VS-4EWH02FNHM3

VS-4EWH02FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt® FEATURES • Hyperfast recovery time 2, 4 • 175 °C max. operating junction temperature • Output rectification freewheeling 1 N/C • Low forward voltage drop reduced Qrr and soft recovery 3 Anode • Low leakage current DPAK (TO-252AA) • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 4A VR 200 V VF at IF 0.71 V DESCRIPTION / APPLICATIONS trr (typ.) 23 ns TJ max. 175 °C Package DPAK (TO-252AA) Circuit configuration Single State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 164 °C 4 Non-repetitive peak surge current IFSM TJ = 25 °C 80 Peak repetitive forward current IFM TC = 164 °C, f = 20 kHz, d = 50 % 8 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 4 A - 0.87 0.95 IR = 100 μA IF = 4 A, TJ = 150 °C - 0.71 0.80 VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - 2 20 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 19-Feb-2021 Document Number: 94766 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EWH02FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 23 - IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 24 - TJ = 25 °C - 20 - - 27 - - 2 - - 3.4 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 4 A dIF/dt = 200 A/μs VR = 160 V UNITS ns A - 20 - - 46 - MIN. TYP. MAX. UNITS - 175 °C 2.7 3.2 °C/W TJ = 125 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -65 Thermal resistance, junction to case per leg RthJC - Approximate weight Case style DPAK (TO-252AA) g 0.01 oz. 4EWH02FNH 100 100 Tj = 175°C Reverse Current - I R (μA) IF - Instantaneous Forward Current (A) Marking device 0.3 Tj = 175 °C 10 1 Tj = 125 °C Tj = 25 °C 0.1 0.2 10 Tj = 150°C Tj = 125°C 1 Tj = 100°C 0.1 Tj = 75°C 0.01 Tj = 50°C 0.001 Tj = 25°C 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Feb-2021 Document Number: 94766 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EWH02FNHM3 www.vishay.com Vishay Semiconductors Junction Capacitance - C T (pF) 100 10 0 50 100 150 200 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 10 D = 0.5 1 D = 02 D = 0.1 D = 0.05 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 5 175 170 Average Power Loss ( Watts ) Allowable Case Temperature (°C) 180 DC 165 Square wave (D=0.50) rated Vr applied 160 155 see note (1) 4.5 RMS Limit 4 3.5 3 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 2.5 2 1.5 1 DC 0.5 150 0 1 2 3 4 5 Average Forward Current - IF(AV) (A) 6 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 0 1 2 3 4 5 6 Average Forward Current - IF(AV)(A) Fig. 6 - Forward Power Loss Characteristics Revision: 19-Feb-2021 Document Number: 94766 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EWH02FNHM3 www.vishay.com Vishay Semiconductors 40 35 4 A, Tj = 125 °C 50 30 Qrr (nC) trr (nC) 4 A, Tj = 125 °C 25 20 15 4 A, Tj = 25 °C 4 A, Tj = 25 °C 10 5 0 100 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 19-Feb-2021 Document Number: 94766 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EWH02FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 4 E W H 02 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (4 = 4 A) 3 - Circuit configuration: E = single diode 4 - Package identifier: W = DPAK 5 - H = hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - FN = TO-252AA 8 - None = tube TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - H = AEC-Q101 qualified 10 - Environmental digit: M3 = halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-4EWH02FNHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION Antistatic plastic tube 75 3000 VS-4EWH02FNTRHM3 2000 2000 13" diameter reel VS-4EWH02FNTRLHM3 3000 3000 13" diameter reel VS-4EWH02FNTRRHM3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95381 Revision: 19-Feb-2021 Document Number: 94766 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DPAK (TO-252AA) DIMENSIONS in millimeters and inches Pad layout E A 0.265 (6.74) min. b3 E1 c2 L3 4 4 Seating plane D 1 2 L5 0.245 (6.23) min. H L4 3 D1 3 1 2 0.488 (12.40) 0.409 (10.40) Detail “C” b2 0.089 (2.28) min. c b e L1 e1 Lead tip 0.06 (1.524) min. Detail “C” Gauge plane L2 0.093 (2.38) 0.085 (2.18) A1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 3 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 5 D1 5.21 - 0.205 - 3 E 6.35 6.73 0.250 0.265 5 E1 4.32 - 0.170 - 3 2.74 BSC L2 L3 c2 2.29 BSC INCHES MIN. 0.51 BSC 0.89 1.27 NOTES 0.090 BSC 0.108 REF. 0.020 BSC 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (5) Outline conforms to JEDEC® outline TO-252AA Revision: 06-Jun-17 Document Number: 95519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000