VS-65EPF12LHM3

VS-65EPF12LHM3, VS-65APF12LHM3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 65 A FEATURES • Very low forward voltage drop • Glass passivated pellet chip junction 2 • AEC-Q101 qualified meets JESD 201 class 1A whisker test 1 1 2 TO-247AD 2L TO-247AD 3L • Flexible solution for reliable AC power rectification Base cathode 2 Base cathode 2 • High surge, low VF rugged blocking diode for DC charging stations 3 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 Cathode 3 Anode VS-65EPF12LHM3 3 Anode 1 Anode VS-65APF12LHM3 APPLICATIONS • On-board and off-board EV / HEV battery chargers • Renewable energy inverters DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 65 A VR 1200 V VF at IF 1.42 V IFSM 830 A trr 95 ns High voltage rectifiers optimized for very low forward voltage drop with moderate leakage, and short reverse recovery time. These devices are intended for use in main rectification (single or three phase bridge). TJ max. 150 °C Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single Snap factor 0.6     MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 65 A VRRM 1200 V IFSM 830 A 95 ns trr 1 A, 100 A/μs VF 30 A, TJ = 25 °C TJ 1.20 V -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRSM, MAXIMUM VRRM, MAXIMUM NON-REPETITIVE PEAK REVERSE PEAK REVERSE VOLTAGE VOLTAGE V V VS-65EPF12LHM3 1200 1300 VS-65APF12LHM3 1200 1300 IRRM AT 150 °C mA 16 Revision: 22-Feb-18 Document Number: 96497 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPF12LHM3, VS-65APF12LHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 113 °C, 180° conduction half sine wave 65 Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 700 10 ms sine pulse, no voltage reapplied 830 10 ms sine pulse, rated VRRM applied 2450 10 ms sine pulse, no voltage reapplied 3460 t = 0.1 ms to 10 ms, no voltage reapplied UNITS A A2s 34 600 A2s VALUES UNITS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 65 A, TJ = 25 °C 1.42 V 4.6 m 0.9 V TJ = 150 °C TJ = 25 °C TJ = 150 °C 0.1 VR = rated VRRM mA 16 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 60 Apk 25 A/μs 25 °C Typical VALUES UNITS 480 ns 8 A 2.7 μC IFM trr ta tb dir dt t Qrr IRM(REC) 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  unction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.25 °C/W 40 Mounting surface, smooth, and greased 0.25 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AD 2L 65EPF12LH Case style TO-247AD 3L 65APF12LH Revision: 22-Feb-18 Document Number: 96497 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPF12LHM3, VS-65APF12LHM3 150 RthJC (DC) = 0.25 °C/W 140 Conduction 130 120 110 60° 100 30° 120° 90° 180° 90 0 10 20 30 40 50 60 70 Max. Average On-state Power Loss (W) Vishay Semiconductors 150 120 90 RMS limit 60 Conduction Angle 30 Tj = 150°C 0 0 20 40 60 80 100 120 Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 800 RthJC (DC) = 0.25 °C/W At any rated load condition and with rated VRRM applied following surge. 140 Conduction angle 130 120 110 100 60° 90 DC Average On-state Current (A) 150 DC 120° 90° 30° 700 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 600 500 400 180° 300 80 1 0 20 40 60 80 100 120 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average On-State Current (A) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 900 120 180° 120° 90° 60° 30° 100 80 60 800 Peak Half Sine Wave Forward Current (A) Max. Average On-state Power Loss (W) 180° 120° 90° 60° 30° Average On-State Current (A) Peak Half Sine Wave Forward Current (A) Max. Allowable Case Temperature (°C) Max. Allowable Case Temperature (°C) www.vishay.com RMS limit 40 Conduction angle Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 700 600 500 400 20 TJ = 150 °C 0 0 10 20 30 40 50 60 70 300 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 22-Feb-18 Document Number: 96497 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPF12LHM3, VS-65APF12LHM3 Vishay Semiconductors 12 000 1000 100 TJ = 25 °C TJ = 150 °C 10 10 000 8000 IFM = 30 A 6000 IFM = 10 A 4000 IFM = 5 A 2000 IFM = 1 A 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 Instantaneous Forward Voltage (V) 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 25 000 600 TJ = 25 °C IFM = 60 A 400 IFM = 30 A 300 IFM = 10 A 200 IFM = 5 A 100 Qrr - Typical Reverse Recovery Charge (µC) TJ = 150 °C 500 trr - Typical Reverse Recovery Time (ns) IFM = 60 A TJ = 25 °C Qrr - Typical Reverse Recovery Charge (µC) Instantaneous Forward Current (A) www.vishay.com IFM = 60 A 20 000 15 000 IFM = 30 A 10 000 IFM = 10 A 5000 IFM = 5 A IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 0 200 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 45 1200 Irr - Typical Reverse Recovery Current (A) trr - Typical Reverse Recovery Time (ns) 1000 800 IFM = 60 A 600 IFM = 30 A 400 IFM = 10 A 200 IFM = 5 A IFM = 1 A TJ = 25 °C 40 TJ = 150 °C IFM = 60 A 35 IFM = 30 A 30 25 IFM = 10 A 20 15 IFM = 5 A 10 IFM = 1 A 5 0 0 0 0 40 80 120 160 200 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Revision: 22-Feb-18 Document Number: 96497 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPF12LHM3, VS-65APF12LHM3 www.vishay.com Vishay Semiconductors 60 IFM = 60 A TJ = 150 °C Irr - Typical Reverse Recovery Current (A) 50 IFM = 30 A 40 IFM = 10 A 30 20 IFM = 5 A 10 IFM = 1 A 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Transient Thermal Impedance ZthJC (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 0.5 0.1 Steady state value (DC operation) 0.33 0.25 0.17 0.08 0.01 0.001 0.0001 Single pulse 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 22-Feb-18 Document Number: 96497 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPF12LHM3, VS-65APF12LHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 65 E P F 12 L H M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (65 = 65 A) 3 - Circuit configuration: E = single, 2 pins A = single, 3 pins 4 - Package: P = TO-247AD 5 - Type of silicon: F = fast recovery rectifier 6 - Voltage code x 100 = VRRM 7 - L = long leads 8 - H = AEC-Q101 qualified 9 - 12 = 1200 V Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-65EPF12LHM3 25 500 Antistatic plastic tubes VS-65APF12LHM3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 Revision: 22-Feb-18 Document Number: 96497 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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