VS-60EPS16-M3
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 60 A
FEATURES
Base
cathode
• Very low forward voltage drop
• 150 °C max. operating junction temperature
2
• Glass passivated pellet chip junction
1
• Designed and qualified
JEDEC®-JESD 47
3
TO-247AC 2L
1
Cathode
3
Anode
according
to
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
PRIMARY CHARACTERISTICS
IF(AV)
60 A
VR
1600 V
VF at IF
1.15 V
IFSM
950 A
TJ max.
150 °C
Package
TO-247AC 2L
Circuit configuration
Single
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
60
A
VRRM
1600
V
IFSM
950
A
VF
Sinusoidal waveform
60 A, TJ = 25 °C
TJ
1.15
V
-40 to +150
°C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM AT 150 °C
mA
VS-60EPS16-M3
1600
1700
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
TEST CONDITIONS
VALUES
TC = 118 °C, 180° conduction half sine wave
60
10 ms sine pulse, rated VRRM applied
800
10 ms sine pulse, no voltage reapplied
950
10 ms sine pulse, rated VRRM applied
3200
10 ms sine pulse, no voltage reapplied
4525
t = 0.1 ms to 10 ms, no voltage reapplied
45 250
UNITS
A
A2s
A2√s
Revision: 29-Nov-2019
Document Number: 94346
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPS16-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
30 A, TJ = 25 °C
1.0
60 A, TJ = 25 °C
1.15
TJ = 150 °C
TJ = 25 °C
V
3.96
mΩ
0.74
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
VALUES
UNITS
-40 to +150
°C
DC operation
0.35
Mounting surface, smooth and greased
0.2
Approximate weight
Mounting torque
6
g
0.21
oz.
minimum
6.0 (5)
maximu
m
12 (10)
Marking device
Case style TO-247AC 2L
150
kgf · cm
(lbf · in)
60EPS16
150
VS-60EPS.. Series
RthJC (DC) = 0.35 K/W
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
°C/W
40
140
Ø
Conduction angle
130
120
90°
110
60°
120°
30°
VS-60EPS.. Series
RthJC (DC) = 0.35 K/W
140
Ø
Conduction period
130
30°
60°
90°
120
120°
180°
180°
DC
110
100
0
10
20
30
40
50
60
70
0
20
40
60
80
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
100
Revision: 29-Nov-2019
Document Number: 94346
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPS16-M3
www.vishay.com
900
90
180°
120°
90°
60°
30°
80
70
60
RMS limit
50
40
Ø
30
Conduction angle
20
VS-60EPS.. Series
TJ = 150 °C
10
700
600
500
400
300
VS-60EPS.. Series
200
0
0
10
20
30
40
50
60
70
1
10
100
Average Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
110
DC
180°
120°
90°
60°
30°
100
90
80
70
60
RMS limit
50
Ø
40
Conduction period
30
20
VS-60EPS.. Series
TJ = 150 °C
10
20
40
60
80
800
700
600
500
400
300
200
VS-60EPS.. Series
100
0.01
0
0
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated Vrrm reapplied
900
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
At any rated load condition and with
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
800
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
Vishay Semiconductors
100
0.1
Average Forward Current (A)
10
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - Forward Power Loss Characteristics
Instantaneous Forward Current (A)
1
Pulse Train Duration (s)
1000
100
TJ = 25 °C
TJ = 150 °C
10
VS-60EPS.. Series
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 29-Nov-2019
Document Number: 94346
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPS16-M3
www.vishay.com
Vishay Semiconductors
ZthJC - Transient Thermal
Impedance (°C/W)
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
VS-60EPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
S
16
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
E = single diode
4
-
Package:
P = TO-247AC 2L
5
-
Type of silicon:
6
-
Voltage rating (16 = 1600 V)
7
-
Environmental digit:
S = standard recovery rectifier
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60EPS16-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96144
Part marking information
www.vishay.com/doc?95648
Revision: 29-Nov-2019
Document Number: 94346
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000
