VS-65EPF06L-M3, VS-65APF06L-M3
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop and short
reverse recovery time
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC® - JESD 47
2
1
1
2
3
3
TO-247AD 2L
Base cathode
2
TO-247AD 3L
Base cathode
2
• Flexible solution for reliable AC power rectification
• High surge, low VF rugged blocking diode for DC charging
stations
• AEC-Q101 qualified P/N available (VS-65EPF06LHM3,
VS-65APF06LHM3)
1
Cathode
3
Anode
VS-65EPF06L-M3
3
Anode
1
Anode
VS-65APF06L-M3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
PRIMARY CHARACTERISTICS
IF(AV)
65 A
VR
600 V
VF at IF
1.32 V
DESCRIPTION
IFSM
830 A
trr
70 ns
TJ max.
150 °C
The VS-65EPF06-M3 and VS-65APF06-M3 soft recovery
rectifier series has been optimized for combined short
reverse recovery time and low forward voltage drop.
Snap factor
0.5
Package
TO-247AD 2L, TO-247AD 3L
Circuit configuration
Single
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
65
A
VRRM
600
V
IFSM
830
A
ns
trr
1 A, 100 A /μs
70
VF
30 A, TJ = 25 °C
1.1
V
-40 to +150
°C
TJ
VOLTAGE RATINGS
PART NUMBER
VRSM, MAXIMUM
VRRM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
VS-65EPF06L-M3
600
700
VS-65APF06L-M3
600
700
IRRM
AT 150 °C
mA
16
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 117 °C, 180° conduction half sine wave
65
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
700
10 ms sine pulse, no voltage reapplied
830
10 ms sine pulse, rated VRRM applied
2450
10 ms sine pulse, no voltage reapplied
3460
UNITS
A
A2s
t = 0.1 ms to 10 ms, no voltage reapplied
34 600
A2s
TEST CONDITIONS
VALUES
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
65 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = rated VRRM
1.32
V
5.0
m
0.88
V
0.1
mA
16
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 60 Apk
25 A/μs
25 °C
Typical
VALUES
UNITS
180
ns
3.4
A
0.5
μC
IFM
trr
ta
tb
dir
dt
t
Qrr
IRM(REC)
0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
unction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to +150
°C
0.25
°C/W
40
Mounting surface, smooth, and greased
0.25
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style TO-247AD 2L
65EPF06L
Case style TO-247AD 3L
65APF06L
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VS-65EPF06L-M3, VS-65APF06L-M3
150
RthJC (DC) = 0.25 °C/W
140
Conduction
angle
130
120
110
60°
100
30°
120°
90°
180°
90
0
10
20
30
40
50
60
70
120
90
Conduction angle
120
110
100
60°
DC
120°
90°
30°
180°
80
20
40
60
80
100
120
Conduction angle
30
TJ = 150 °C
0
0
20
40
60
80
100
120
800
60
RMS limit
40
Conduction angle
20
TJ = 150 °C
0
30
40
50
60
70
Peak Half Sine Wave Forward Current (A)
180°
120°
90°
60°
30°
20
Initial TJ = 175 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
600
500
400
300
200
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
100
10
At any rated load condition and with
rated VRRM applied following surge.
700
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Max. Average On-state Power Loss (W)
RMS limit
60
Fig. 4 - Forward Power Loss Characteristics
130
0
DC
Fig. 1 - Current Rating Characteristics
140
80
180°
120°
90°
60°
30°
Average On-state Current (A)
RthJC (DC) = 0.25 °C/W
0
150
Average On-State Current (A)
150
90
Max. Average On-state Power Loss (W)
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Max. Allowable Case Temperature (°C)
Max. Allowable Case Temperature (°C)
www.vishay.com
900
800
700
600
Maximum non-repetitive surge current
vs. pulse train duration.
Initial TJ = 195 °C
No voltage reapplied
Rated VRRM reapplied
500
400
300
200
100
0.01
0.1
1
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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VS-65EPF06L-M3, VS-65APF06L-M3
Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5
1.0
2.5
2.0
1.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Qrr - Typical Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
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0.20
IFM = 60 A
IFM = 30 A
0.15
IFM = 10 A
0.10
IFM = 5 A
TJ = 25 °C
IFM = 1 A
0.05
0
80
40
160
120
200
dI/dt - Rate of Fall of Forward Current (A/µs)
0.40
0.35
IFM = 60 A
0.30
IFM = 30 A
0.25
IFM = 10 A
0.20
IFM = 5 A
0.15
IFM = 1 A
TJ = 150 °C
0.10
10
20
30
40
50
60
70
80
90
100
IFM = 60 A
3
IFM = 30 A
2
IFM = 10 A
1
IFM = 5 A
IFM = 1 A
0
40
0
80
160
120
200
dI/dt - Rate of Fall of Forward Current (A/µs)
5
TJ = 150 °C
IFM = 60 A
4
IFM = 30 A
3
IFM = 10 A
2
IFM = 5 A
1
IFM = 1 A
0
10
20
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Irr - Typical Reverse Recovery Current (A)
trr - Typical Reverse Recovery Time (µs)
Fig. 8 - Thermal Impedance ZthJC Characteristics
0.45
TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Qrr - Typical Reverse Recovery Charge (µC)
trr - Typical Reverse Recovery Time (µs)
Fig. 7 - Forward Voltage Drop Characteristics
4
25
TJ = 25 °C
IFM = 60 A
20
IFM = 30 A
15
IFM = 10 A
10
IFM = 5 A
IFM = 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 06-Jul-2018
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VS-65EPF06L-M3, VS-65APF06L-M3
Irr - Typical Reverse Recovery Current (A)
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Vishay Semiconductors
25
TJ = 150 °C
20
IFM = 60 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
15
10
5
0
10
20
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance
(°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
0.5
0.1
0.33
0.25
Steady state value
(DC operation)
0.17
Single pulse
0.08
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 06-Jul-2018
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VS-65EPF06L-M3, VS-65APF06L-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
65
E
P
F
06
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (65 = 65 A)
3
-
Circuit configuration:
E = single, 2 pins
A = single, 3 pins
4
-
5
-
Package:
P = TO-247AD
Type of silicon:
F = fast recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
L = long leads
8
-
Environmental digit:
06 = 600 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-65EPF06L-M3
25
500
PACKAGING DESCRIPTION
Antistatic plastic tubes
VS-65APF06L-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
www.vishay.com/doc?95536
TO-247AD 3L
www.vishay.com/doc?95626
TO-247AD 2L
www.vishay.com/doc?95648
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 06-Jul-2018
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Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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