VS-60CPU03W-N3
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Vishay Semiconductors
Ultrafast Rectifier, FRED Pt®, 2 x 30 A
FEATURES
• Ultrafast recovery time
Common
cathode
2, Base
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC®-JESD 47
1
2
3
TO-247AC 3L
1
Anode
1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
Anode
2
DESCRIPTION / APPLICATIONS
This series is the state of the art ultrafast recovery rectifiers
designed with optimized performance of forward voltage
drop and ultrafast recovery time.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VR
300 V
VF at IF
0.9 V
trr (typical)
50 ns
TJ max.
175 °C
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters, and chopper
motor drives.
Package
TO-247AC 3L
Circuit configuration
Common cathode
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
TEST CONDITIONS
VALUES
UNITS
300
V
VRRM
per leg
per device
Non-repetitive peak surge current per leg
Operating junction and storage temperature range
IF(AV)
TC = 133 °C
IFSM
TJ = 25 °C, tp = 10 ms
TJ, TStg
30
60
A
300
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Breakdown voltage, blocking voltage
VBR, VR
TEST CONDITIONS
MIN.
TYP.
MAX.
300
-
-
IF = 30 A
-
1.03
1.2
IF = 30 A, TJ = 125 °C
-
0.9
1.0
VR = VR rated
-
0.1
5
TJ = 125 °C, VR = VR rated
-
15
100
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 300 V
-
40
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
μA
Revision: 11-Jan-2019
Document Number: 95800
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
38
-
TJ = 25 °C
-
50
-
TJ = 125 °C
-
77
-
-
5.3
-
-
11.3
-
TJ = 25 °C
-
130
-
TJ = 125 °C
-
440
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-55
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
0.9
1.1
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
0.4
-
-
6.0
-
-
0.22
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery time
trr
Peak recovery current
IF = 30 A
dIF/dt = -200 A/μs
VR = 200 V
TJ = 25 °C
IRRM
Reverse recovery charge
TEST CONDITIONS
TJ = 125 °C
Qrr
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
Weight
6.0
(12)
Mounting torque
Case style TO-247AC 3L
g
60CPU03W
1000
1000
IRM - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
Marking device
°C/W
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
175 °C
100
150 °C
10
125 °C
1
25 °C
0.1
0.01
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
50
100
150
200
250
300
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 11-Jan-2019
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CT - Junction Capacitance (pF)
1000
100
10
0
50
100
150
200
250
300
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
180
100
170
90
160
80
150
70
trr (ns)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
DC
140
130
125 °C
60
25 °C
50
Square wave (D = 0.50)
rated VR applied
120
40
110
30
See note (1)
100
20
0
5
10
15
20
25
30
35
40
45
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Revision: 11-Jan-2019
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1000
50
900
40
800
700
30
125 °C
600
Qrr (nC)
Average Power Loss (W)
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
20
10
500
400
300
25 °C
200
100
0
0
0
5
10
15
20
25
30
35
40
100
45
1000
dIF/dt (A/μs)
IF(AV) - Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 11-Jan-2019
Document Number: 95800
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VS-60CPU03W-N3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
U
03
W
-N3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration: C = common cathode
4
-
P = TO-247AC
5
-
U = ultrafast rectifier
6
-
Voltage code (03 = 300 V)
7
-
Special
8
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER PACKAGE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60CPU03W-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
Revision: 11-Jan-2019
Document Number: 95800
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Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
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Disclaimer
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