VS-65EPS..L-M3, VS-65APS..L-M3
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Vishay Semiconductors
High Voltage Input Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC® - JESD 47
• Flexible solution for reliable AC power
rectification
• High surge, low VF rugged blocking diode for DC charging
stations
• AEC-Q101 qualified P/N available (VS-65EPS12LHM3,
VS-65APS12LHM3)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
1
2
3
3
TO-247AD 3L
TO-247AD 2L
Base cathode
2
1
Cathode
Base cathode
2
3
Anode
1
3
Anode
Anode
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
• Input rectification for single and three phase bridge
configurations
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
VS-65APS..L-M3
VS-65EPS..L-M3
PRIMARY CHARACTERISTICS
IF(AV)
65 A
VR
800 V, 1200 V
VF at IF
1.12 V
IFSM
1000 A
TJ max.
150 °C
Package
TO-247AD 2L, TO-247AD 3L
Circuit configuration
Single
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
65
A
VRRM
800, 1200
V
IFSM
1000
A
VF
30 A, TJ = 25 °C
TJ
1.0
V
-40 to +150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-65EPS08L-M3
800
900
VS-65APS08L-M3
800
900
PART NUMBER
VS-65EPS12L-M3
1200
1300
VS-65APS12L-M3
1200
1300
IRRM
AT 150 °C
mA
1.3
1.3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 121 °C, 180° conduction half sine wave
VALUES
10 ms sine pulse, rated VRRM applied
840
10 ms sine pulse, no voltage reapplied
1000
10 ms sine pulse, rated VRRM applied
3530
10 ms sine pulse, no voltage reapplied
5000
t = 0.1 ms to 10 ms, no voltage reapplied
UNITS
65
50 000
A
A2s
A2s
Revision: 06-Jul-2018
Document Number: 95998
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPS..L-M3, VS-65APS..L-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
65 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
V
3.98
m
0.74
V
0.1
VR = rated VRRM
TJ = 150 °C
UNITS
1.12
mA
1.3
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
Maximum thermal resistance, junction to ambient
RthJA
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, and greased
0.25
g
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Ø
Conduction angle
130
120
110
120°
60°
90°
180°
90
0
10
20
30
40
50
60
70
Case style TO-247AD 2L
65EPS08L
Case style TO-247AD 3L
65APS08L
Case style TO-247AD 2L
65EPS12L
Case style TO-247AD 3L
65APS12L
Max. Allowable Case Temperature (°C)
Max. Allowable Case Temperature (°C)
140
30°
°C/W
40
6
RthJC (DC) = 0.25 °C/W
100
°C
0.25
0.21
Marking device
150
UNITS
DC operation
Approximate weight
Mounting torque
VALUES
-40 to +150
150
RthJC (DC) = 0.25 °C/W
140
Ø
Conduction angle
130
120
110
100
90
30°
DC
120°
60°
180°
90°
80
0
20
40
60
80
100
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
120
Revision: 06-Jul-2018
Document Number: 95998
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPS..L-M3, VS-65APS..L-M3
Peak Half Sine Wave Forward Current (A)
Vishay Semiconductors
100
180°
120°
90°
60°
30°
90
80
70
60
50
RMS limit
40
30
Ø
Conduction angle
20
10
TJ = 150 °C
0
0
10
20
30
40
50
60
70
900
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
800
700
600
500
400
300
200
1
10
100
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Average On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulse (N)
140
180°
120°
90°
60°
30°
120
100
DC
80
RMS limit
60
Ø
40
Conduction angle
20
TJ = 150 °C
0
0
20
40
60
80
100
120
1100
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
1000
900
800
700
600
500
400
300
200
100
0.01
0.1
1.0
10
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
Max. Average On-state Power Loss (W)
Max. Average On-State Power Loss (W)
www.vishay.com
1000
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 06-Jul-2018
Document Number: 95998
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPS..L-M3, VS-65APS..L-M3
ZthJC - Transient Thermal Impedance
(°C/W)
www.vishay.com
Vishay Semiconductors
1
0.25
0.33
0.17
0.5
Steady state value
(DC operation)
0.1
0.08
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
65
E
P
S
12
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (65 = 65 A)
3
-
Circuit configuration:
E = single, 2 pins
A = single, 3 pins
4
-
5
-
Package:
P = TO-247AD
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
L = long leads
8
-
Environmental digit:
08 = 800 V
12 = 1200 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-65EPS08L-M3
25
500
Antistatic plastic tubes
VS-65APS08L-M3
25
500
Antistatic plastic tubes
VS-65EPS12L-M3
25
500
Antistatic plastic tubes
VS-65APS12L-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
www.vishay.com/doc?95536
TO-247AD 3L
www.vishay.com/doc?95626
TO-247AD 2L
www.vishay.com/doc?95648
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 06-Jul-2018
Document Number: 95998
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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