VS-50TPS12AL-M3

VS-50TPS12AL-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 50 A FEATURES 2 (A) • Designed and JEDEC®-JESD 47 qualified according to • Low IGT designed • 150 °C maximum operating junction temperature 1 2 3 TO-247AD 3L 1 (K) (G) 3 • Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 50 A VDRM/VRRM 1200 V VTM (typ.) 1.1 V IGT (typ.) 35 mA TJ -40 °C to +150 °C Package TO-247AD 3L Circuit configuration Single SCR Typical usage is in input rectification crowbar (soft start) and AC switch motor control, UPS, welding, and battery charge. DESCRIPTION The VS-50TPS12 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching, and phase control applications. The glass passivation technology used, has reliable operation up to 150 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VRRM/VDRM VT VALUES 1200 50 A, TJ = 125 °C IT(AV) 1.1 UNITS V 50 IRMS 79 ITSM 630 dV/dt A 500 V/μs -40 to +150 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA 1200 1300 10 TJ, TStg VOLTAGE RATINGS PART NUMBER VS-50TPS12AL-M3 Revision: 21-Nov-2022 Document Number: 96593 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12AL-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current as AC switch IT(RMS) Peak, one-cycle non-repetitive surge current ITSM I2t for fusing I2t I2√t for fusing I2√t VALUES TEST CONDITIONS TC = 112 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied TYP. MAX. - 50 - 79 - 530 - 630 - 1405 10 ms sine pulse, no voltage reapplied - 1986 t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C - 19 850 10 ms sine pulse, rated VRRM applied Initial TJ = TJ maximum Low level value of threshold voltage VT(TO)1 - 0.89 High level value of threshold voltage VT(TO)2 - 0.97 - 6.77 - 6.32 50 A, TJ = 25 °C 1.2 1.32 100 A, TJ = 25 °C 1.4 1.6 - 150 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 On-state voltage VT Rate of rise of turned-on current dI/dt A2s A2√s V mΩ V A/μs - 300 350 TJ = 25 °C - 0.05 TJ = 125 °C - 10 TJ = TJ maximum, linear to 80 % VDRM, Rg-k = 100 Ω - 500 V/μs TYP. MAX. UNITS - 10 - 2.5 IGM - 2.5 -VGM - 10 IH IL Rate of rise of off-state voltage TJ = 25 °C A - Holding current Latching current Reverse and direct leakage current TJ = 125 °C UNITS IRRM/IDRM dV/dt Anode supply = 6 V, resistive load, TJ = 25 °C mA TRIGGERING PARAMETER Peak gate power Average gate power Peak gate current Peak negative gate voltage SYMBOL PGM PG(AV) TEST CONDITIONS 10 ms sine pulse, no voltage reapplied TJ = -40 °C Required DC gate voltage to trigger Required DC gate to trigger VGT IGT TJ = 25 °C Anode supply = 6 V resistive load VGD DC gate current not to trigger IGD 1.6 1.5 A V TJ = 150 °C - 1 TJ = -40 °C - 100 35 60 - 40 - 0.15 V - 2.5 mA TJ = 25 °C Anode supply = 6 V resistive load TJ = 150 °C DC gate voltage not to trigger - W TJ = 150 °C, VDRM = rated value mA SWITCHING PARAMETER SYMBOL Turn-on time tgt IT = 50 A, VD = 50 % VDRM, Igt = 300 mA, TJ = 25 °C TEST CONDITIONS VALUES 1.5 Turn-off time tq IT = 50 A, VD = 80 % VDRM, dV/dt = 20 V/μs, tp = 200 μs Igt = 100 mA, dI/dt = 10 A/μs, VR = 100 V, TJ = 150 °C 92 UNITS μs Revision: 21-Nov-2022 Document Number: 96593 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12AL-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TYP. MAX. UNITS TJ, TStg -40 150 °C RthJC - 0.35 - 40 0.2 - Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS Mounting torque TEST CONDITIONS Mounting surface, smooth, and greased minimum 6 (5) maximum 12 (10) Marking device Case style Super TO-247AD 3L °C/W kgf · cm (lbf · in) 50TPS12AL ΔRthJ-HS CONDUCTION PER JUNCTION SINE HALF-WAVE CONDUCTION Maximum Allowable Case Temperature ( °C) VS-50TPS12L-M3 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.143 0.166 0.208 0.299 0.490 0.099 0.168 0.223 0.311 0.494 150 RthJC (DC) = 0.35 °C/W 140 30° 130 Ø 60° Conduction Angle 90° 120 120° 110 180° 100 90 0 10 RECTANGULAR WAVE CONDUCTION 180° 20 30 40 50 60 Max. Average On-state Power Loss (W) DEVICE 70 60 50 RMS limit 40 30 Ø 20 Conduction Angle 10 Tj = 150 °C 0 0 RthJC (DC) = 0.35 °C/W DC° Ø Conduction Angle 60° 120 90° 120° 110 180° 100 90 0 10 20 30 40 50 60 70 20 30 40 50 60 Fig. 3 - On-State Power Loss Characteristics 150 30° 10 Average On-state Current (A) 80 Max. Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 180° 120° 90° 60° 30° 80 Fig. 1 - Current Rating Characteristics 130 °C/W 90 Average On - State Current (A) 140 UNITS 110 180° 120° 90° 60° 30° 100 90 80 DC 70 60 RMS limit 50 40 Ø 30 Conduction Angle 20 10 Tj = 150 °C 0 0 10 20 30 40 50 60 70 80 Average On - state Current (A) Average On-state Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 21-Nov-2022 Document Number: 96593 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12AL-M3 Vishay Semiconductors Peak Half Sine Wave On- state Current (A) Peak Half Sine Wave On - state Current (A) www.vishay.com 560 At any rated load condition and with rated VRRM applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 510 460 410 360 310 260 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulse (N) Instantaneous On - state Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 650 Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial Tj = 150 °C No voltage reapplied rated VRRM reapplied 600 550 500 450 400 350 300 250 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulse (N) Fig. 6 - Maximum Non-Repetitive Surge Current 1000 100 TJ = 125 °C 10 TJ = 25 °C 1 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous On - state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 μs, tp ≥ 6 μs (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 2.5 ms (4) PGM = 10 W, tp = 5 ms 10 VGD 0.1 0.0001 IGD 0.001 50TPS12L Series 0.01 0.1 TJ = - 40 °C 1 TJ = 25 °C TJ = 150 °C Instantaneous Gate Voltage (V) 100 (4) b) a) (3) (2) (1) Frequency limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics Revision: 21-Nov-2022 Document Number: 96593 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12AL-M3 ZthJC - Transient Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 1 0.50 0.1 0.33 0.25 0.17 0.08 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 50 T P S 12 A L -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current code (50 = 50 A) 3 - Circuit configuration: T = thyristor 4 - 5 - P = TO-247AD 3L package Type of silicon: S = standard recovery rectifier 6 - Voltage code (12 = 1200 V) 7 - A = Low IGT selection 8 - Package L = long lead 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (example) PREFERRED P/N VS-50TPS12AL-M3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95626 Part marking information www.vishay.com/doc?95007 Revision: 21-Nov-2022 Document Number: 96593 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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