VS-50RIA Series
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Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
•
•
•
•
•
•
•
•
TO-65 (TO-208AC)
PRIMARY CHARACTERISTICS
IT(AV)
50 A
VDRM/VRRM
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
VTM
1.60 V
IGT
100 mA
TJ
-40 °C to 125 °C
Package
TO-65 (TO-208AC)
Circuit configuration
Single SCR
High current rating
Excellent dynamic characteristics
dV/dt = 1000 V/μs option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1200 V VDRM/VRRM
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
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Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and speed
control circuit
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
ITSM
I2t
A
94
°C
80
A
1430
60 Hz
1490
50 Hz
10.18
60 Hz
9.30
Typical
TJ
UNITS
50
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
100 to 1200
V
110
μs
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-50RIA
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE (1)
V
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE (2)
TJ = TJ MAXIMUM
mA
V
10
100
150
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
15
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with t 5 ms
p
Revision: 21-Sep-17
Document Number: 93711
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
TEST CONDITIONS
180° sinusoidal conduction
IT(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
I2t
for fusing
VALUES
UNITS
50
A
94
°C
80
A
No voltage
reapplied
1430
100 % VRRM
reapplied
1200
No voltage
reapplied
1490
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
A
1255
10.18
9.30
7.20
kA2s
6.56
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
101.8
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.94
High level value of threshold voltage
VT(TO)2
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum
1.08
Low level value of on-state
slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
4.08
High level value of on-state
slope resistance
rt2
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum
3.34
Maximum on-state voltage
VTM
Ipk = 157 A, TJ = 25 °C
1.60
Maximum holding current
IH
TJ = 25 °C, anode supply 22 V, resistive load,
initial IT = 2 A
200
Latching current
IL
Anode supply 6 V, resistive load
400
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum rate of
rise of turned-on current
SYMBOL
VDRM 600 V
VDRM 1600 V
dI/dt
TEST CONDITIONS
TC = 125 °C, VDM = Rated VDRM,
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
VALUES
UNITS
200
A/μs
100
Typical delay time
td
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit
Gate pulse = 10 V, 15 source, tp = 20 μs
0.9
Typical turn-off time
tq
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/μs
dIr/dt = - 10 A/μs, VR = 50 V
110
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
VALUES
TJ = TJ maximum linear to 100 % rated VDRM
200
TJ = TJ maximum linear to 67 % rated VDRM
500 (1)
UNITS
V/μs
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
Revision: 21-Sep-17
Document Number: 93711
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
TEST CONDITIONS
VALUES
TJ = TJ maximum, tp 5 ms
10
W
PG(AV)
2.5
Maximum peak positive gate current
IGM
2.5
Maximum peak positive gate voltage
+VGM
20
Maximum peak negative gate voltage
-VGM
10
IGT
250
TJ = 25 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
TJ = 125 °C
DC gate voltage required to trigger
VGT
A
V
TJ = - 40 °C
DC gate current required to trigger
UNITS
TJ = - 40 °C
100
mA
50
3.5
V
TJ = 25 °C
2.5
DC gate current not to trigger
IGD
TJ = TJ maximum,
VDRM = Rated voltage
DC gate voltage not to trigger
VGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
5.0
mA
0.2
V
VALUES
UNITS
-40 to +125
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.35
Maximum thermal resistance,
case to heat sink
RthCS
Mounting surface, smooth, flat and greased
0.25
K/W
Non-lubricated threads
3.4 + 0 - 10 %
(30)
Lubricated threads
2.3 + 0 - 10 %
(20)
Allowable mounting torque
Approximate weight
Case style
See dimensions - link at the end of datasheet
N·m
(lbf · in)
28
g
1.0
oz.
TO-65 (TO-208AC)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.078
0.057
120°
0.094
0.098
90°
0.120
0.130
60°
0.176
0.183
30°
0.294
0.296
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93711
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
130
Vishay Semiconductors
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
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50RIA Series
RthJC (DC) = 0.35 K/W
120
Conduction Angle
110
30°
60°
90°
100
120°
180°
90
0
10
20
30
40
50
100
DC
180°
120°
90°
60°
30°
90
80
70
60
50
RMS Limit
40
30
Conduction Period
20
50RIA Series
TJ = 125°C
10
0
0
60
10
130
1300
50RIA Series
RthJC (DC) = 0.35 K/W
120
Conduction Period
100
90°
60°
120°
30°
180°
DC
80
0
10
20
30
40
50
60
70
80
50
RMS Limit
30
Conduction Angle
50RIA Series
TJ = 125°C
10
0
0
10
20
30
80
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 125°C
1100
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
50RIA Series
600
1500
180°
120°
90°
60°
30°
20
70
40
10
100
Fig. 5 - Maximum Non-Repetitive Surge Current
80
40
60
1200
1
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Ratings Characteristics
60
50
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
70
40
Fig. 4 - On-State Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Ratings Characteristics
90
30
Average On-state Current (A)
Average On-state Current (A)
110
20
50
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
1400
1300
1200
1100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
1000
900
800
700
600
500
0.01
50RIA Series
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 21-Sep-17
Document Number: 93711
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
Instantaneous On-state Current (A)
1000
100
TJ = 25°C
TJ = 125°C
10
50RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance ZthJ-hs (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value
RthJ-hs = 0.35 K/W
0.1
50RIA Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr