VS-4CSH02HM3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 2 A FRED Pt®
FEATURES
eSMP® Series
• Hyperfast recovery time, reduced Qrr, and
soft recovery
• 175 °C maximum operating junction
temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
K
Anode 1
Cathode
Anode 2
1
2
SMPC (TO-277A)
LINKS TO ADDITIONAL RESOURCES
DESCRIPTION / APPLICATIONS
3D 3D
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
3D Models
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
PRIMARY CHARACTERISTICS
IF(AV)
2x2A
VR
200 V
VF at IF
0.75 V
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
trr (typ.)
24 ns
TJ max.
175 °C
Package
SMPC (TO-277A)
Circuit configuration
Common cathode
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS compliant
Terminals:
J-STD-002
matte
tin
plated
leads,
solderable
per
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
TEST CONDITIONS
VALUES
UNITS
200
V
VRRM
per device
per diode
per device
per diode
Operating junction and storage temperatures
IF(AV)
IFSM
4
TSp = 165 °C
2
TJ = 25 °C
TJ, TStg
A
90
50
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage, per diode
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 2 A
-
0.88
0.95
IF = 2 A, TJ = 125 °C
-
0.75
0.82
IR = 100 μA
VR = VR rated
-
-
2
TJ = 125 °C, VR = VR rated
-
1
8
VR = 200 V
-
8
-
UNITS
V
μA
pF
Revision: 13-Jan-2021
Document Number: 94973
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
24
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
25
TJ = 25 °C
-
16
-
TJ = 125 °C
UNITS
ns
-
22
-
-
2
-
-
3
-
TJ = 25 °C
-
16
-
TJ = 125 °C
-
30
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
RthJM
-
4.5
5.5
°C/W
Peak recovery current
IRRM
Reverse recovery charge
IF = 2 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 25 °C
TJ = 125 °C
Qrr
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance, junction to mount, per
diode
TEST CONDITIONS
Approximate weight
Case style SMPC (TO-277A)
100
g
oz.
JCH2
100
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
0.1
0.0035
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
175 °C
10
1
150 °C
125 °C
0.1
0.01
25 °C
0.001
TJ = -40 °C
0.1
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 13-Jan-2021
Document Number: 94973
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3
RMS limit
Average Power Loss (W)
CT - Junction Capacitance (pF)
100
10
2.5
2
1
0.5
0
1
0
50
100
150
0
200
0.5
1
1.5
2
2.5
3
3.5
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
180
35
30
175
25
DC
170
165
125 °C
20
trr (ns)
Allowable Case Temperature (°C)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1.5
15
25 °C
Square wave (D = 0.50)
80 % rated VR applied
10
160
IF = 2 A
5
See note (1)
155
0
0
0.5
1
1.5
2
2.5
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
45
40
125 °C
Qrr (nC)
35
30
25
25 °C
20
15
IF = 2 A
10
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 13-Jan-2021
Document Number: 94973
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-4CSH02HM3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
4
C
S
H
02
H
M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (4 = 4 A)
3
-
Circuit configuration:
C = common cathode
4
-
S = SMPC package
5
-
Process type,
H = hyper fast recovery
6
-
Voltage code (02 = 200 V)
7
-
H = AEC-Q101 qualified
8
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-4CSH02HM3/86A
1500
1500
7" diameter plastic tape and reel
VS-4CSH02HM3/87A
6500
6500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95570
Part marking information
www.vishay.com/doc?95565
Packaging information
www.vishay.com/doc?88869
Revision: 13-Jan-2021
Document Number: 94973
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SMPC (TO-277A)
DIMENSIONS in inches (millimeters)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 16-Feb-2022
Document Number: 95570
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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