VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 30 A
FEATURES
Base 2
common
cathode
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
Anode
3L TO-220AB
Anode
2
1 Common 3
cathode
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VR
35 V, 40 V, 45 V
VF at IF
0.53 V
IRM max.
250 mA at 125 °C
TJ max.
150 °C
DESCRIPTION
EAS
20 mJ
Package
3L TO-220AB
Circuit configuration
Common cathode
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
60
A
35 to 45
V
Rectangular waveform (per device)
VRRM
IFRM
TC = 113 °C (per leg)
IFSM
tp = 5 μs sine
1500
VF
30 Apk, TJ = 125 °C
0.53
V
TJ
Range
-65 to +150
°C
60
A
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-60CTQ035-M3
VS-60CTQ040-M3
VS-60CTQ045-M3
UNITS
35
40
45
V
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average forward
current
per leg
per device
Peak repetitive forward current per leg
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 113 °C, rectangular waveform
IFRM
Rated VR, square wave, 20 kHz, TC = 113 °C
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
VALUES
UNITS
30
60
60
A
1500
Maximum peak one cycle non-repetitive
surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 3 A, L = 4.40 mH
20
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
A
Repetitive avalanche current per leg
10 ms sine or 6 ms rect. pulse
300
Revision: 17-Aug-17
Document Number: 96279
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VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
SYMBOL
PARAMETER
TEST CONDITIONS
30 A
Maximum forward voltage drop
VFM (1)
TJ = 25 °C
60 A
30 A
TJ = 125 °C
60 A
TJ = 25 °C
Maximum instantaneous reverse current
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
LS
Measured from top of terminal to mounting plane
Typical series inductance
Maximum voltage rate of change
dV/dt
Rated DC voltage
TJ = 125 °C
Rated VR
TYP.
MAX.
0.51
0.56
0.66
0.72
0.48
0.53
0.68
0.75
0.33
2
145
250
UNITS
V
mA
2000
pF
8.0
nH
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
SYMBOL
PARAMETER
TEST CONDITIONS
VALUES
Maximum junction temperature range
TJ
-65 to +150
Maximum storage temperature range
TStg
-65 to +175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
1.2
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
°C
°C/W
Approximate weight
Mounting torque
UNITS
minimum
maximum
Non-lubricated threads
2
g
0.07
oz.
6 (5)
kgf · cm
12 (10)
(lbf · in)
60CTQ035
Marking device
Case style 3L TO-220AB
60CTQ040
60CTQ045
Revision: 17-Aug-17
Document Number: 96279
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
TJ = 150 °C
100
TJ = 125 °C
TJ = 100 °C
10
TJ = 75 °C
TJ = 50 °C
1
0.1
TJ = 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.2
1.0
1.4
0
5
10
15
25
20
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
0.00001
t1
t2
Single pulse
(thermal resistance)
0.0001
0.001
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 17-Aug-17
Document Number: 96279
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3
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Vishay Semiconductors
30
Average Power Loss (W)
Allowable Case Temperature (°C)
160
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
150
140
DC
130
120
Square wave (D = 0.50)
80 % rated VR applied
110
100
90
80
70
25
20
15
RMS limit
10
DC
5
See note (1)
0
60
0
5
10
15
20
25
30
35
40
5
0
45
10
15
20
25
30
35
40
45
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 17-Aug-17
Document Number: 96279
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
C
T
Q
045
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration
C = common cathode
4
-
Package
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage ratings
7
-
Environmental digit
035 = 35 V
040 = 40 V
045 = 45 V
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60CTQ035-M3
50
1000
Antistatic plastic tube
VS-60CTQ040-M3
50
1000
Antistatic plastic tube
VS-60CTQ045-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96154
Part marking information
www.vishay.com/doc?95028
Revision: 17-Aug-17
Document Number: 96279
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
3L TO-220AB
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
D
(H1)
H1
C
D2
(6) D
2 3
D
L1 (2)
C
(6)
c
3xb
D1
3 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96154
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Revision: 09-Jul-2021
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Document Number: 91000