VS-4EGU06-M3
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Vishay Semiconductors
Ultrafast Rectifier, 4 A FRED Pt®
FEATURES
Cathode
• Ultrafast recovery time, reduced Qrr and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
SMB (DO-214AA)
LINKS TO ADDITIONAL RESOURCES
DESCRIPTION / APPLICATIONS
3D 3D
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop, ultrafast
recovery time, and fast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
4A
VR
600 V
VF at IF
0.94 V
trr typ.
45 ns
TJ max.
175 °C
Package
SMB (DO-214AA)
Circuit configuration
Single
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes the cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TL = 103 °C (1)
Non-repetitive peak surge current
IFSM
TJ = 25 °C, 6 ms square pulse
Operating junction and storage temperatures
TJ, TStg
VALUES
UNITS
600
V
4
A
100
-55 to +175
°C
Note
(1) Mounted on PCB with minimum pad size
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
600
-
-
IF = 4 A
-
1.12
1.3
IF = 4 A, TJ = 150 °C
-
0.94
1.15
VR = VR rated
-
-
3
TJ = 150 °C, VR = VR rated
-
-
100
VR = 600 V
-
6.8
-
UNITS
V
μA
pF
Revision: 17-Mar-2021
Document Number: 94774
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-4EGU06-M3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
trr
Peak recovery current
TYP.
MAX.
-
45
-
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
50
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
65
TJ = 25 °C
-
39
-
TJ = 125 °C
-
61
-
IF = 4 A
dIF/dt = 200 A/μs
VR = 390 V
TJ = 25 °C
IRRM
Reverse recovery charge
MIN.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 125 °C
Qrr
-
5.8
-
-
7.7
-
UNITS
ns
A
TJ = 25 °C
-
119
-
TJ = 125 °C
-
251
-
MIN.
TYP.
MAX.
UNITS
-55
-
+175
°C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature
range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction to mount
RthJM
(1)
-
-
18
Thermal resistance, junction to ambient
RthJA (1)
-
-
90
Approximate Weight
Marking device
°C/W
0.1
g
0.003
oz.
Case style SMB (DO-214AA)
4U6
100
100
175 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Note
(1) Mounted on PCB with minimum pad size
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
TJ = -40 °C
0.1
10
150 °C
125 °C
1
0.1
25 °C
0.01
0.001
0.0001
0
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 17-Mar-2021
Document Number: 94774
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-4EGU06-M3
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Vishay Semiconductors
6
RMS Limit
5
Average Power Loss (W)
CT - Junction Capacitance (pF)
100
10
4
2
1
1
0
0
100
200
300
400
500
600
0
1
2
3
4
5
6
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
200
100
180
90
160
80
140
70
trr (ns)
Allowable Case Temperature (°C)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
3
DC
120
100
50
80
40
60
30
40
0
1
2
3
4
IF = 4 A, 25 °C
typical value
20
100
6
5
IF = 4 A, 125 °C
60
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
400
350
IF = 4 A, 125 °C
Qrr (nC)
300
250
IF = 4 A, 25 °C
200
150
100
typical value
50
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Revision: 17-Mar-2021
Document Number: 94774
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-4EGU06-M3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
4
E
G
U
06
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (4 = 4 A)
3
-
Circuit configuration:
E = single diode
4
-
G = SMB package
5
-
Process type,
U = ultrafast recovery
6
-
Voltage code (06 = 600 V)
7
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-4EGU06-M3/5BT
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5BT
3200
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95401
Part marking information
www.vishay.com/doc?95472
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?96770
Revision: 17-Mar-2021
Document Number: 94774
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMB
DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 95401
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000