VS-60EPS12-M3

VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Glass passivated pellet chip junction 1 • Designed and qualified JEDEC®-JESD 47 3 TO-247AC 2L 1 Cathode 3 Anode according to Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Input rectification PRIMARY CHARACTERISTICS IF(AV) 60 A • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines VR 800 V to 1200 V VF at IF 1.09 V IFSM 1000 A DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. TJ max. 150 °C Package TO-247AC 2L Circuit configuration Single These devices are intended for use in main rectification (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 60 A VRRM 800/1200 V IFSM 1000 A VF 60 A, TJ = 25 °C TJ 1.09 V -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRSM, MAXIMUM VRRM, MAXIMUM NON-REPETITIVE PEAK REVERSE PEAK REVERSE VOLTAGE VOLTAGE V V VS-60EPS08-M3 800 900 VS-60EPS12-M3 1200 1300 IRRM AT 150 °C mA 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I 2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 118 °C, 180° conduction half sine wave 60 10 ms sine pulse, rated VRRM applied 840 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated VRRM applied 3530 10 ms sine pulse, no voltage reapplied 4220 t = 0.1 ms to 10 ms, no voltage reapplied 42 200 UNITS A A2s A2√s Revision: 29-Nov-2019 Document Number: 94345 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES UNITS 30 A, TJ = 25 °C 1.0 V 60 A, TJ = 25 °C 1.09 V 3.96 mΩ 0.74 V TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM 0.1 mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, unction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device UNITS -40 to +150 °C 0.35 °C/W 40 Mounting surface, smooth, and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AC 2L 60EPS08 60EPS12 Revision: 29-Nov-2019 Document Number: 94345 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors 110 VS-60EPS.. Series RthJC (DC) = 0.35 K/W Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 140 Ø Conduction angle 130 120 60° 90° 110 120° 30° 180° 90 80 70 60 RMS limit 50 40 Ø 30 Conduction period 20 VS-60EPS.. Series TJ = 150 °C 10 0 100 0 10 20 30 40 50 60 0 70 Average Forward Current (A) 94345_01 60 80 100 900 VS-60EPS.. Series RthJC (DC) = 0.35 K/W Peak Half Sine Wave Forward Current (A) 140 Ø Conduction period 130 DC 30° 60° 120 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 800 180° 700 600 500 400 300 90° VS-60EPS.. Series 120° 200 110 0 20 40 60 80 1 100 Average Forward Current (A) 94345_02 80 1000 60 50 Peak Half Sine Wave Forward Current (A) 1100 180° 120° 90° 60° 30° RMS limit 40 30 Ø 20 Conduction angle 10 VS-60EPS.. Series TJ = 150 °C 10 20 30 40 50 60 900 800 70 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 700 600 500 400 300 200 0 0 100 Fig. 5 - Maximum Non-Repetitive Surge Current 90 70 10 Number of Equal Amplitude Half Cycle Current Pulse (N) 94345_05 Fig. 2 - Current Rating Characteristics Maximum Average Forward Power Loss (W) 40 Fig. 4 - Forward Power Loss Characteristics 150 94345_03 20 Average Forward Current (A) 94345_04 Fig. 1 - Current Rating Characteristics Maximum Allowable Case Temperature (°C) DC 180° 120° 90° 60° 30° 100 100 0.01 94345_06 VS-60EPS.. Series 0.1 1.0 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2019 Document Number: 94345 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS..-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 VS-60EPS.. Series 1 0 94345_07 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 VS-60EPS.. Series Single pulse 0.01 0.0001 94345_08 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 94345 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 E P S 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: E = single diode 4 - 5 - Package: P = TO-247AC modified Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 08 = 800 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-60EPS08-M3 25 500 Antistatic plastic tubes VS-60EPS12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96144 Part marking information www.vishay.com/doc?95648 SPICE model www.vishay.com/doc?95625 Revision: 29-Nov-2019 Document Number: 94345 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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