VS-4EVH01-M3/I

VS-4EVH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt® FEATURES eSMP® Series • Hyperfast recovery time Heatsink k • 175 °C max. operating junction temperature • Low forward voltage drop reduced Qrr and soft recovery k • Low leakage current 1 • Very low profile - typical height of 1.3 mm 2 1 Pin 1 2 Pin 2 • Ideal for automated placement SlimDPAK (TO-252AE) • Polyimide passivation for high reliability standard • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C LINKS TO ADDITIONAL RESOURCES • Meets JESD 201 class 2 whisker test 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D Models DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 4A VR 100 V VF at IF 0.71 V trr (typ.) 16 ns TJ max. 175 °C Package SlimDPAK (TO-252AE) Circuit configuration Single State of the art hyper fast recovery rectifiers with optimized performance of forward voltage drop and hyper fast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters, or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 167 °C Non-repetitive peak surge current IFSM TJ = 25 °C, 10 ms sine pulse wave Operating junction and storage temperatures TJ, TStg VALUES UNITS 100 V 4 A 100 -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 4 A - 0.88 1.0 0.80 IR = 100 μA IF = 4 A, TJ = 150 °C - 0.71 VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 80 VR = 100 V - 17 - UNITS V μA pF Revision: 11-Jan-2021 Document Number: 96100 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EVH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 16 - IF = 0.5 A, IR = 1 A, IRR = 0.25 A - - 25 TJ = 25 °C - 20 - - 30 - - 2.5 - - 4 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr IF = 4 A dIF/dt = 200 A/μs VR = 160 V TJ = 25 °C TJ = 125 °C UNITS ns A TJ = 25 °C - 25 - TJ = 125 °C - 60 - MIN. TYP. MAX. UNITS -55 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to ambient TEST CONDITIONS TJ, TStg RthJA (1)(2) RthJM (3) Thermal resistance, junction to mount Marking device - 73 90 °C/W - 2.1 2.5 °C/W Case style SlimDPAK (TO-252AE) 4EVH01 100 100 175 °C 10 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Notes (1) The heat generated must be less than thermal conductivity from junction to ambient; dP /dT < 1R D J thJA (2) Free air, mounted or recommended copper pad area; thermal resistance R thJA - junction to ambient (3) Mounted on infinite heatsink TJ = 175 °C TJ = -40 °C 1 TJ = 150 °C TJ = 125 °C 10 150 °C 125 °C 1 100 °C 0.1 75 °C 0.01 50 °C 0.001 25 °C TJ = 25 °C 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Jan-2021 Document Number: 96100 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EVH01-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 0 25 50 75 100 125 150 175 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 100 RthJA 10 RthJC 1 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 5 RthJC = 2.1 °C/W 180 4.5 Average Power Loss (W) Allowable Case Temperature (°C) 200 160 140 120 RthJA = 73 °C/W 100 80 60 40 DC 20 RMS limit 4 3.5 3 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 2.5 2 1.5 1 0.5 See note (1) 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 1 2 3 4 5 6 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 11-Jan-2021 Document Number: 96100 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EVH01-M3 www.vishay.com Vishay Semiconductors 120 45 40 100 35 125 °C Qrr (nC) trr (ns) 125 °C 80 30 25 25 °C 20 60 25 °C 40 15 20 10 5 0 100 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 11-Jan-2021 Document Number: 96100 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EVH01-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 4 E V H 01 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (4 = 4 A) 3 - Circuit configuration: E = single die 4 - V = SlimDPAK 5 - Process type: H = hyper fast recovery 6 - Voltage code (01 = 100 V) 7 - Environmental digit: -M3 = halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-4EVH01-M3/I 4500 4500 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96081 Part marking information www.vishay.com/doc?96085 Packaging information www.vishay.com/doc?88869 Revision: 11-Jan-2021 Document Number: 96100 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SlimDPAK DIMENSIONS in inches (millimeters) SlimDPAK 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 14-Mar-17 Document Number: 96081 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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