VS-45EPS16LHM3, VS-45APS16LHM3
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Vishay Semiconductors
High Voltage Input Rectifier Diode, 45 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
2
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
1
1
2
TO-247AD 2L
TO-247AD 3L
• Flexible solution for reliable AC power
rectification
Base cathode
2
Base cathode
2
• High surge, low VF rugged blocking diode for DC charging
stations
3
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
Cathode
1
3
Anode
Anode
3
Anode
VS-45APS16LHM3
VS-45EPS16LHM3
PRIMARY CHARACTERISTICS
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
IF(AV)
45 A
VR
1600 V
VF at IF
1.16 V
IFSM
500 A
TJ max.
150 °C
Package
TO-247AD 2L, TO-247AD 3L
Circuit configuration
Single
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
45
A
VRRM
1600
V
IFSM
500
A
1.0
V
-40 to +150
°C
VF
20 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
VRSM, MAXIMUM
VRRM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
VS-45EPS16LHM3
1600
1700
VS-45APS16LHM3
1600
1700
IRRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 109 °C, 180° conduction half sine wave
45
10 ms sine pulse, rated VRRM applied
420
10 ms sine pulse, no voltage reapplied
500
10 ms sine pulse, rated VRRM applied
884
10 ms sine pulse, no voltage reapplied
1250
t = 0.1 ms to 10 ms, no voltage reapplied
12 500
UNITS
A
A2s
A2s
Revision: 22-Feb-18
Document Number: 96450
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-45EPS16LHM3, VS-45APS16LHM3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
45 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
V
7.6
m
0.72
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
1.16
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
Maximum thermal resistance, junction to ambient
RthJA
Typical thermal resistance, case to heatsink
RthCS
VALUES
UNITS
-40 to +150
°C
DC operation
0.40
Mounting surface, smooth, and greased
0.25
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
150
RthJC (DC) = 0.40 °C/W
140
130
120
110
100
120°
Conduction
angle
90
30°
60°
90°
180°
80
0
10
20
30
40
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Case style TO-247AD 2L
45EPS16LH
Case style TO-247AD 3L
45APS16LH
Max. Allowable Case Temperature (°C)
Max. Allowable Case Temperature (°C)
Marking device
Ø
°C/W
40
50
150
RthJC (DC) = 0.40 °C/W
140
Ø
130
Conduction angle
120
110
100
120°
60°
90
90°
30°
DC
180°
80
0
10
20
30
40
50
60
70
80
Average On - State Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 22-Feb-18
Document Number: 96450
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-45EPS16LHM3, VS-45APS16LHM3
Peak Half Sine Wave Forward Current (A)
Vishay Semiconductors
80
180°
120°
90°
60°
30°
70
60
50
RMS limit
40
Ø
30
Conduction angle
20
10
TJ = 150 °C
0
0
10
20
30
40
50
450
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
400
350
300
250
200
150
100
1
10
100
Average On-State Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Curent (A)
Max. Average On-state Power Loss (W)
Max. Average On- State Power Loss (W)
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90
180°
120°
90°
60°
30°
80
70
60
50
DC
RMS limit
40
30
Conduction Angle
20
10
Tj = 150 °C
0
0
10
20
30
40
50
60
70
80
500
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
450
400
350
300
250
200
150
100
50
0.01
0.1
Average On-state Current (A)
10
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Instantaneous Forward Current (A)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
100
TJ = 25 °C
10
TJ = 150 °C
VS-40EPS16
1
0.5
1.5
2.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 22-Feb-18
Document Number: 96450
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-45EPS16LHM3, VS-45APS16LHM3
ZthJC - Transient Thermal Impedance
(°C/W)
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Vishay Semiconductors
1
0.5
Steady state value
(DC operation)
0.33
0.1
0.25
0.17
0.08
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
45
E
P
S
16
L
H
M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating (45 = 45 A)
3
-
Circuit configuration:
E = single, 2 pins
A = single, 3 pins
4
-
Package:
P = TO-247AD
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
L = long leads
8
-
H = AEC-Q101 qualified
9
-
Environmental digit:
16 = 1600 V
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-45EPS16LHM3
25
500
Antistatic plastic tubes
VS-45APS16LHM3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
www.vishay.com/doc?95536
TO-247AD 3L
www.vishay.com/doc?95626
TO-247AD 2L
www.vishay.com/doc?95648
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 22-Feb-18
Document Number: 96450
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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