VS-60APH03-N3
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Vishay Semiconductors
Hyperfast Rectifier, 60 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
Base
cathode
• Low leakage current
• Soft recovery device
• 175 °C operating junction temperature
• Designed and qualified
JEDEC®-JESD 47
TO-247AC
1
Anode
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
Anode
DESCRIPTION / APPLICATIONS
VS-60APH03-N3 series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
PRODUCT SUMMARY
Package
TO-247AC
IF(AV)
60 A
VR
300 V
VF at IF
0.85 V
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for PDP and use in the output
rectification stage for SMPS, UPS, DC/DC converters as
well as freewheeling diodes in low voltage inverters.
trr typ.
28 ns
TJ max.
175 °C
Diode variation
Single die
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
TEST CONDITIONS
VALUES
UNITS
300
V
VR
Continuous forward current
IF(AV)
TC = 103 °C
60
Single pulse forward current
IFSM
TJ = 25 °C, 10 ms sine pulse
450
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
MIN.
TYP.
MAX.
UNITS
300
-
-
IF = 30 A
-
1.0
1.25
IF = 60 A
-
-
1.45
IF = 30 A, TJ = 125 °C
-
0.85
1.10
IF = 60 A, TJ = 125 °C
-
-
1.30
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
V
VR = VR rated
-
-
10
TJ = 125 °C, VR = VR rated
-
-
100
-
70
-
pF
-
3.5
-
nH
Reverse leakage current
IR
Junction capacitance
CT
VR = 300 V
Series inductance
LS
Measured lead to lead 5 mm from package body
μA
Revision: 04-Jul-17
Document Number: 94796
1
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VS-60APH03-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
-
28
-
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
34
-
TJ = 25 °C
-
42
-
-
64
-
TJ = 25 °C
IRRM
MAX.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 125 °C
Peak recovery current
TYP.
TJ = 125 °C
IF = 60 A
dIF/dt = 200 A/μs
VR = 200 V
-
3.0
-
-
8.5
-
UNITS
ns
A
TJ = 25 °C
-
65
-
TJ = 125 °C
-
273
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-55
-
175
°C
Thermal resistance,
junction to case
RthJC
-
0.56
0.80
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
0.4
-
-
6.0
-
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
°C/W
Approximate Weight
Mounting torque
-
0.22
-
oz.
6.0
-
12
kgf. cm
(12)
-
(10)
(lbf.in)
Case style TO-247AC
60APH03
1000
1000
175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
g
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.3
100
150 °C
125 °C
10
100 °C
1
75 °C
50 °C
0.1
25 °C
0.01
0.001
0.6
0.9
1.2
1.5
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
50
100
150
200
250
300
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 04-Jul-17
Document Number: 94796
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60APH03-N3
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Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
0
50
100
150
200
250
300
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
Single Pulse
(Thermal Resistance)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
180
120
160
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
140
DC
120
100
80
60
40
100
RMS Limit
80
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
60
40
20
0
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 04-Jul-17
Document Number: 94796
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60APH03-N3
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Vishay Semiconductors
90
900
80
800
typical value
700
70
IF = 60 A, 125 °C
600
Qrr (nC)
trr (ns)
60
50
40
IF = 60 A, 125 °C
500
400
300
30
IF = 60 A, 25 °C
20
200
IF = 60 A, 25 °C
100
typical value
10
100
0
100
1000
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 04-Jul-17
Document Number: 94796
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60APH03-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
A
P
H
03
-N3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
A = single diode
4
-
P = TO-247AC
5
-
H = hyperfast rectifier
6
-
Voltage code (03 = 300 V)
7
-
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-60APH03-N3
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95542
Part marking information
www.vishay.com/doc?95007
SPICE model
www.vishay.com/doc?96075
Revision: 04-Jul-17
Document Number: 94796
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Plating
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 20-Apr-17
Document Number: 95542
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000
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