VS-50PF(R)...(W) High Voltage Series
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Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
FEATURES
50PF(R)...
50PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
DO-5 (DO-203AB)
DO-5 (DO-203AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
50 A
Package
DO-5 (DO-203AB)
Circuit configuration
Single
• Machine tool controls
• Welding
• Any high voltage input rectification bridge
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IF(RMS)
IFSM
I2t
VRRM
VALUES
UNITS
50
A
128
°C
78
A
50 Hz
570
60 Hz
595
A
50 Hz
1600
60 Hz
1450
Range
1400 to 1600
V
-55 to +160
°C
TJ
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-50PF(R)...(W)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
140
1400
1650
160
1600
1900
IRRM MAXIMUM
AT TJ = 150 °C
mA
4.5
Revision: 11-Jan-18
Document Number: 93517
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VS-50PF(R)...(W) High Voltage Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS forward current
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum
I2t
I2t
for fusing
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Low level value of threshold voltage
UNITS
50
A
128
°C
78
A
No voltage
reapplied
570
100 % VRRM
reapplied
480
No voltage
reapplied
595
Sinusoidal half wave,
initial TJ = 150 °C
A
500
1600
1450
A2s
1150
100 % VRRM
reapplied
1050
t = 0.1 ms to 10 ms, no voltage reapplied
A2s
16 000
VF(TO)
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.77
V
rf
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
4.30
m
VFM
Ipk = 125 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.50
V
Low level value of forward slope resistance
Maximum forward voltage drop
VALUES
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
TJ, TStg
VALUES
UNITS
-55 to 160
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.51
Thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
Not lubricated thread, tighting on nut (1)
3.4
(30)
Lubricated thread, tighting on nut (1)
2.3
(20)
Not lubricated thread, tighting on hexagon (2)
4.2
(37)
Lubricated thread, tighting on hexagon (2)
3.2
(28)
Maximum allowable
mounting torque
(+0 %, -10 %)
K/W
Approximate weight
Case style
N·m
(lbf · in)
15.8
g
0.56
oz.
See dimensions - link at the end of datasheet
DO-5 (DO-203AB)
Notes
(1) Recommended for pass-through holes
(2) Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.11
0.10
120°
0.16
0.16
90°
0.20
0.22
60°
0.29
0.31
30°
0.49
0.50
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93517
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50PF(R)...(W) High Voltage Series
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Vishay Semiconductors
600
50PF(R) Series
140 to 160
RthJC = 0.51K/W
160
150
140
180˚ Sine
130
120
110
100
0
20
30
40
50
400
350
300
250
200
50PF(R) Series
40HF(R)
140 to 160Series
150
100
0.01
60
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
550
Peak Half Sine Wave Forward Current (A)
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
500
No Voltage Reapplied
Rated Vrrm Reapplied
450
550
Peak Half Sine Wave Forward Current (A)
170
1000
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
500
450
400
Instantaneous Forward Current (A)
Maximum Allowable Case Temperature (°C)
180
350
300
250
200
50PF(R) Series
140 to 160
150
Tj = Tj Max
100
Tj = 25˚C
10
50PF(R)
40HF
(R)Series
Series
140 to 160
100
1
10
1
100
0
Fig. 2 - Maximum Non-Repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Forward Voltage Drop Characteristics
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
0.1
50PF(R)Series
Series
50PF(R)
140 to 160
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 5 - Thermal Impedance ZthJC Characteristics
Revision: 11-Jan-18
Document Number: 93517
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50PF(R)...(W) High Voltage Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
50
PF
R
160
W
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
50 = standard device
3
-
PF = plastic package
4
-
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5
-
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = standard terminal
(see dimensions for 50PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 50PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 11-Jan-18
Document Number: 93517
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W),
and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R), AND 95PF(R) SERIES in millimeters
6.45 MIN.
Ø3
4.2 MAX.
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
Document Number: 95345
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS FOR 80PF(R)...(W), 50PF(R)...(W), AND 95PF(R)...(W) SERIES in millimeters
2.05 MAX.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"-28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
Document Number: 95345
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS FOR 52PF(R), 82PF(R), AND 97PF(R) SERIES in millimeters
11.20 - 12.20
Ø 6.80 - 7.00
6.6 mm2 external lead with
blue or red sleeve insulation
115.00 - 123.00
127.40 - 134.40
Plastic cap.
11.05 - 11.45
2.4 REF.
10.60 - 11.40
1/4"-28-UNF-2A
Revision: 20-Apr-16
Document Number: 95345
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000