VS-5EWX06FNTR-M3

VS-5EWX06FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt® FEATURES • Hyperfast recovery time, extremely low Qrr 2, 4 • 175 °C maximum operating junction temperature • For PFC CCM operation • Low forward voltage drop DPAK (TO-252AA) 1 N/C • Low leakage current 3 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 5A VR 600 V VF at IF 1.55 V trr (typ.) 14 ns TJ max. 175 °C Package DPAK (TO-252AA) Circuit configuration Single State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 144 °C 5 Non-repetitive peak surge current IFSM TJ = 25 °C 50 IFM TC = 144 °C, f = 20 kHz, d = 50 % Peak repetitive forward current Operating junction and storage temperatures TJ, TStg A 10 -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 5 A - 2.39 2.9 IF = 5 A, TJ = 150 °C - 1.55 1.8 VR = VR rated - - 20 TJ = 150 °C, VR = VR rated - - 250 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 3.5 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 11-Apr-18 Document Number: 93248 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5EWX06FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS MAX. UNITS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 14 21 - 16 - TJ = 25 °C - 18 - TJ = 125 °C - 27 - - 3.0 - - 3.9 - TJ = 25 °C - 26 - TJ = 125 °C - 54 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C RthJC - - 3 °C/W TJ = 25 °C IRRM Reverse recovery charge TYP. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V trr Peak recovery current MIN. TJ = 125 °C Qrr IF = 5 A dIF/dt = 200 A/μs VR = 390 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case per leg TEST CONDITIONS Approximate weight 0.01 oz. 5EWX06FN 100 100 TJ = 175 °C 10 g Case style DPAK (TO-252AA) IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 0.3 TJ = 125 °C 1 TJ = 25 °C TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Apr-18 Document Number: 93248 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5EWX06FN-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 180 14 170 12 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 160 DC 150 140 130 Square wave (D = 0.50) Rated VR applied 120 10 RMS limit 8 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 6 4 2 See note (1) 0 110 0 2 4 6 8 0 3 6 9 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 11-Apr-18 Document Number: 93248 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5EWX06FN-M3 www.vishay.com Vishay Semiconductors 30 140 120 100 Qrr (nC) trr (ns) 25 IF = 5 A, TJ = 125 °C 20 IF = 5 A, TJ = 125 °C 80 60 40 15 IF = 5 A, TJ = 25 °C 20 10 100 IF = 5 A, TJ = 25 °C 0 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 11-Apr-18 Document Number: 93248 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5EWX06FN-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 5 E W X 06 FN 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (5 = 5 A) 3 - Circuit configuration: 4 - Package identifier: TRL -M3 8 9 E = single diode W = D-PAK 5 - X = hyperfast recovery time 6 - Voltage rating (06 = 600 V) 7 - FN = TO-252AA 8 - None = tube TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-5EWX06FN-M3 75 3000 Antistatic plastic tube 2000 2000 13" diameter reel VS-5EWX06FNTR-M3 VS-5EWX06FNTRL-M3 3000 3000 13" diameter reel VS-5EWX06FNTRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95215 Revision: 11-Apr-18 Document Number: 93248 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) “M” DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail “C” (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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