VS-60EPU06HN3

VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified TO-247AC • AEC-Q101 qualified, meets JESD 201 class 1A whisker test Cathode to base 2 Cathode to base 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Reduced RFI and EMI 1 Cathode • Higher frequency operation 3 Anode 1 Anode 3 Anode • Reduced snubbing VS-60APU06HN3 VS-60EPU06HN3 • Reduced parts count DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Package TO-247AC modified (2 pins), TO-247AC IF(AV) 60 A VR 600 V VF at IF 1.11 V trr typ. See Recovery table TJ max. 175 °C Diode variation Single die These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.   ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Continuous forward current MAX. UNITS 600 V IF(AV) TC = 116 °C Single pulse forward current IFSM TC = 25 °C 600 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures 60 TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.35 1.68 IF = 60 A, TJ = 125 °C - 1.20 1.42 IF = 60 A, TJ = 175 °C - 1.11 1.30 VR = VR rated - - 50 TJ = 150 °C, VR = VR rated - - 500 VR = 600 V - 39 - IR = 100 μA UNITS V μA pF Revision: 09-Jul-15 Document Number: 93806 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 34 45 IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TJ = 25 °C - 81 - TJ = 125 °C - 164 - TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 60 A dIF/dt = 200 A/μs VR = 200 V UNITS ns - 7.4 - - 17.0 - - 300 - - 1394 - MIN. TYP. MAX. - - 0.63 - 0.2 - - 5.5 - g - 0.2 - oz. 1.2 (10) - 2.4 (20) Nm (lbf  in) TJ = 125 °C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth and greased Weight Mounting torque Marking device Case style TO-247AC modified 60EPU06H Case style TO-247AC 60APU06H 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 UNITS 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Jul-15 Document Number: 93806 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 200 100 300 500 400 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.7 0.5 0.3 Ri (°C/W) 0.06226 0.32503 0.24271 0.1 0.1 R1 TJ 0.05 R2 τ1 R3 τ2 τ3 TC Notes: 1. Duty factor D = ton/period 2. Peak TJ = PDM x ZthJC + TC Ci = τi/Ri 0.01 0.00001 0.0001 0.001 0.01 0.1 τi (s) 0.00049 0.01294 0.24310 1 10 100 ton - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 160 Average Power Loss (W) Allowable Case Temperature (°C) 180 DC 140 120 Square wave (D = 0.50) 80 % rated VR applied 100 80 120 100 RMS limit 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 40 DC 20 See note (1) 60 0 0 20 40 60 80 100 0 20 40 60 80 100 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-Jul-15 Document Number: 93806 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com 300 Vishay Semiconductors 3000 TJ = 125 °C TJ = 25 °C IF = 30 A IF = 60 A 2000 200 Qrr (nC) trr (ns) TJ = 125 °C TJ = 25 °C 2500 250 150 IF = 30 A IF = 60 A 1500 1000 100 500 50 0 10 100 10 1000 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC;  Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 09-Jul-15 Document Number: 93806 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 E P U 06 H N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: E = single diode A = single diode, 3 pins 4 - P = TO-247AC (modified) 5 - U = ultrafast recovery 6 - Voltage rating (06 = 600 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-60EPU06HN3 25 500 Antistatic plastic tube VS-60APU06HN3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-247AC modified www.vishay.com/doc?95253 TO-247AC www.vishay.com/doc?95223 TO-247AC modified www.vishay.com/doc?95442 TO-247AC www.vishay.com/doc?95007 www.vishay.com/doc?95545 Revision: 09-Jul-15 Document Number: 93806 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Plating (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.530 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c Revision: 11-Dec-2019 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC modified DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 A2 S (Datum B) Ø K M DBM Ø P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb A1 (b1, b3, b5) Plating View A - A C 2x e b4 0.10 M C A M (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.530 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c Revision: 11-Dec-2019 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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