VS-47CTQ020-M3

VS-47CTQ020-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation Anode 3L TO-220AB Anode 2 1 Common 3 cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) • Guard ring for enhanced ruggedness and long term reliability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 x 20 A VR 20 V VF at IF 0.34 V IRM max. 310 mA at 125 °C TJ max. 150 °C EAS 18 mJ Package 3L TO-220AB Circuit configuration Common cathode DESCRIPTION This center tap Schottky rectifier has been optimized for ultralow forward voltage drop specifically for 3.3 V output power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C TJ VALUES UNITS 40 A 20 V 1000 A 0.34 V -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-47CTQ020-M3 UNITS 20 V ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per leg per device IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 135 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 20 40 1000 A Maximum peak one cycle non-repetitive  surge current per leg IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 3 A, L = 3 mH 18 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse 250 Revision: 14-Aug-17 Document Number: 96252 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 20 A TJ = 25 °C 40 A Maximum forward voltage drop per leg VFM (1) 20 A TJ = 125 °C 40 A 20 A TJ = 150 °C 40 A VR = 5 V TJ = 125 °C Maximum reverse leakage current per leg IRM (1) TJ = 150 °C TJ = 25 °C Forward slope resistance rt Maximum junction capacitance per leg CT Typical series inductance per leg LS Maximum voltage rate of change dV/dt UNITS 0.45 0.51 0.34 V 0.44 0.31 0.42 60 VR = 3.3 V 45 VR = 10 V 306 VR = Rated VR TJ = 125 °C VF(TO) Threshold voltage VALUES mA 3 310 TJ = TJ maximum 0.188 V 5.9 m VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 3000 pF Measured lead to lead 5 mm from package body Rated VR 5.5 nH 10 000 V/μs VALUES UNITS - 55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case per leg 1.5 RthJC Maximum thermal resistance,  junction to case per package DC operation 0.75 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth, and greased Marking device 0.50 2 Approximate weight Mounting torque °C/W g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Case style 3L TO-220AB 47CTQ020 Revision: 14-Aug-17 Document Number: 96252 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020-M3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 TJ = 75 °C TJ = 50 °C 1 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.2 1.0 0 1.4 4 8 12 16 20 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 2 4 6 8 10 12 14 16 18 20 22 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 14-Aug-17 Document Number: 96252 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020-M3 Vishay Semiconductors 160 12 150 10 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 140 Square wave (D = 0.50) 10 V applied 130 120 110 100 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 6 RMS limit 4 DC 2 See note (1) 0 90 0 5 10 15 20 5 0 30 25 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V (1) Revision: 14-Aug-17 Document Number: 96252 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-47CTQ020-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 47 C T Q 020 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (40 A) 3 - Circuit configuration C = common cathode 4 - Package T = TO-220 5 - Schottky “Q” series 6 - Voltage rating (020 = 20 V) 7 - Environmental digit -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-47CTQ020-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 14-Aug-17 Document Number: 96252 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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