VS-50RIA80M

VS-50RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 50 A FEATURES • • • • • • • • TO-65 (TO-208AC) PRIMARY CHARACTERISTICS IT(AV) 50 A VDRM/VRRM 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V, 1200 V VTM 1.60 V IGT 100 mA TJ -40 °C to 125 °C Package TO-65 (TO-208AC) Circuit configuration Single SCR High current rating Excellent dynamic characteristics dV/dt = 1000 V/μs option Superior surge capabilities Standard package Metric threads version available Types up to 1200 V VDRM/VRRM Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • • • • Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit  MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) ITSM I2t A 94 °C 80 A 1430 60 Hz 1490 50 Hz 10.18 60 Hz 9.30 Typical TJ UNITS 50 50 Hz VDRM/VRRM tq VALUES A kA2s 100 to 1200 V 110 μs -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-50RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM IDRM/IRRM MAXIMUM AT NON-REPETITIVE PEAK VOLTAGE (2) TJ = TJ MAXIMUM mA V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 15 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs (2) For voltage pulses with t  5 ms p Revision: 21-Sep-17 Document Number: 93711 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS 180° sinusoidal conduction IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t I2t for fusing VALUES UNITS 50 A 94 °C 80 A No voltage reapplied 1430 100 % VRRM reapplied 1200 No voltage reapplied 1490 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied A 1255 10.18 9.30 7.20 kA2s 6.56 t = 0.1 to 10 ms, no voltage reapplied,  TJ = TJ maximum 101.8 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.94 High level value of threshold voltage VT(TO)2 ( x IT(AV) < I < 20 x  x IT(AV)), TJ = TJ maximum 1.08 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 4.08 High level value of on-state slope resistance rt2 ( x IT(AV) < I < 20 x  x IT(AV)), TJ = TJ maximum 3.34 Maximum on-state voltage VTM Ipk = 157 A, TJ = 25 °C 1.60 Maximum holding current IH TJ = 25 °C, anode supply 22 V, resistive load, initial IT = 2 A 200 Latching current IL Anode supply 6 V, resistive load 400 kA2s V m V mA SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL VDRM  600 V VDRM  1600 V dI/dt TEST CONDITIONS TC = 125 °C, VDM = Rated VDRM,  Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum ITM = (2 x rated dI/dt) A VALUES UNITS 200 A/μs 100 Typical delay time td TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit Gate pulse = 10 V, 15  source, tp = 20 μs 0.9 Typical turn-off time tq TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/μs dIr/dt = - 10 A/μs, VR = 50 V 110 μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 200 TJ = TJ maximum linear to 67 % rated VDRM 500 (1) UNITS V/μs Note (1) Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90 Revision: 21-Sep-17 Document Number: 93711 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power TEST CONDITIONS VALUES TJ = TJ maximum, tp  5 ms 10 W PG(AV) 2.5 Maximum peak positive gate current IGM 2.5 Maximum peak positive gate voltage +VGM 20 Maximum peak negative gate voltage -VGM 10 IGT 250 TJ = 25 °C Maximum required gate trigger current/voltage are the lowest  value which will trigger all units 6 V anode to cathode applied TJ = 125 °C DC gate voltage required to trigger VGT A V TJ = - 40 °C DC gate current required to trigger UNITS TJ = - 40 °C 100 mA 50 3.5 V TJ = 25 °C 2.5 DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated voltage DC gate voltage not to trigger VGD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 5.0 mA 0.2 V VALUES UNITS -40 to +125 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation 0.35 Maximum thermal resistance,  case to heat sink RthCS Mounting surface, smooth, flat and greased 0.25 K/W Non-lubricated threads 3.4 + 0 - 10 % (30) Lubricated threads 2.3 + 0 - 10 % (20) Allowable mounting torque Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf · in) 28 g 1.0 oz. TO-65 (TO-208AC) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.078 0.057 120° 0.094 0.098 90° 0.120 0.130 60° 0.176 0.183 30° 0.294 0.296 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  Revision: 21-Sep-17 Document Number: 93711 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series 130 Vishay Semiconductors Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 50RIA Series RthJC (DC) = 0.35 K/W 120 Conduction Angle 110 30° 60° 90° 100 120° 180° 90 0 10 20 30 40 50 100 DC 180° 120° 90° 60° 30° 90 80 70 60 50 RMS Limit 40 30 Conduction Period 20 50RIA Series TJ = 125°C 10 0 0 60 10 130 1300 50RIA Series RthJC (DC) = 0.35 K/W 120 Conduction Period 100 90° 60° 120° 30° 180° DC 80 0 10 20 30 40 50 60 70 80 50 RMS Limit 30 Conduction Angle 50RIA Series TJ = 125°C 10 0 0 10 20 30 80 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C 1100 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 50RIA Series 600 1500 180° 120° 90° 60° 30° 20 70 40 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 80 40 60 1200 1 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 2 - Current Ratings Characteristics 60 50 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average On-state Current (A) 70 40 Fig. 4 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Fig. 1 - Current Ratings Characteristics 90 30 Average On-state Current (A) Average On-state Current (A) 110 20 50 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics 1400 1300 1200 1100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 1000 900 800 700 600 500 0.01 50RIA Series 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 21-Sep-17 Document Number: 93711 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series www.vishay.com Vishay Semiconductors Instantaneous On-state Current (A) 1000 100 TJ = 25°C TJ = 125°C 10 50RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJ-hs (K/W) Fig. 7 - Forward Voltage Drop Characteristics 1 Steady State Value RthJ-hs = 0.35 K/W 0.1 50RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr