VS-50PF(R)...(W) Series
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Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
FEATURES
50PF(R)...
50PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
DO-5 (DO-203AB)
DO-5 (DO-203AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
PRIMARY CHARACTERISTICS
• Converters
IF(AV)
50 A
Package
DO-5 (DO-203AB)
Circuit configuration
Single
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
I2t
VRRM
UNITS
50
A
TC
140
°C
78
A
50 Hz
800
60 Hz
830
IF(RMS)
IFSM
VALUES
A
50 Hz
3200
60 Hz
2900
Range
400 to 1200
V
-55 to +180
°C
TJ
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-50PF(R)...(W)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
40
400
500
80
800
960
120
1200
1440
IRRM MAXIMUM
AT TJ = 150 °C
mA
9
Revision: 11-Jan-18
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VS-50PF(R)...(W) Series
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I2t
Maximum
I2t
for fusing
t = 8.3 ms
I2t
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
A
140
°C
78
A
800
100 % VRRM
reapplied
670
830
Sinusoidal half wave,
initial TJ = 150 °C
A
700
3200
2900
A2s
100 % VRRM
reapplied
2050
t = 0.1 ms to 10 ms, no voltage reapplied
32 000
A2s
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
UNITS
50
No voltage
reapplied
No voltage
reapplied
t = 10 ms
VALUES
2260
VF(TO)
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.77
V
rf
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
4.30
m
VFM
Ipk = 125 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.40
V
VALUES
UNITS
-55 to +180
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.51
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
K/W
Allowable mounting torque
Tighting on nut (1)
Not lubricated threads
3.4 + 0 - 10 %
(30)
Tighting on hexagon (2)
lubricated threads
2.3 + 0 - 10 %
(20)
Approximate weight
Case style
See dimensions - link at the end of datasheet
N·m
(lbf · in)
15.8
g
0.56
oz.
DO-5 (DO-203AB)
Notes
(1) As general recommendation we suggest to tight on Hexagon and not on nut
(2) Torque must be applicable only to Hexagon and not to plastic structure
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.11
0.10
120°
0.16
0.16
90°
0.20
0.22
60°
0.29
0.31
30°
0.49
0.50
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93516
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50PF(R)...(W) Series
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
180
50PF(R) Serie
RthJC = 0.51 K/W
170
160
Conduction Angle
150
140
180°
120°
130
90°
120
30°
60°
110
0
10
20
30
40
50
60
180
50PF(R) Series
RthJC (DC) = 0.51 K/W
170
160
Conduction Period
150
30°
140
60°
90°
130
120°
180°
DC
120
0
10 20
30
40 50
60 70
80
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
100
180°
80
120°
90°
60°
60
30°
1
1.5
K/
W
2K
/W
3K
RMS Limit
40
K/
W
K/W
0.7
Maximum Allowable Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
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5K
/W
/W
Conduction Angle 7 K
/W
20
50PF(R) Series
Tj = 180°C
10 K/W
0
0
10
20
30
40
50
Average Forward Current (A)
0
60
30
60
90
120
150
180
Maximum Allowable Ambient Temperature (°C)
100
180°
120°
90°
80
1
1.5
K/
W
60°
30°
60
3K
5K
Conduction Period
20
50PF(R) Series
Tj = 180°C
W
2K
/W
DC
RMS Limit
40
K/
K/W
0.7
Maximum Allowable Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
7K
/W
/W
/W
10 K/W
0
0
20
40
60
Average Forward Current (A)
0
80
30
60
90
120
150
180
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
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VS-50PF(R)...(W) Series
Vishay Semiconductors
1000
800
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
700
Initial Tj = 150°C
@ 60 Hz 0.0083 s
600
@ 50 Hz 0.0100 s
500
400
300
50PF(R) Series
Instantaneous Forward Current (A)
Peak Haf Sine Wave Forward Current (A)
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100
10
50PF(R) Series
1
200
1
10
0
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
800
Initial Tj = 150°C
700
No Voltage Reapplied
Rated Vrrm Reapplied
600
500
400
300
50PF(R) Series
100
0.01
0.1
1
2
3
4
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (K/W)
Peak Haf Sine Wave Forward Current (A)
900
1
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
200
Tj = 25°C
Tj = 180°C
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
0.1
50PF(R) Series
0.01
0.0001 0.001
0.01
0.1
1
10
Pulse Train Duration (s)
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 11-Jan-18
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VS-50PF(R)...(W) Series
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ORDERING INFORMATION TABLE
Device code
VS-
50
PF
R
120
W
1
2
3
4
5
6
1
-
2
-
Vishay Semiconductors product
50 = standard device
52 = isolated lead on standard terminal
with silicone sleeve available for 1200 V only
(red = reverse polarity)
(blue = normal polarity)
3
-
4
-
PF = plastic package
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5
-
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = standard terminal
(see dimensions for 50PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 50PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 11-Jan-18
Document Number: 93516
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W),
and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R), AND 95PF(R) SERIES in millimeters
6.45 MIN.
Ø3
4.2 MAX.
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
Document Number: 95345
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS FOR 80PF(R)...(W), 50PF(R)...(W), AND 95PF(R)...(W) SERIES in millimeters
2.05 MAX.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"-28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
Document Number: 95345
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Outline Dimensions
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Vishay Semiconductors
DIMENSIONS FOR 52PF(R), 82PF(R), AND 97PF(R) SERIES in millimeters
11.20 - 12.20
Ø 6.80 - 7.00
6.6 mm2 external lead with
blue or red sleeve insulation
115.00 - 123.00
127.40 - 134.40
Plastic cap.
11.05 - 11.45
2.4 REF.
10.60 - 11.40
1/4"-28-UNF-2A
Revision: 20-Apr-16
Document Number: 95345
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Revision: 01-Jan-2022
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Document Number: 91000