VS-65EPS16L-M3

VS-65EPS16L-M3, VS-65APS16L-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 65 A FEATURES 2 1 1 2 3 3 TO-247AD 2L TO-247AD 3L Base cathode 2 Base cathode 2 • Very low forward voltage drop • Glass passivated pellet chip junction • Designed and qualified according to JEDEC® - JESD 47 • Flexible solution for reliable AC power rectification • High surge, low VF rugged blocking diode for DC charging stations • AEC-Q101 qualified P/N available (VS-65EPS16LHM3, VS-65APS16LHM3) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 Cathode 1 3 Anode Anode 3 Anode VS-65APS16L-M3 VS-65EPS16L-M3 PRIMARY CHARACTERISTICS IF(AV) 65 A VR 1600 V VF at IF 1.17 V IFSM 950 A APPLICATIONS • On-board and off-board EV / HEV battery chargers • Renewable energy inverters • Input rectification for single and three phase bridge configurations • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines DESCRIPTION TJ max. 150 °C Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 65 A VRRM 1600 V IFSM 950 A VF 30 A, TJ = 25 °C TJ 1.0 V -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRSM, MAXIMUM VRRM, MAXIMUM NON-REPETITIVE PEAK REVERSE PEAK REVERSE VOLTAGE VOLTAGE V V VS-65EPS16L-M3 1600 1700 VS-65APS16L-M3 1600 1700 IRRM AT 150 °C mA 1.3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 120 °C, 180° conduction half sine wave 65 10 ms sine pulse, rated VRRM applied 800 10 ms sine pulse, no voltage reapplied 950 10 ms sine pulse, rated VRRM applied 3190 10 ms sine pulse, no voltage reapplied 4510 t = 0.1 ms to 10 ms, no voltage reapplied 45 100 UNITS A A2s A2√s Revision: 28-Jul-2020 Document Number: 93393 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPS16L-M3, VS-65APS16L-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 65 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C UNITS 1.17 V 3.98 mΩ 0.74 V 0.1 VR = rated VRRM TJ = 150 °C VALUES mA 1.3 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Mounting surface, smooth, and greased g minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 130 120 110 120° 30° 60° 90° 30 40 50 180° Ø Conduction angle 90 60 Average On-State Current (A) Fig. 1 - Current Rating Characteristics 70 Case style TO-247AD 2L 65EPS16L Case style TO-247AD 3L 65APS16L Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 140 20 0.25 oz. RthJC (DC) = 0.25 °C/W 10 °C/W 40 6 150 0 °C 0.21 Marking device 100 UNITS 0.25 Approximate weight Mounting torque VALUES -40 to +150 150 RthJC (DC) = 0.25 °C/W Ø 140 Conduction Angle 130 120 110 120° 180° 30° 100 DC° 60° 90° 90 0 20 40 60 80 100 120 Average On-State Current (A) Fig. 2 - Current Rating Characteristics Revision: 28-Jul-2020 Document Number: 93393 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPS16L-M3, VS-65APS16L-M3 Vishay Semiconductors 100 180° 120° 90° 60° 30° 80 60 RMS limit 40 Ø Conduction Angle 20 TJ = 150 °C 0 0 10 20 30 40 50 60 900 Peak Half Sine Wave Forward Current (A) Max. Average On-State Power Loss (W) www.vishay.com 70 Average On - State Current (A) 700 600 500 400 300 1 Peak Half Sine Wave Forward Current (A) DC RMS limit 60 Ø 40 Conduction Angle 20 TJ = 150 °C 0 0 20 40 60 80 100 100 1000 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated Vrrm reapplied 900 800 700 600 500 400 300 200 VS-60EPS.. Series 100 0.01 0.1 1 10 Average On - State Current (A) Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current IF - Instantaneous Forward Current (A) Max. Average On-State Power Loss (W) 180° 120° 90° 60° 30° 80 10 Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current 140 100 VS-60EPS.. Series 200 Fig. 3 - Forward Power Loss Characteristics 120 At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 800 1000 TJ = 150 °C 100 10 TJ = 25 °C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VF - Forward Voltage Drop (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 28-Jul-2020 Document Number: 93393 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65EPS16L-M3, VS-65APS16L-M3 ZthJC - Transient Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 1 0.25 0.33 0.17 0.5 Steady state value (DC operation) 0.1 0.08 0.01 Single pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 65 E P S 16 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (65 = 65 A) 3 - Circuit configuration: E = single, 2 pins A = single, 3 pins 4 - 5 - Package: P = TO-247AD Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - L = long leads 8 - 16 = 1600 V Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-65EPS16L-M3 25 500 Antistatic plastic tubes VS-65APS16L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 www.vishay.com/doc?96780 Revision: 28-Jul-2020 Document Number: 93393 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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