VS-60CPU06-N3
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Vishay Semiconductors
Ultrafast Rectifier, FRED Pt®, 2 x 30 A
FEATURES
Base
common
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
1
2
• Designed and qualified
JEDEC®-JESD 47
3
TO-247AC 3L
Anode 1
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 2
1
according
3
DESCRIPTION / APPLICATIONS
VS-60CPU06... series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VR
600 V
VF at IF
1.1 V
trr typ.
27 ns
TJ max.
175 °C
Package
TO-247AC 3L
Circuit configuration
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
Average rectified forward current
TEST CONDITIONS
VALUES
UNITS
600
V
VRRM
per leg
per device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
IF(AV)
30
Rated VR, TC = 137 °C
60
IFSM
TJ = 25 °C, tp = 10 ms
300
IFM
Rated VR, square wave, 20 kHz, TC = 137 °C
TJ, TStg
A
60
-65 to +175
°C
MIN.
TYP.
MAX.
UNITS
600
-
-
IF = 30 A
-
1.31
1.65
IF = 30 A, TJ = 150 °C
-
1.1
1.4
VR = VR rated
-
0.02
50
TJ = 150 °C, VR = VR rated
-
30
250
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
IR = 100 μA
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 200 V
-
22
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
μA
Revision: 10-Oct-2019
Document Number: 94658
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VS-60CPU06-N3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
Reverse recovery time
Peak recovery current
trr
IRRM
MIN.
TYP.
MAX.
-
27
35
TJ = 25 °C
-
42
-
TJ = 125 °C
-
110
-
IF = 30 A
dIF/dt = - 200 A/μs
VR = 200 V
TJ = 25 °C
TJ = 125 °C
-
5
-
-
11
-
UNITS
ns
A
TJ = 25 °C
-
110
-
TJ = 125 °C
-
630
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
0.6
0.9
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
0.4
-
-
6.0
-
-
0.22
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Weight
6.0
(5.0)
Mounting torque
Marking device
Case style TO-247AC 3L
°C/W
g
60CPU06
Revision: 10-Oct-2019
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VS-60CPU06-N3
Vishay Semiconductors
1000
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.0
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
.
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Oct-2019
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VS-60CPU06-N3
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1000
160
DC
trr (ns)
Allowable Case Temperature (°C)
180
140
Square wave (D = 0.50)
Rated VR applied
IF = 30 A, TJ = 25 °C
120
See note (1)
100
0
5
10
15
20
25
30
35
40
10
100
45
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
10 000
60
50
40
1000
RMS limit
D = 0.01
30
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
20
DC
10
100
0
0
10
20
30
40
IF = 30 A, TJ = 125 °C
Qrr (nC)
Average Power Loss (W)
IF = 30 A, TJ = 125 °C
100
50
IF = 30 A, TJ = 25 °C
10
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 10-Oct-2019
Document Number: 94658
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VS-60CPU06-N3
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(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
U
06
-N3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
4
-
C = common cathode
Package:
P = TO-247AC (modified)
5
-
U = ultrafast rectifier
6
-
Voltage rating (06 = 600 V)
7
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60CPU06-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
SPICE model
www.vishay.com/doc?96084
Revision: 10-Oct-2019
Document Number: 94658
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Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
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Revision: 01-Jan-2023
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Document Number: 91000