VS-60EPU04-N3, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
1
• 175 °C operating junction temperature
1
2
3
• Designed and qualified
JEDEC®-JESD 47
3
TO-247AC 2L
TO-247AC 3L
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Base
common
cathode
2
Base
common
cathode
2
according
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
1
Cathode
3
Anode
Anode
1
VS-60EPU04-N3
• Reduced parts count
Anode
3
VS-60APU04-N3
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRIMARY CHARACTERISTICS
IF(AV)
60 A
VR
400 V
VF at IF
0.87 V
trr typ.
See Recovery table
TJ max.
175 °C
Package
TO-247AC 2L, TO-247AC 3L
Circuit configuration
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
TEST CONDITIONS
VALUES
UNITS
400
V
VR
Continuous forward current
IF(AV)
TC = 127 °C
Single pulse forward current
IFSM
TC = 25 °C, tp = 10 ms
600
Maximum repetitive forward current
IFRM
Square wave, 20 kHz
120
Operating junction and storage temperatures
TJ, TStg
60
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
400
-
-
IF = 60 A
-
1.05
1.25
IF = 60 A, TJ = 175 °C
-
0.87
1.03
IR = 100 μA
UNITS
V
IF = 60 A, TJ = 125 °C
-
0.93
1.10
VR = VR rated
-
-
50
μA
TJ = 150 °C, VR = VR rated
-
-
2
mA
Reverse leakage current
IR
Junction capacitance
CT
VR = 400 V
-
50
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
Revision: 29-Nov-2019
Document Number: 94022
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04-N3, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A, diF/dt = 200 A/μs, VR = 30 V
-
50
60
-
85
-
-
145
-
TJ = 25 °C
trr
TJ = 125 °C
Peak recovery current
TJ = 25 °C
IRRM
Reverse recovery charge
TJ = 125 °C
Qrr
IF = 60 A
diF/dt = 200 A/μs
VR = 200 V
-
8.8
-
-
15.4
-
UNITS
ns
A
TJ = 25 °C
-
375
-
TJ = 125 °C
-
1120
-
MIN.
TYP.
MAX.
UNITS
-
-
0.70
K/W
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
40
°C/W
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth,
and greased
-
0.2
-
K/W
-
5.5
-
g
Weight
Mounting torque
Marking device
0.2
-
oz.
-
2.4
N·m
10
-
20
lbf · in
Case style TO-247AC 2L
60EPU04
Case style TO-247AC 3L
60APU04
1000
1000
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
1.2
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
100
TJ = 175 °C
10
TJ = 125 °C
1
TJ = 25 °C
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
0
100
200
300
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 29-Nov-2019
Document Number: 94022
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04-N3, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
100
10
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
RMS limit
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
DC
140
Square wave (D = 0.50)
80 % rated VR applied
120
100
80
60
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
40
20
DC
See note (1)
0
80
0
20
40
60
80
100
0
20
40
60
80
100
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-Nov-2019
Document Number: 94022
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04-N3, VS-60APU04-N3
www.vishay.com
180
140
2500
120
IF = 40 A
IF = 60 A
IF = 120 A
2000
1500
100
1000
80
500
60
100
VR = 400 V
TJ = 125 °C
TJ = 25 °C
3000
IF = 120 A
IF = 60 A
IF = 40 A
160
trr (ns)
3500
VR = 400 V
TJ = 125 °C
TJ = 25 °C
Qrr (nC)
200
Vishay Semiconductors
0
100
1000
1000
diF/dt (A/µs)
diF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. diF/dt
Fig. 8 - Typical Stored Charge vs. diF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 29-Nov-2019
Document Number: 94022
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04-N3, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
U
04
-N3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
E = single diode, 2 pins
A = single diode, 3 pins
4
-
Package:
P = TO-247AC
5
-
Type of silicon:
U = ultrafast recovery
6
-
Voltage rating (04 = 400 V)
7
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60EPU04-N3
25
500
Antistatic plastic tube
VS-60APU04-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AC 2L
www.vishay.com/doc?96144
TO-247AC 3L
www.vishay.com/doc?96138
TO-247AC 2L
www.vishay.com/doc?95648
TO-247AC 3L
www.vishay.com/doc?95007
Revision: 29-Nov-2019
Document Number: 94022
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000
