VS-6ESH02-M3/86A

VS-6ESH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation K Anode 1 Cathode Anode 2 1 2 • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMPC (TO-277A) • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. 6A VR 200 V VF at IF 0.74 V The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. trr (typ.) 28 ns TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single These devices are intended for use in snubber, boost, lighting, as high frequency rectifiers and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TSp = 160 °C Non-repetitive peak surge current IFSM TJ = 25 °C Operating junction and storage temperatures VALUES UNITS 200 V 6 A 150 TJ, TStg -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 6 A - 0.87 0.94 IF = 6 A, TJ = 125 °C - 0.74 0.8 IR = 100 μA VR = VR rated - - 2 TJ = 125 °C, VR = VR rated - 3 15 VR = 200 V - 33 - UNITS V μA pF Revision: 06-Jul-17 Document Number: 94982 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6ESH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 28 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 22 - - 33 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr MAX. TJ = 25 °C TJ = 125 °C IF = 6 A dIF/dt = 200 A/μs VR = 160 V - 2.4 - - 5.0 - UNITS ns A TJ = 25 °C - 27 - TJ = 125 °C - 80 - MIN. TYP. MAX. UNITS °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -55 - 175 Thermal resistance, junction to solder pad RthJ-Sp - 2.2 3 RthJA - 85 - °C/W Thermal resistance, junction to ambient 0.1 Approximate weight 0.0035 Marking device Case style SMPC (TO-277A) oz. NEH2 100 100 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) g 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 150 °C 10 125 °C 1 25 °C 0.1 0.01 0.001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 06-Jul-17 Document Number: 94982 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6ESH02-M3 www.vishay.com Vishay Semiconductors 7 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 1000 100 10 5 4 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 3 2 1 0 0 50 100 150 0 200 2 4 6 8 10 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 45 40 175 35 30 170 trr (ns) Allowable Case Temperature (°C) 6 DC 165 125 °C 25 20 25 °C 15 Square wave (D = 0.50) 80 % rated VR applied 10 160 5 See note (1) 155 IF = 6 A 0 0 1 2 3 4 5 6 7 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 140 120 125 °C Qrr (nC) 100 80 60 25 °C 40 20 IF = 6 A 0 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 06-Jul-17 Document Number: 94982 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6ESH02-M3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 10 Typical, junction to case 1 Single pulse 0.1 Steady state value (DC) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 8 - Transient Thermal Impedance, Junction to Case ZthJA - Thermal Impedance (°C/W) 100 Typical, junction to ambient 10 1 Single pulse 0.1 Steady state value (DC) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 9 - Transient Thermal Impedance, Junction to Ambient (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 06-Jul-17 Document Number: 94982 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6ESH02-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 E S H 02 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (6 = 6 A) 3 - Circuit configuration: E = single diode 4 - S = SMPC package 5 - Process type, H = hyperfast recovery 6 - Voltage code (02 = 200 V) 7 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-6ESH02-M3/86A 1500 1500 7" diameter plastic tape and reel VS-6ESH02-M3/87A 6500 6500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95570 Part marking information www.vishay.com/doc?95565 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96111 Revision: 06-Jul-17 Document Number: 94982 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-277A (SMPC) DIMENSIONS in inches (millimeters) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 03-Sep-14 Document Number: 95570 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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