VS-60APU06-N3

VS-60EPU06-N3, VS-60APU06-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop 1 • 175 °C operating junction temperature 1 2 3 • Designed and qualified JEDEC®-JESD 47 3 TO-247AC 2L TO-247AC 3L to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base common cathode 2 Base common cathode 2 according BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing 1 Cathode 3 Anode Anode 1 VS-60EPU06-N3 • Reduced parts count Anode 3 DESCRIPTION / APPLICATIONS VS-60APU06-N3 These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 600 V VF at IF 1.11 V trr typ. See Recovery table TJ max. 175 °C Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Continuous forward current MAX. UNITS 600 V IF(AV) TC = 116 °C Single pulse forward current IFSM TC = 25 °C, tp = 10 ms 600 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures 60 TJ, TStg A -55 to +175 °C UNITS ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.35 1.68 IF = 60 A, TJ = 125 °C - 1.20 1.42 1.30 IR = 100 μA IF = 60 A, TJ = 175 °C - 1.11 VR = VR rated - - 50 TJ = 150 °C, VR = VR rated - - 500 VR = 600 V - 39 - V μA pF Revision: 29-Nov-2019 Document Number: 94023 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06-N3, VS-60APU06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1 A, diF/dt = 200 A/μs, VR = 30 V - 34 45 TJ = 25 °C - 81 - - 164 - - 7.4 - - 17.0 - TJ = 25 °C - 300 - TJ = 125 °C - 1394 - MIN. TYP. MAX. UNITS - - 0.63 K/W TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr TJ = 25 °C TJ = 125 °C IF = 60 A diF/dt = 200 A/μs VR = 200 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 °C/W Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.2 - K/W - 5.5 - g - 0.2 - oz. 1.2 - 2.4 N⋅m 10 - 20 lbf ⋅ in Weight Mounting torque Marking device Case style TO-247AC 2L 60EPU06 Case style TO-247AC 3L 60APU06 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 29-Nov-2019 Document Number: 94023 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06-N3, VS-60APU06-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 200 100 300 500 400 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.7 0.5 0.3 Ri (°C/W) 0.06226 0.32503 0.24271 0.1 0.1 R1 TJ 0.05 R2 τ1 R3 τ2 τ3 TC Notes: 1. Duty factor D = ton/period 2. Peak TJ = PDM x ZthJC + TC Ci = τi/Ri 0.01 0.00001 0.0001 0.001 0.01 0.1 τi (s) 0.00049 0.01294 0.24310 1 10 100 ton - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 160 Average Power Loss (W) Allowable Case Temperature (°C) 180 DC 140 120 Square wave (D = 0.50) 80 % rated VR applied 100 80 120 100 RMS limit 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 40 DC 20 See note (1) 60 0 0 20 40 60 80 100 0 20 40 60 80 100 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-Nov-2019 Document Number: 94023 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06-N3, VS-60APU06-N3 www.vishay.com 300 Vishay Semiconductors 3000 TJ = 125 °C TJ = 25 °C IF = 30 A IF = 60 A 2000 200 Qrr (nC) trr (ns) TJ = 125 °C TJ = 25 °C 2500 250 150 IF = 30 A IF = 60 A 1500 1000 100 500 50 0 10 100 10 1000 100 1000 diF/dt (A/µs) diF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. diF/dt Fig. 8 - Typical Stored Charge vs. diF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 29-Nov-2019 Document Number: 94023 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06-N3, VS-60APU06-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 E P U 06 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: E = single diode, 2 pins A = single diode, 3 pins 4 - Package: P = TO-247AC 5 - Type of silicon: U = ultrafast recovery 6 - Voltage rating (06 = 600 V) 7 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-60EPU06-N3 25 500 Antistatic plastic tube VS-60APU06-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AC 2L www.vishay.com/doc?96144 TO-247AC 3L www.vishay.com/doc?96138 TO-247AC 2L www.vishay.com/doc?95648 TO-247AC 3L www.vishay.com/doc?95007 Revision: 29-Nov-2019 Document Number: 94023 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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