ100S-M3
50
1000
Antistatic plastic tubes
VS-43CTQ100STRR-M3
800
800
13" diameter reel
VS-43CTQ100STRL-M3
800
800
13" diameter reel
VS-43CTQ100-1-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
D2PAK
(TO-263AB)
www.vishay.com/doc?96164
TO-262AA
www.vishay.com/doc?96165
D2PAK (TO-263AB)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
Packaging information
www.vishay.com/doc?96424
SPICE model
www.vishay.com/doc?95065
Revision: 27-Oct-17
Document Number: 94942
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 01-Jan-2019
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Document Number: 91000