VS-45EPF06LHM3, VS-45APF06LHM3
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 45 A
FEATURES
2
1
1
2
3
3
TO-247AD 2L
TO-247AD 3L
Base cathode
2
Base cathode
2
1
Cathode
3
Anode
VS-45EPF06LHM3
3
Anode
1
Anode
VS-45APF06LHM3
• Very low forward voltage drop
• Glass passivated pellet chip junction
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
• Flexible solution for reliable AC power
rectification
• High surge, low VF rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
PRIMARY CHARACTERISTICS
IF(AV)
45 A
VR
600 V
VF at IF
1.31 V
IFSM
550 A
trr
60 ns
TJ max.
150 °C
Package
TO-247AD 2L, TO-247AD 3L
Circuit configuration
Single
Snap factor
0.5
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage, and short reverse
recovery time.
These devices are intended for use in main rectification
(single or three phase bridge)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
45
A
VRRM
600
V
IFSM
550
A
VF
20 A, TJ = 25 °C
trr
1 A, 100 A /μs
TJ
1.09
V
60
ns
-40 to +150
°C
VOLTAGE RATINGS
PART NUMBER
VRSM, MAXIMUM
VRRM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
VS-45EPF06LHM3
600
700
VS-45APF06LHM3
600
700
IRRM
AT 150 °C
mA
8
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 108 °C, 180° conduction half sine wave
45
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine pulse, rated VRRM applied
462
10 ms sine pulse, no voltage reapplied
550
10 ms sine pulse, rated VRRM applied
1069
10 ms sine pulse, no voltage reapplied
1513
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
UNITS
A
A2s
A2s
15 125
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
45 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = rated VRRM
UNITS
1.31
V
4.4
m
1.1
V
0.1
mA
8
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 40 Apk
25 A/μs
25 °C
Typical
VALUES
UNITS
180
ns
3.2
A
0.5
μC
IFM
trr
ta
tb
dir
dt
t
Qrr
IRM(REC)
0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
unction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to +150
°C
0.4
°C/W
40
Mounting surface, smooth, and greased
0.25
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style TO-247AD 2L
45EPF06LH
Case style TO-247AD 3L
45APF06LH
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VS-45EPF06LHM3, VS-45APF06LHM3
150
RthJC (DC) = 0.40 °C/W
140
130
Conduction
angle
120
110
100
90
30°
90° 120°
60°
180°
80
0
10
20
30
40
50
Max. Average On-state Power Loss (W)
Vishay Semiconductors
100
180°
120°
90°
60°
30°
80
60
RMS limit
40
Conduction angle
20
TJ = 150 °C
0
0
40
50
60
70
80
Conduction angle
130
120
110
100
90
120°
60°
80
180°
90°
30°
DC
70
0
20
40
60
80
600
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
500
400
300
200
100
1
Average On-State Current (A)
50
40
RMS limit
30
Conduction angle
TJ = 150 °C
0
10
20
30
40
50
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Curent (A)
180°
120°
90°
60°
30°
10
100
Fig. 5 - Maximum Non-Repetitive Surge Current
80
20
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Max. Average On-state Power Loss (W)
30
Fig. 4 - Forward Power Loss Characteristics
140
0
20
Fig. 1 - Current Rating Characteristics
RthJC (DC) = 0.40 °C/W
60
10
Average On-state Current (A)
150
70
DC
Average On-State Current (A)
Peak Half Sine Wave Forward Current (A)
Max. Allowable Case Temperature (°C)
Max. Allowable Case Temperature (°C)
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650
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
550
450
350
250
150
50
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 22-Feb-18
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VS-45EPF06LHM3, VS-45APF06LHM3
Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
1
0
1
2
4
3
5
6
Instantaneous Forward Voltage (V)
Qrr - Typical Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
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225
IFM = 80 A
200
IFM = 40 A
175
150
IFM = 20 A
IFM = 10 A
125
100
IFM = 5 A
75
50
IFM = 1 A
TJ = 25 °C
25
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
TJ = 150 °C
0.6
0.4
0.2
0
0
40
80
120
160
200
IFM = 80 A
3
IFM = 40 A
2
IFM = 20 A
IFM = 10 A
1
IFM = 5 A
IFM = 1 A
0
0
40
80
160
120
200
dI/dt - Rate of Fall of Forward Current (A/µs)
10
TJ = 150 °C
IFM = 80 A
8
6
IFM = 40 A
4
IFM = 20 A
IFM = 10 A
2
IFM = 5 A
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Irr - Typical Reverse Recovery Current (A)
trr - Typical Reverse Recovery Time (ns)
Fig. 8 - Thermal Impedance ZthJC Characteristics
0.8
TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Qrr - Typical Reverse Recovery Charge (µC)
trr - Typical Reverse Recovery Time (ns)
Fig. 7 - Forward Voltage Drop Characteristics
4
25
TJ = 25 °C
20
IFM = 80 A
IFM = 40 A
15
IFM = 20 A
IFM = 10 A
10
IFM = 5 A
5
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 22-Feb-18
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VS-45EPF06LHM3, VS-45APF06LHM3
Irr - Typical Reverse Recovery Current (A)
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Vishay Semiconductors
50
TJ = 150 °C
40
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
30
20
10
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance
(°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
0.5
0.33
0.1
0.25
0.17
0.08
0.01
0.0001
Steady state value
(DC operation)
Single pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 22-Feb-18
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VS-45EPF06LHM3, VS-45APF06LHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
45
E
P
F
06
L
H
M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating (45 = 45 A)
3
-
Circuit configuration:
E = single, 2 pins
A = single, 3 pins
4
-
Package:
P = TO-247AD
5
-
Type of silicon:
F = fast recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
L = long leads
8
-
H = AEC-Q101 qualified
9
-
06 = 600 V
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-45EPF06LHM3
25
500
Antistatic plastic tubes
VS-45APF06LHM3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
www.vishay.com/doc?95536
TO-247AD 3L
www.vishay.com/doc?95626
TO-247AD 2L
www.vishay.com/doc?95648
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 22-Feb-18
Document Number: 96499
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Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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