VS-50WQ04FN-M3

VS-50WQ04FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable 1 Anode D-PAK (TO-252AA) • High frequency operation 3 Anode • Popular D-PAK outline • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 5.5 A VR 40 V VF at IF See Electrical table IRM 40 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 9 mJ • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-50WQ04FN-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 5.5 A 40 V Rectangular waveform VRRM IFSM tp = 5 μs sine 340 A VF 5 Apk, TJ = 125 °C 0.44 V TJ Range -40 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-50WQ04FN-M3 UNITS 40 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current  See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current  See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.5 A, L = 8 mH Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 50 % duty cycle at TC = 135 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 5.5 550 A 90 9 mJ 1.2 A Revision: 22-Nov-16 Document Number: 93312 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ04FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 5A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 10 A 5A TJ = 125 °C 10 A Maximum reverse leakage current See fig. 2 IRM (1) Thereshold voltage VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance LS TJ = 25 °C VR = Rated VR TJ = 125 °C VALUES UNITS 0.51 0.63 V 0.44 0.59 3 40 mA 0.27 V 26.77 m VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 405 pF Measured lead to lead 5 mm from package body 5.0 nH VALUES UNITS -40 to +150 °C 3.0 °C/W 0.3 g 0.01 oz. TJ =TJ maximum Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TJ (1), TStg Maximum thermal resistance, junction to case RthJC TEST CONDITIONS DC operation See fig. 4  Approximate weight Marking device Case style D-PAK (similar to TO-252AA) 50WQ04FN Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 22-Nov-16 Document Number: 93312 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ04FN-M3 Vishay Semiconductors 100 100 TJ = 150 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 5 10 15 20 25 30 35 40 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t2 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 22-Nov-16 Document Number: 93312 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ04FN-M3 Vishay Semiconductors 155 4.0 150 3.5 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 145 140 135 Square wave (D = 0.50) 80 % rated VR applied 130 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 3.0 RMS limit 2.5 2.0 1.5 DC 1.0 0.5 See note (1) 120 0 0 1 2 3 4 5 6 7 0 8 1 2 3 4 5 6 7 8 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 22-Nov-16 Document Number: 93312 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ04FN-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 50 W Q 04 FN 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (5.5 A) 3 - Package identifier: 4 - Schottky “Q” series 5 - Voltage rating (04 = 40 V) 6 - FN = TO-252AA (D-PAK) 7 - TRL -M3 7 8 W = D-PAK None = tube TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-50WQ04FN-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-50WQ04FNTR-M3 2000 2000 13" diameter reel VS-50WQ04FNTRL-M3 3000 3000 13" diameter reel VS-50WQ04FNTRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 Revision: 22-Nov-16 Document Number: 93312 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) “M” DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail “C” (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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