VS-60CPQ150PbF, VS-60CPQ150-N3
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Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
3
2
1
• Guard ring for enhanced ruggedness and long
term reliability
1
3
Anode
Anode
2
1
2
Common
cathode
TO-247AC
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
TO-247AC
IF(AV)
2 x 30 A
VR
150 V
VF at IF
0.67 V
IRM max.
25 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
0.5 mJ
Available
DESCRIPTION
The VS-60CPQ150... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
Rectangular waveform
VRRM
60
A
150
V
IFSM
tp = 5 μs sine
2300
A
VF
30 Apk, TJ = 125 °C (per leg)
0.67
V
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VS-60CPQ150PbF
VS-60CPQ150-N3
UNITS
150
150
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
TEST CONDITIONS
VALUES
UNITS
30
per leg
IF(AV)
50 % duty cycle at TC = 151 °C, rectangular waveform
per device
60
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 1 A, L = 1 mH
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
2300
510
0.5
mJ
1
A
Document Number: 94238
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Revision: 17-Jul-13
VS-60CPQ150PbF, VS-60CPQ150-N3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
SYMBOL
PARAMETER
TEST CONDITIONS
30 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
60 A
30 A
60 A
Maximum reverse leakage current per leg
See fig. 2
IRM
Typical junction capacitance per leg
CT
Typical series inductance per leg
LS
Maximum voltage rate of change
dV/dt
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TYP.
MAX.
0.80
0.83
UNITS
0.93
0.99
0.64
0.67
0.74
0.77
10
100
μA
V
TJ = 125 °C
VR = Rated VR
12
25
mA
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
-
820
pF
Measured lead to lead 5 mm from package body
-
7.5
nH
Rated VR
-
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthCS
Marking device
UNITS
- 55 to 175
°C
DC operation
See fig. 4
0.8
DC operation
0.4
Mounting surface, smooth and greased
0.25
Approximate weight
Mounting torque
VALUES
°C/W
6
g
0.21
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Case style TO-247AC (JEDEC)
60CPQ150
Document Number: 94238
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 17-Jul-13
VS-60CPQ150PbF, VS-60CPQ150-N3
www.vishay.com
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
TJ = 175 °C
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
1
0
0.5
1.0
1.5
2.0
0
2.5
20
40
60
80
100
120
140
160
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
20
40
60
80
100
120
140
160
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1
PDM
t1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 94238
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Revision: 17-Jul-13
VS-60CPQ150PbF, VS-60CPQ150-N3
Vishay Semiconductors
30
180
170
DC
160
150
Square wave (D = 0.50)
80 % rated VR applied
140
130
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
25
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
20
RMS limit
15
DC
10
5
0
120
0
5
10
15
20
25
30
35
40
0
45
5
10
15
20
25
30
35
40
45
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 94238
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 17-Jul-13
VS-60CPQ150PbF, VS-60CPQ150-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
Q
1
2
3
4
5
150 PbF
6
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
4
-
5
-
Schottky “Q” series
6
-
Voltage code (150 = 150 V)
7
-
Environmental digit
7
C = Common cathode
Package:
P = TO-247
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60CPQ150PbF
25
500
Antistatic plastic tube
VS-60CPQ150-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95542
TO-247AC PbF
www.vishay.com/doc?95226
TO-247AC -N3
www.vishay.com/doc?95007
Part marking information
Document Number: 94238
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 17-Jul-13
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Plating
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 20-Apr-17
Document Number: 95542
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000