VS-60CTQ045-M3

VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 30 A FEATURES Base 2 common cathode • 150 °C TJ operation • Low forward voltage drop • High frequency operation Anode 3L TO-220AB Anode 2 1 Common 3 cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VR 35 V, 40 V, 45 V VF at IF 0.53 V IRM max. 250 mA at 125 °C TJ max. 150 °C DESCRIPTION EAS 20 mJ Package 3L TO-220AB Circuit configuration Common cathode This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 60 A 35 to 45 V Rectangular waveform (per device) VRRM IFRM TC = 113 °C (per leg) IFSM tp = 5 μs sine 1500 VF 30 Apk, TJ = 125 °C 0.53 V TJ Range -65 to +150 °C 60 A VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-60CTQ035-M3 VS-60CTQ040-M3 VS-60CTQ045-M3 UNITS 35 40 45 V ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per leg per device Peak repetitive forward current per leg TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 113 °C, rectangular waveform IFRM Rated VR, square wave, 20 kHz, TC = 113 °C 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 30 60 60 A 1500 Maximum peak one cycle non-repetitive  surge current per leg IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 3 A, L = 4.40 mH 20 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse 300 Revision: 17-Aug-17 Document Number: 96279 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 30 A Maximum forward voltage drop VFM (1) TJ = 25 °C 60 A 30 A TJ = 125 °C 60 A TJ = 25 °C Maximum instantaneous reverse current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured from top of terminal to mounting plane Typical series inductance Maximum voltage rate of change dV/dt Rated DC voltage TJ = 125 °C Rated VR TYP. MAX. 0.51 0.56 0.66 0.72 0.48 0.53 0.68 0.75 0.33 2 145 250 UNITS V mA 2000 pF 8.0 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS VALUES Maximum junction temperature range TJ -65 to +150 Maximum storage temperature range TStg -65 to +175 Maximum thermal resistance,  junction to case per leg RthJC DC operation 1.2 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C °C/W Approximate weight Mounting torque UNITS minimum maximum Non-lubricated threads 2 g 0.07 oz. 6 (5) kgf · cm 12 (10) (lbf · in) 60CTQ035 Marking device Case style 3L TO-220AB 60CTQ040 60CTQ045 Revision: 17-Aug-17 Document Number: 96279 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 TJ = 75 °C TJ = 50 °C 1 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.2 1.0 1.4 0 5 10 15 25 20 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.00001 t1 t2 Single pulse (thermal resistance) 0.0001 0.001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 17-Aug-17 Document Number: 96279 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3 www.vishay.com Vishay Semiconductors 30 Average Power Loss (W) Allowable Case Temperature (°C) 160 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 150 140 DC 130 120 Square wave (D = 0.50) 80 % rated VR applied 110 100 90 80 70 25 20 15 RMS limit 10 DC 5 See note (1) 0 60 0 5 10 15 20 25 30 35 40 5 0 45 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 17-Aug-17 Document Number: 96279 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ035-M3, VS-60CTQ040-M3, VS-60CTQ045-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 C T Q 045 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration C = common cathode 4 - Package T = TO-220 5 - Schottky “Q” series 6 - Voltage ratings 7 - Environmental digit 035 = 35 V 040 = 40 V 045 = 45 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-60CTQ035-M3 50 1000 Antistatic plastic tube VS-60CTQ040-M3 50 1000 Antistatic plastic tube VS-60CTQ045-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 17-Aug-17 Document Number: 96279 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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