VS-43CTQ...SHM3, VS-43CTQ...-1HM3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
D2PAK
FEATURES
TO-262
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
Base
common
cathode
2
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Base
common
cathode
2
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
2
1 Common
3
Anode cathode Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
2
1 Common
3
Anode cathode Anode
• AEC-Q101 qualified meets JESD 201 class 1A whisker
test
VS-43CTQ...-1HM3
VS-43CTQ...SHM3
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION
IF(AV)
2 x 20 A
VR
80 V, 100 V
VF at IF
0.67 V
IRM max.
11 mA at 125 °C
TJ max.
175 °C
EAS
7.50 mJ
Package
Diode variation
TO-263AB
(D2
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, freewheeling diodes, and reverse battery
protection.
PAK), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VALUES
UNITS
40
A
80/100
V
IFSM
tp = 5 μs sine
850
A
VF
20 Apk, TJ = 125 °C (per leg)
0.67
V
TJ
Range
-55 to 175
°C
VS-43CTQ080SHM3
VS-43CTQ080-1HM3
VS-43CTQ100SHM3
VS-43CTQ100-1HM3
UNITS
80
100
V
VRRM
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
Revision: 06-Mar-14
Document Number: 94964
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
TEST CONDITIONS
per leg
per device
VALUES
UNITS
20
IF(AV)
50 % duty cycle at TC = 135 °C, rectangular waveform
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
TEST CONDITIONS
VALUES
UNITS
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
850
275
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
Maximum forward voltage drop per leg
See fig. 1
VFM
(1)
TJ = 25 °C
40 A
20 A
TJ = 125 °C
40 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = TJ maximum
Forward slope resistance
rt
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Rated VR
0.81
0.98
0.67
V
0.81
1
11
mA
0.71
V
0.43
m
1480
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
-55 to 175
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
TEST CONDITIONS
TJ, TStg
2.0
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
1.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
°C/W
0.50
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf cm
(lbf in)
Case style D2PAK
Marking device
Case style TO-262
43CTQ080SH
43CTQ100SH
43CTQ080-1H
43CTQ100-1H
Revision: 06-Mar-14
Document Number: 94964
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VS-43CTQ...SHM3, VS-43CTQ...-1HM3 Series
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
1
0.2
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 06-Mar-14
Document Number: 94964
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VS-43CTQ...SHM3, VS-43CTQ...-1HM3 Series
Vishay Semiconductors
20
180
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
170
160
Average Power Loss (W)
Allowable Case Temperature (°C)
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DC
150
140
Square wave (D = 0.50)
80% rated VR applied
130
120
15
RMS limit
DC
10
5
110
See note (1)
0
100
0
5
10
15
20
25
0
30
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
Revision: 06-Mar-14
Document Number: 94964
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-43CTQ...SHM3, VS-43CTQ...-1HM3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
43
C
T
Q
100
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (40 A)
3
-
Circuit configuration: C = Common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage ratings
7
-
S = D2PAK
8
-
None = Tube
080 = 80 V
100 = 100 V
-1 = TO-262
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
9
-
H = AEC-Q101 qualified
10
-
M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-43CTQ080SHM3
50
1000
Antistatic plastic tubes
VS-43CTQ080STRRHM3
800
800
13" diameter reel
VS-43CTQ080STRLHM3
800
800
13" diameter reel
VS-43CTQ080-1HM3
50
1000
Antistatic plastic tubes
VS-43CTQ100SHM3
50
1000
Antistatic plastic tubes
VS-43CTQ100STRRHM3
800
800
13" diameter reel
VS-43CTQ100STRLHM3
800
800
13" diameter reel
VS-43CTQ100-1HM3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-263AB (D2PAK)
www.vishay.com/doc?95046
TO-262AA
www.vishay.com/doc?95419
TO-263AB (D2PAK)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
Packaging information
www.vishay.com/doc?95032
SPICE model
www.vishay.com/doc?95065
Revision: 06-Mar-14
Document Number: 94964
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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Outline Dimensions
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Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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