VS-65EPS12L-M3

VS-65EPS..L-M3, VS-65APS..L-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 65 A FEATURES • Very low forward voltage drop • Glass passivated pellet chip junction • Designed and qualified according to JEDEC® - JESD 47 • Flexible solution for reliable AC power rectification • High surge, low VF rugged blocking diode for DC charging stations • AEC-Q101 qualified P/N available (VS-65EPS12LHM3, VS-65APS12LHM3) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 1 2 3 3 TO-247AD 3L TO-247AD 2L Base cathode 2 1 Cathode Base cathode 2 3 Anode 1 3 Anode Anode APPLICATIONS • On-board and off-board EV / HEV battery chargers • Renewable energy inverters • Input rectification for single and three phase bridge configurations • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines VS-65APS..L-M3 VS-65EPS..L-M3 PRIMARY CHARACTERISTICS IF(AV) 65 A VR 800 V, 1200 V VF at IF 1.12 V IFSM 1000 A TJ max. 150 °C Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 65 A VRRM 800, 1200 V IFSM 1000 A VF 30 A, TJ = 25 °C TJ 1.0 V -40 to +150 °C VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-65EPS08L-M3 800 900 VS-65APS08L-M3 800 900 PART NUMBER VS-65EPS12L-M3 1200 1300 VS-65APS12L-M3 1200 1300 IRRM AT 150 °C mA 1.3 1.3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 121 °C, 180° conduction half sine wave VALUES 10 ms sine pulse, rated VRRM applied 840 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated VRRM applied 3530 10 ms sine pulse, no voltage reapplied 5000 t = 0.1 ms to 10 ms, no voltage reapplied UNITS 65 50 000 A A2s A2s Revision: 06-Jul-2018 Document Number: 95998 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPS..L-M3, VS-65APS..L-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 65 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V 3.98 m 0.74 V 0.1 VR = rated VRRM TJ = 150 °C UNITS 1.12 mA 1.3 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased 0.25 g oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Ø Conduction angle 130 120 110 120° 60° 90° 180° 90 0 10 20 30 40 50 60 70 Case style TO-247AD 2L 65EPS08L Case style TO-247AD 3L 65APS08L Case style TO-247AD 2L 65EPS12L Case style TO-247AD 3L 65APS12L Max. Allowable Case Temperature (°C) Max. Allowable Case Temperature (°C) 140 30° °C/W 40 6 RthJC (DC) = 0.25 °C/W 100 °C 0.25 0.21 Marking device 150 UNITS DC operation Approximate weight Mounting torque VALUES -40 to +150 150 RthJC (DC) = 0.25 °C/W 140 Ø Conduction angle 130 120 110 100 90 30° DC 120° 60° 180° 90° 80 0 20 40 60 80 100 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 120 Revision: 06-Jul-2018 Document Number: 95998 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPS..L-M3, VS-65APS..L-M3 Peak Half Sine Wave Forward Current (A) Vishay Semiconductors 100 180° 120° 90° 60° 30° 90 80 70 60 50 RMS limit 40 30 Ø Conduction angle 20 10 TJ = 150 °C 0 0 10 20 30 40 50 60 70 900 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 800 700 600 500 400 300 200 1 10 100 Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Average On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulse (N) 140 180° 120° 90° 60° 30° 120 100 DC 80 RMS limit 60 Ø 40 Conduction angle 20 TJ = 150 °C 0 0 20 40 60 80 100 120 1100 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 1000 900 800 700 600 500 400 300 200 100 0.01 0.1 1.0 10 Average On-state Current (A) Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Max. Average On-state Power Loss (W) Max. Average On-State Power Loss (W) www.vishay.com 1000 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 06-Jul-2018 Document Number: 95998 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPS..L-M3, VS-65APS..L-M3 ZthJC - Transient Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 1 0.25 0.33 0.17 0.5 Steady state value (DC operation) 0.1 0.08 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 65 E P S 12 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (65 = 65 A) 3 - Circuit configuration: E = single, 2 pins A = single, 3 pins 4 - 5 - Package: P = TO-247AD Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - L = long leads 8 - Environmental digit: 08 = 800 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-65EPS08L-M3 25 500 Antistatic plastic tubes VS-65APS08L-M3 25 500 Antistatic plastic tubes VS-65EPS12L-M3 25 500 Antistatic plastic tubes VS-65APS12L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 Revision: 06-Jul-2018 Document Number: 95998 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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