VS-60APU02-N3

VS-60EPU02-N3, VS-60APU02-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop 1 • 175 °C operating junction temperature 1 2 3 • Output rectification 3 TO-247AC 2L • Designed and qualified according to JEDEC®-JESD 47 TO-247AC 3L Base common cathode 2 Base common cathode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Reduced RFI and EMI • Higher frequency operation 1 Cathode 3 Anode Anode 1 VS-60EPU02-N3 • Reduced snubbing Anode 3 • Reduced parts count VS-60APU02-N3 DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 200 V VF at IF 0.81 V trr typ. See Recovery table TJ max. 175 °C Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VALUES UNITS 200 V VR Continuous forward current IF(AV) TC = 127 °C Single pulse forward current IFSM TC = 25 °C, tp = 10 ms 800 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures TJ, TStg 60 A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 60 A - 0.98 1.08 IR = 100 μA UNITS V IF = 60 A, TJ = 175 °C - 0.81 0.88 VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 2 mA Reverse leakage current IR Junction capacitance CT VR = 200 V - 87 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Revision: 29-Nov-2019 Document Number: 94021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU02-N3, VS-60APU02-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current MIN. TYP. MAX. - - 35 TJ = 25 °C - 28 - TJ = 125 °C - 50 - IF = 60 A dIF/dt = 200 A/μs VR = 160 V TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 125 °C Qrr - 4 - - 8 - UNITS ns A TJ = 25 °C - 59 - TJ = 125 °C - 220 - MIN. TYP. MAX. UNITS - - 0.70 K/W nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 °C/W Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.2 - K/W - 5.5 - g - 0.2 - oz. - - 1.2 N⋅m Weight Mounting torque Marking device Case style TO-247AC 2L 60EPU02 Case style TO-247AC 3L 60APU02 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 100 TJ = 175 °C TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1 1.5 2 2.5 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 29-Nov-2019 Document Number: 94021 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU02-N3, VS-60APU02-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 10 0 100 10 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 100 RMS limit 170 Average Power Loss (W) Allowable Case Temperature (°C) 180 160 DC 150 140 Square wave (D = 0.50) 80 % rated VR applied 130 120 110 80 60 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 40 20 DC See note (1) 0 100 0 20 40 60 80 100 0 20 40 60 80 100 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-Nov-2019 Document Number: 94021 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU02-N3, VS-60APU02-N3 www.vishay.com Vishay Semiconductors 800 70 IF = 90 A IF = 60 A IF = 30 A 60 600 500 Qrr (nC) trr (ns) 50 40 30 IF = 30 A IF = 60 A IF = 90 A 400 300 20 10 VR = 160 V TJ = 125 °C TJ = 25 °C 700 200 VR = 160 V TJ = 125 °C TJ = 25 °C 100 0 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 29-Nov-2019 Document Number: 94021 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU02-N3, VS-60APU02-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 E P U 02 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: E = single diode, 2 pins A = single diode, 3 pins - 4 Package: P = TO-247AC 5 - Type of silicon: 6 - Voltage rating (02 = 200 V) 7 - Environmental digit: U = ultrafast recovery -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-60EPU02-N3 25 500 PACKAGING DESCRIPTION Antistatic plastic tube VS-60APU02-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-247AC 2L www.vishay.com/doc?96144 TO-247AC 3L www.vishay.com/doc?96138 TO-247AC 2L -N3 www.vishay.com/doc?95648 TO-247AC 3L-N3 www.vishay.com/doc?95007 www.vishay.com/doc?96049 Revision: 29-Nov-2019 Document Number: 94021 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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